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Part: MRF21125R3
Category:
Description: 2170 Mhz, 125 W, 28 V Lateral N–Channel RF Power MOSFET
Company: Motorola Semiconductor Products
Datasheet: Download MRF21125R3 datasheet File size : 448 kB
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRF21125/D
The RF Sub - Micron MOSFET Line
RF Power Field Effect Transistors
Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. · Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 1600 mA, f1 = 2.1125 GHz, f2 = 2.1225 GHz, Channel bandwidth = 3.84 MHz, adjacent channels at ± 5 MHz , ACPR and IM3 measured in 3.84 MHz bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF. Output Power -- 20 Watts Efficiency -- 18% Gain -- 13 dB IM3 -- - 43 dBc ACPR -- - 45 dBc · 100% Tested under 2 - carrier W - CDMA · Internally Matched, Controlled Q, for Ease of Use · High Gain, High Efficiency and High Linearity · Integrated ESD Protection · Designed for Maximum Gain and Insertion Phase Flatness · Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 125 Watts (CW) Output Power · Excellent Thermal Stability · Characterized with Series Equivalent Large - Signal Impedance Parameters · In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
N - Channel Enhancement - Mode Lateral MOSFETs
MRF21125R3 MRF21125SR3
2170 MHz, 125 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465B - 03, STYLE 1 NI - 880 MRF21125R3
CASE 465C - 02, STYLE 1 NI - 880S MRF21125SR3
MAXIMUM RATINGS
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 - 0.5, +15 330 1.89 - 65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (1) 0.53 Unit °C/W
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 7
MOTO Inc. 2004 Motorola,ROLA RF DEVICE DATA
For More Information On This Product, Go to: www.freescale.com
MRF21125R3 MRF21125SR3 1
Freescale Semiconductor, Inc.
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) V(BR)DSS IGSS IDSS 65 -- -- -- -- -- -- 1 10 Vdc µAdc µAdc Symbol Min Typ Max Unit
Freescale Semiconductor, Inc...
ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) Gate Threshold Voltage (VDS = 10 V, ID = 300 µA) Gate Quiescent Voltage (VDS = 28 V, ID = 1300 mA) Drain - Source On - Voltage (VGS = 10 V, ID = 1 A) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss -- 5.4 -- pF gfs VGS(th) VGS(Q) VDS(on) -- 2 2.5 -- 10.8 -- 3.9 0.12 -- 4 4.5 -- S Vdc Vdc Vdc
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth, IM3 measured in 3.84 MHz Bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF. Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured at f1 - 10 MHz and f2 +10 MHz referenced to carrier channel power.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured at f1 - 5 MHz and f2 +5 MHz referenced to carrier channel power.) Input Return Loss (VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Output Mismatch Stress (VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f = 2170 MHz, VSWR = 5:1, All Phase Angles at Frequency of Test) (1) Part is internally matched both on input and output. (continued) Gps 12 13 -- dB
17
18
--
%
IM3
--
- 43
- 40
dBc
ACPR
--
- 45
- 40
dBc
IRL
--
- 12
- 9.0
dB
No Degradation In Output Power Before and After Test
MRF21125R3 MRF21125SR3 2
For More Information On This Product, Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS -- continued (TC = 25°C unless otherwise noted)
Characteristic TYPICAL TWO - TONE PERFORMANCE (In Motorola Test Fixture) Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Intermodulation Distortion (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) TYPICAL CW PERFORMANCE Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f1 = 2170.0 MHz) Gps -- -- 11.5 46 -- -- dB % Gps -- 12 -- dB Symbol Min Typ Max Unit
--
34
--
%
IMD
--
- 30
--
dBc
Freescale Semiconductor, Inc...
Drain Efficiency (VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f = 2170.0 MHz)
MOTOROLA RF DEVICE DATA
For More Information On This Product, Go to: www.freescale.com
MRF21125R3 MRF21125SR3 3
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