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Part: MRF21125S
Category:
RF & Microwaves
-> Transistors
-> FETs
-> MOSFETs
-> Power
Description: MRF21125, MRF21125S, MRF21125SR3 2170 Mhz, 125 W, 28 V Lateral N-channel RF Power MOSFETs
Company: Motorola Semiconductor Products
Datasheet: Download MRF21125S datasheet File size : 448 kB
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Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF21125/D
The RF SubMicron MOSFET Line
RF Power Field Effect Transistors
NChannel EnhancementMode Lateral MOSFETs
Designed for WCDMA base station applications with frequencies from 2110 t o 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N P C S / c e l l u l a r r a d i o a n d W L L applications. · Typical 2carrier WCDMA Performance for VDD = 28 Volts, IDQ = 1600 mA, f1 = 2.1125 GHz, f2 = 2.1225 GHz, Channel bandwidth = 3.84 MHz, adjacent channels at ħ 5 MHz , ACPR and IM3 measured in 3.84 MHz bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF. Output Power -- 20 Watts Efficiency -- 18% Gain -- 13 dB IM3 -- 43 dBc ACPR -- 45 dBc · 100% Tested under 2carrier WCDMA · Internally Matched, Controlled Q, for Ease of Use · High Gain, High Efficiency and High Linearity · Integrated ESD Protection · Designed for Maximum Gain and Insertion Phase Flatness · Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 125 Watts (CW) Output Power · Excellent Thermal Stability · Characterized with Series Equivalent LargeSignal Impedance Parameters · Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF21125 MRF21125S MRF21125SR3
2170 MHz, 125 W, 28 V LATERAL NCHANNEL RF POWER MOSFETs
CASE 465B03, STYLE 1 NI880 MRF21125
CASE 465C02, STYLE 1 NI880S MRF21125S
MAXIMUM RATINGS
Rating DrainSource Voltage GateSource Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 0.5, +15 330 1.89 65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol R J C Max 0.53 Unit °C/W
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 6
MOTO Inc. 2003 Motorola,ROLA RF DEVICE DATA
MRF21125 MRF21125S MRF21125SR3 1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DrainSource Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) GateSource Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) Gate Threshold Voltage (VDS = 10 V, ID = 300 µA) Gate Quiescent Voltage (VDS = 28 V, ID = 1300 mA) DrainSource OnVoltage (VGS = 10 V, ID = 1 A) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss -- 5.4 -- pF gfs VGS(th) VGS(Q) VDS(on) -- 2 2.5 -- 10.8 -- 3.9 0.12 -- 4 4.5 -- S Vdc Vdc Vdc V(BR)DSS IGSS IDSS 65 -- -- -- -- -- -- 1 10 Vdc µAdc µAdc Symbol Min Typ Max Unit
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2carrier WCDMA, 3.84 MHz Channel Bandwidth, IM3 measured in 3.84 MHz Bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF. CommonSource Amplifier Power Gain (VDD = 28 Vdc, Pout = 20 W Avg, 2carrier WCDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 20 W Avg, 2carrier WCDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 20 W Avg, 2carrier WCDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured at f1 10 MHz and f2 +10 MHz referenced to carrier channel power.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 20 W Avg, 2carrier WCDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured at f1 5 MHz and f2 +5 MHz referenced to carrier channel power.) Input Return Loss (VDD = 28 Vdc, Pout = 20 W Avg, 2carrier WCDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Output Mismatch Stress (VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f = 2170 MHz, VSWR = 5:1, All Phase Angles at Frequency of Test) (1) Part is internally matched both on input and output. Gps 12 13 -- dB
17
18
--
%
IM3
--
43
40
dBc
ACPR
--
45
40
dBc
IRL
--
12
9.0
dB
No Degradation In Output Power Before and After Test
MRF21125 MRF21125S MRF21125SR3 2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS -- continued (TC = 25°C unless otherwise noted)
Characteristic TYPICAL TWOTONE PERFORMANCE (In Motorola Test Fixture) CommonSource Amplifier Power Gain (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Intermodulation Distortion (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) TYPICAL CW PERFORMANCE CommonSource Amplifier Power Gain (VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f1 = 2170.0 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f = 2170.0 MHz) Gps -- -- 11.5 46 -- -- dB % Gps -- 12 -- dB Symbol Min Typ Max Unit
--
34
--
%
IMD
--
30
--
dBc
MOTOROLA RF DEVICE DATA
MRF21125 MRF21125S MRF21125SR3 3
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