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Part: MRF21180S
Category:
RF & Microwaves
-> Transistors
-> FETs
-> MOSFETs
-> Power
Description: MRF21180, MRF21180S 2170 Mhz, 170 W, 28 V Lateral N-channel RF Power MOSFETs
Company: Motorola Semiconductor Products
Datasheet: Download MRF21180S datasheet File size : 448 kB
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Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF21180/D
The RF SubMicron MOSFET Line
RF Power Field Effect Transistors
NChannel EnhancementMode Lateral MOSFETs
Designed for WCDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCNPCS/cellular radio and WLL applications. · Typical 2carrier WCDMA Performance for VDD = 28 Volts, IDQ = 2 x 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 5 MHz and f2 + 5 MHz. Distortion Products Measured over a 3.84 MHz BW @ f1 10 MHz and f2 + 10 MHz, Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Output Power -- 38 Watts (Avg.) Power Gain -- 12.1 dB Efficiency -- 22% IM3 -- 37.5 dBc ACPR -- 41 dBc · Internally Input and Output Matched, for Ease of Use · High Gain, High Efficiency, and High Linearity · Integrated ESD Protection · Designed for Maximum Gain and Insertion Phase Flatness · Capable of Handling 5:1 VSWR, @ 28 Vdc, 2110 MHz, 170 Watts (CW) Output Power · Excellent Thermal Stability · Characterized with Series Equivalent LargeSignal Impedance Parameters
MRF21180 MRF21180S
2170 MHz, 170 W, 28 V LATERAL NCHANNEL RF POWER MOSFETs
CASE 375D04, STYLE 1 NI1230 MRF21180
CASE 375E03, STYLE 1 NI1230S MRF21180S
MAXIMUM RATINGS
Rating DrainSource Voltage GateSource Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 0.5, +15 380 2.17 65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Class 1 (Minimum) M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol R J C Max 0.46 Unit °C/W
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 3
MOTO Inc. 2003 Motorola,ROLA RF DEVICE DATA
MRF21180 MRF21180S 1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS (1) DrainSource Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) GateSource Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 850 mAdc) DrainSource OnVoltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss -- 3.6 -- pF VGS(th) VGS(Q) VDS(on) gfs 2 3 -- -- -- 3.9 0.18 6 4 5 0.22 -- Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 10 1 Vdc µAdc µAdc Symbol Min Typ Max Unit
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) 2Carrier WCDMA, 3.84 MHz Channel Bandwidth Carriers. Each carrier has Peak/Avg. ratio = 8.3 dB @ 0.01% Probability on CCDF. CommonSource Amplifier Power Gain (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW @ f1 10 MHz and f2 +10 MHz) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz BW @ f1 5 MHz and f2 +5 MHz.) Input Return Loss (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Output Mismatch Stress (VDD = 28 Vdc, Pout = 170 W CW, IDQ = 2 x 850 mA, f = 2170 MHz VSWR = 5:1, All Phase Angles at Frequency of Tests) Gps 11 12.1 -- dB
19
22
--
%
IM3
--
37.5
35
dBc
ACPR
--
41
39
dBc
IRL
--
12
9
dB
No Degradation In Output Power Before and After Test
(1) Each side of device measured separately. Part is internally matched both on input and output. (2) Measurements made with device in pushpull configuration. (continued)
MRF21180 MRF21180S 2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS -- continued (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) (continued) TwoTone CommonSource Amplifier Power Gain (VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) TwoTone Drain Efficiency (VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) TwoTone Intermodulation Distortion (VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) TwoTone Input Return Loss (VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Pout, 1 dB Compression Point (VDD = 28 Vdc, IDQ = 2 x 850 mA, f = 2170 MHz) (2) Measurements made with device in pushpull configuration. Gps -- 12 -- dB
--
33
--
%
IMD
--
30
--
dBc
IRL
--
12
--
dB
P1dB
--
180
--
W
MOTOROLA RF DEVICE DATA
MRF21180 MRF21180S 3
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