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Part: MRF247
Category:
Discrete
-> Transistors
-> Bipolar
-> Audio Amplifier Application
-> NPN
Description: RF Power Transistor NPN Silicon
Company: Motorola Semiconductor Products
Datasheet: Download MRF247 datasheet File size : 448 kB
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Datasheet text preview:
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF247/D
NPN Silicon RF Power Transistor
The MRF247 is designed for 12.5 Volt VHF largesignal amplifier applications in industrial and commercial FM equipment operating to 175 MHz. · Specified 12.5 Volt, 175 MHz Characteristics -- Output Power = 75 Watts Power Gain = 7.0 dB Min Efficiency = 55% Min · Characterized With Series Equivalent LargeSignal Impedance Parameters · Internal Matching Network Optimized for Minimum Gain Frequency Slope Response Over the Range 136 to 175 MHz · Load Mismatch Capability at Rated Pout and Supply Voltage
MRF247
75 W, 175 MHz CONTROLLED Q RF POWER TRANSISTOR NPN SILICON
CASE 31601, STYLE 1
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current -- Peak Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 18 36 4.0 20 250 1.43 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case (2) Symbol RJC Max 0.7 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 100 mAdc, IB = 0) CollectorEmitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) EmitterBase Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)CEO V(BR)CES V(BR)EBO 18 36 4.0 -- -- -- -- -- -- Vdc Vdc Vdc
(1) This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. (2) Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 1
©MOTOROLA RF DEVICE DATA Motorola, Inc. 1997
MRF247 1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 10 75 150 --
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 15 Vdc, IE = 0, f = 1.0 MHz) Cob -- 235 300 pF
FUNCTIONAL TESTS
CommonEmitter Amplifier Power Gain (VCC = 12.5 Vdc, Pout = 75 Watts, f = 175 MHz) Collector Efficiency (VCC = 12.5 Vdc, Pout = 75 Watts, f = 175 MHz) Load Mismatch (VCC = 12.5 Vdc, Pout = 75 Watts, f = 175 MHz, VSWR = 30:1 All Phase Angles) L3 NC C4 + C6 C13 GPE No Degradation in Output Power 7.0 55 8.5 60 -- -- dB %
L6 + C16 + 12.5 V
C3
L2
C8 D.U.T.
C10
L4
C12
C15
C1 C2
L1 C5 C7
L5 C9 C11 C14
C17
C1, C17 C2, C14 C3 C4, C16 C5 C6, C13 C7, C8 C9, C10
330 pF ATC 100 mil Ceramic Capacitor Johansen 120 pF Trimmer Capacitor 40 pF Standard Unelco Clamped Mica Capacitor Sprague 10 µF 35 Vdc Electrolytic Capacitor 80 pF Standard Unelco Clamped Mica Capacitor 91 pF MiniUnelco Clamped Mica Capacitor 240 pF ATC 100 mil Ceramic Capacitor 180 pF ATC 100 mil Ceramic Capacitor
C11 C12 C15 L1 L2 , L4 L3, L6 L5
150 pF Standard Unelco Clamped Mica Capacitor 33 pF MiniUnelco Clamped Mica Capacitor 27 pF MiniUnelco Clamped Mica Capacitor 2 Turns, 16 AWG Enameled, IDIA 0.13 4 Turns, 18 AWG Enameled, IDIA 0.18 VK 200 with Ferrite Bead 2 Turns, 16 AWG Enameled, IDIA 0.15
Figure 1. Output Power versus Input Power
16 Pout , OUTPUT POWER (WATTS) 100 150 MHz GPE , POWER GAIN (dB) VCC = 12.5 V 40 4 6 8 10 12 14 16 18 20 22 24 2 0 130 140 150 160 14 12 10 8 6 4 Pout = 75 W VCC = 12.5 V 170 180
80 175 MHz 60 f = 136 MHz
Pin, INPUT POWER (WATTS)
f, FREQUENCY (MHz)
Figure 2. Output Power versus Input Power MRF247 2
Figure 3. Power Gain versus Frequency MOTOROLA RF DEVICE DATA
120 Pout , OUTPUT POWER (WATTS) Pin = 12 W 100 10 W 80 8W Pout , OUTPUT POWER (WATTS)
120
Pin = 12 W 10 W
100
8W
80
60
60
40 9 10 11 12 13 14
f = 136 MHz 15 16 17
40 9 10 11 12 13 14
f = 150 MHz 15 16 17
VCC, SUPPLY VOLTAGE (VOLTS)
VCC, SUPPLY VOLTAGE (VOLTS)
Figure 4. Output Power versus Supply Voltage
Figure 5. Output Power versus Supply Voltage
120 Pout , OUTPUT POWER (WATTS)
Pin = 12 W 10 W 8W
0 +J1.0 +J2.0
100
80 150 60
1.0
Zin
+J3.0
f = 136 MHz 175 150 ZOL* 175
40 9 10 11 12 13 14
f = 175 MHz 15 16 17
f = 136 MHz
VCC, SUPPLY VOLTAGE (VOLTS)
2.0
Figure 6. Output Power versus Supply Voltage
3.0
VCC = 12.5 V, Pout = 75 W f MHz 136 150 175 Zin Ohms 0.57 + j1.07 0.55 + j1.13 0.57 + j1.92 ZOL* Ohms 1.13 + j0.65 1.13 + j0.73 0.87 + j1.13
4.0
5.0
ZOL* = Conjugate of the optimum load ZOL* = impedance into which the device ZOL* = operates at a given output power, ZOL* = voltage and frequency.
6.0
Figure 7. Series Equivalent Impedances
MOTOROLA RF DEVICE DATA
MRF247 3
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