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Part: MRF255
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> JFETs (Junction-FETs)
-> N-Channel
Description: N-channel Broadband RF Power Fet
Company: Motorola Semiconductor Products
Datasheet: Download MRF255 datasheet File size : 448 kB
Request For quote: Find where to buy MRF255
Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF255/D
The RF MOSFET Line
RF Power Field-Effect Transistor
NChannel EnhancementMode
Designed for broadband commercial and industrial applications at frequencies to 54 MHz. The high gain, broadband performance and linear characterization of this device makes it ideal for largesignal, common source amplifier applications in 12.5 Volt mobile and base station equipment. · Guaranteed Performance at 54 MHz, 12.5 Volts Output Power -- 55 Watts PEP Power Gain -- 13 dB Min TwoTone IMD -- 25 dBc Max Efficiency -- 40% Min, TwoTone Test · Characterized with Series Equivalent LargeSignal Impedance Parameters · Excellent Thermal Stability · All Gold Metal for Ultra Reliability · Aluminum Nitride Package Electrical Insulator · Circuit Board Photomaster Available by Ordering Document MRF255PHT/D from Motorola Literature Distribution.
MRF255
55 W, 12.5 Vdc, 54 MHz NCHANNEL BROADBAND RF POWER FET
CASE 21111, STYLE 2
MAXIMUM RATINGS
Rating DrainSource Voltage DrainGate Voltage (RGS = 1.0 M) GateSource Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 36 36 ± 20 22 175 1.0 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 1.0 Unit °C/W
Handling and Packaging -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
MOTOR Inc. 1995 © Motorola, OLA RF DEVICE DATA
MRF255 1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DrainSource Breakdown Voltage (VGS = 0, ID = 20 mAdc) Zero Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0) GateSource Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 25 mAdc) DrainSource OnVoltage (VGS = 10 Vdc, ID = 4.0 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 3.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture.) Common Source Amplifier Power Gain, f1 = 54, f2 = 54.001 MHz (VDD = 12.5 Vdc, Pout = 55 W (PEP), IDQ = 400 mA) Intermodulation Distortion (1), f1 = 54.000 MHz, f2 = 54.001 MHz (VDD = 12.5 Vdc, Pout = 55 W (PEP), IDQ = 400 mA) Drain Efficiency, f1 = 54; f2 = 54.001 MHz (VDD = 12.5 Vdc, Pout = 55 W (PEP), IDQ = 400 mA) Drain Efficiency, f = 54 MHz (VDD = 12.5 Vdc, Pout = 55 W CW, IDQ = 400 mA) Output Mismatch Stress, f1 = 54; f2 = 54.001 MHz (VDD = 12.5 Vdc, Pout = 55 W (PEP), IDQ = 400 mA, VSWR = 20:1, at all phase angles) Gps IMD(d3,d5) 13 -- 40 -- 16 30 45 60 -- 25 -- -- dB dBc % % Ciss Coss Crss -- -- -- 140 285 38 -- -- 44 pF pF pF VGS(th) VDS(on) gfs 1.25 -- 4.2 2.3 -- -- 3.5 0.4 -- Vdc Vdc S V(BR)DSS IDSS IGSS 36 -- -- -- -- -- -- 5.0 5.0 Vdc mAdc µAdc Symbol Min Typ Max Unit
No Degradation in Output Power Before and After Test
(1) To MILSTD1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
MRF255 2
MOTOROLA RF DEVICE DATA
RFC1 VGG + + C5 C6 L5 C4 L1 C2 C3 L2 C9 R1 C10 R2 DUT C7 C8 L3 L4 C11 C12 C14 N2 RF OUTPUT C15 C16 + C17 VDD
RF INPUT
N1
C1
C1 -- 470 pF, Chip Capacitor C2, C3, C11, C12 -- 20 200 pF, Trimmer, ARCO #464 C4 -- 100 pF, Chip Capacitor C5, C17 -- 100 µF, 15 V, Electrolytic C6 -- 0.001 µF, Disc Ceramic C7, C8, C9, C10 -- 330 pF, Chip Capacitor C14 -- 1200 pF, ATC Chip Capacitor C15 -- 910 pF, 500 V, Dipped Mica C16 -- 47 µF, 16 V, Electrolytic
L1 -- 8 Turns, #20 AWG, 0.126 ID L2 -- 5 Turns, #18 AWG, 0.142 ID L3 -- 3 Turns, #20 AWG, 0.102 ID L4 -- 7 Turns, #24 AWG, 0.070 ID L5 -- 6.5 Turns, #18 AWG, 0.230 ID, 0.5 Long N1, N2 -- Type N Flange Mount RFC1 -- Ferroxcube VK20019/4B R1 -- 39 k, 1/4 W Carbon R2 -- 150 , 1/4 W Carbon Board -- G10 .060
Figure 1. 54 MHz Linear RF Test Circuit Electrical Schematic
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dB) 10 Pout , OUTPUT POWER (WATTS PEP) 100 90 80 70 60 50 40 30 20 10 0 VDD = 12.5 Vdc IDQ = 400 mA f1 = 54 MHz, f2 = 54.001 MHz 1 2 3 Pin, INPUT POWER (WATTS PEP) 4
20
IMD3
30 IMD5 40 VDD = 12.5 Vdc IDQ = 400 mA f1 = 54 MHz, f2 = 54.001 MHz 0 10 20 30 40 50 60 70 OUTPUT POWER (WATTS PEP) 80 90
50
60
Figure 2. IMD versus Output Power
100 Pout , OUTPUT POWER (WATTS CW) Pout , OUTPUT POWER (WATTS CW) 90 80 70 60 50 40 30 20 10 0 VDD = 12.5 Vdc IDQ = 400 mA f = 54 MHz 1 2 3 Pin, INPUT POWER (WATTS CW) 4 100 90 80 70 60 50 40 30 20 10 0 9
Figure 3. Output Power versus Input Power
Pin = 4 W
2W 1W
0.5 W
IDQ = 400 mA f = 54 MHz
10
11 12 13 14 VDD, SUPPLY VOLTAGE (VOLTS)
15
16
Figure 4. Output Power versus Input Power
Figure 5. Output Power versus Supply Voltage
MOTOROLA RF DEVICE DATA
MRF255 3
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