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Part: MRF281
Category:
Description:
Company: Motorola Semiconductor Products
Datasheet: Download MRF281 datasheet File size : 448 kB
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF281/D
The RF SubMicron MOSFET Line
RF Power Field Effect Transistors
NChannel EnhancementMode Lateral MOSFETs
D e s i g n e d for digital and analog cellular PCN and PCS base station applications at frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts in commercial and industrial applications. · Specified TwoTone Performance @ 1930 and 2000 MHz, 26 Volts Output Power = 4 Watts PEP Power Gain = 11 dB Efficiency = 30% Intermodulation Distortion = 29 dBc · Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 4 Watts CW Output Power · Excellent Thermal Stability · Characterized with Series Equivalent LargeSignal Impedance Parameters · SParameter Characterization at High Bias Levels · Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. · LDMOS Models Available at http://www.motorola.com/semiconductors/rf/models/
MRF281SR1 MRF281ZR1
2000 MHz, 4 W, 26 V LATERAL NCHANNEL BROADBAND RF POWER MOSFETs
CASE 458B02, STYLE 1 (MRF281SR1)
CASE 458C02, STYLE 1 (MRF281ZR1)
MAXIMUM RATINGS
Rating DrainSource Voltage GateSource Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 ± 20 20 0.115 65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 5.74 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DrainSource Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) GateSource Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 65 -- -- 74 -- -- -- 10 1 Vdc µAdc µAdc Symbol Min Typ Max Unit
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 1
MOTOR Inc. 2000 © Motorola, OLA RF DEVICE DATA
MRF281SR1 MRF281ZR1 1
ELECTRICAL CHARACTERISTICS continued (TC = 25°C unless otherwise noted)
Characteristic ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 20 µAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 25 mAdc) DrainSource OnVoltage (VGS = 10 Vdc, ID = 0.1 A) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) CommonSource Amplifier Power Gain (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) CommonSource Amplifier Power Gain (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 4 W, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) CommonSource Amplifier Power Gain (VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA, f1 = 2000.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA, f1 = 2000.0 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA, f1 = 2000.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Test) Gps 11 12.5 -- dB Ciss Coss Cr s s -- -- -- 5.5 3.3 0.17 -- -- -- pF pF pF VGS(th) VGS(q) VDS(on) 2.4 3 0.18 3.2 4.1 0.24 4 5 0.30 Vdc Vdc Vdc Symbol Min Typ Max Unit
30
33
--
%
IRL
10
16
--
dB
IMD
--
31
29
dBc
Gps
11
12.5
--
dB
30
--
--
%
IRL
10
16
--
dB
IMD
--
31
--
dBc
Gps
10.5
12
--
dB
40
44
--
%
No Degradation In Output Power
MRF281SR1 MRF281ZR1 2
MOTOROLA RF DEVICE DATA
+ j1
+ j0.5
+ j2
+ j3
+ j0.2
+ j5
2.0 GHz
+ j10
1.9 GHz
0.0 0.2 0.5
Zo = 10
1 2 3 5
1.8 GHz
Zin 1.8 GHz
j10
1.7 GHz
j0.2
2.0 GHz
f = 1.5 GHz
j5
1.6 GHz f = 1.5 GHz
1.6 GHz 1.9 GHz 1.7 GHz ZOL*
j3
j0.5
j2
j1
VDD = 26 V, IDQ = 25 mA, Pout = 4 W (PEP) f MHz 1500 1600 1700 1800 1900 2000 Zin Zin 3.15 j5.3 3.1 j3.8 3.1 j2.3 3.1 j0.7 3.1 + j0.9 3.1 + j2.4 ZOL* 15.5 j13.6 14.7 j12.5 14.0 j11.7 13.4 j11.0 12.8 j10.1 12.2 j9.2
= Complex conjugate of source impedance.
ZOL* = Complex conjugate of the optimum load impedance at given output power, voltage, IMD, bias current and frequency.
Input Matching Network
Device Under Test
Output Matching Network
Z
in
Z
* OL
Figure 1. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF281SR1 MRF281ZR1 3
Others parts begin by mr
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