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Part: MRF282Z
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> JFETs (Junction-FETs)
-> RF FETs
Description: Lateral N-channel Broadband RF Power MOSFETs
Company: Motorola Semiconductor Products
Datasheet: Download MRF282Z datasheet File size : 448 kB
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Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF282/D
The RF SubMicron MOSFET Line
RF Power Field Effect Transistors
Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. · Specified TwoTone Performance @ 2000 MHz, 26 Volts Output Power = 10 Watts (PEP) Power Gain = 11 dB Efficiency = 30% Intermodulation Distortion = 30 dBc · Specified SingleTone Performance @ 2000 MHz, 26 Volts Output Power = 10 Watts (CW) Power Gain = 11 dB Efficiency = 40% · Characterized with Series Equivalent LargeSignal Impedance Parameters · SParameter Characterization at High Bias Levels · Excellent Thermal Stability · Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 10 Watts (CW) Output Power · Gold Metallization for Improved Reliability MAXIMUM RATINGS
Rating DrainSource Voltage GateSource Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature
NChannel EnhancementMode Lateral MOSFETs
MRF282S MRF282Z
10 W, 2000 MHz, 26 V LATERAL NCHANNEL BROADBAND RF POWER MOSFETs
CASE 45803, STYLE 1 (MRF282S)
CASE 458A01, STYLE 1 (MRF282Z)
Symbol VDSS VGS PD Tstg TJ
Value 65 ± 20 60 0.34 65 to +150 200
Unit Vdc Vdc Watts W/°C °C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 2.9 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DrainSource Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) GateSource Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 1.0 1.0 Vdc µAdc µAdc Symbol Min Typ Max Unit
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 1
MOTOR Inc. 1997 © Motorola, OLA RF DEVICE DATA
MRF282S MRF282Z 1
ELECTRICAL CHARACTERISTICS continued (TC = 25°C unless otherwise noted)
Characteristic ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 50 µAdc) DrainSource OnVoltage (VGS = 10 Vdc, ID = 0.5 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 0.5 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 75 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) CommonSource Power Gain (VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) CommonSource Power Gain (VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) CommonSource Power Gain (VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz, Load VSWR = 10:1, All Phase Angles at Frequency of Test) Gps 11 12.6 -- dB Ciss Coss Cr s s -- -- -- 15 8.0 0.45 -- -- -- pF pF pF VGS(th) VDS(on) gfs VGS(q) 2.0 -- 0.5 3.0 3.0 0.4 0.7 4.0 4.0 0.6 -- 5.0 Vdc Vdc S Vdc Symbol Min Typ Max Unit
30
34
--
%
IMD
--
32.5
30
dBc
IRL
10
14
--
dB
Gps
11
12.6
--
dB
--
30
--
%
IMD
--
32.5
--
dBc
IRL
10
14
--
dB
Gps
11 40
12.3 45
-- --
dB %
No Degradation In Output Power
MRF282S MRF282Z 2
MOTOROLA RF DEVICE DATA
B4 B1 VGG + C1 R1 C3 R2 C5 R3 C9 C11 R4 B2 B3 C8 C10
B5
B6 VDD C17
+ C14 R5 C15 R6
L3 L2 RF INPUT C2 Z1 Z2 C4 Z3 C6 Z4 Z5 Z6 C12 L1 C7 DUT C13 L4 Z7 Z8 Z9 Z10 RF OUTPUT C16
B1, B2, B3, B4, B5, B6 C1, C17 C2, C4, C12 C3, C15 C5, C14 C6, C8, C10, C13 C7 C9, C11 C16 L1 L2 L3 L4
Ferrite Bead, Ferroxcube, 56590653B 470 µF, Electrolytic Capacitor, Mallory 0.64.5 pF, Variable Capacitor, Johanson 0.1 µF, Chip Capacitor, Kemet 1000 pF, B Case Chip Capacitor, ATC 12 pF, B Case Chip Capacitor, ATC 1.8 pF, B Case Chip Capacitor, ATC 100 pF, B Case Chip Capacitor, ATC 0.42.5 pF, Variable Capacitor, Johanson Straight Wire, 21 AWG, 0.3 8 Turns, 0.042 ID, 24 AWG, Enamel 9 Turns, 0.046 ID, 26 AWG, Enamel 3 Turns, 0.048 ID, 25 AWG, Enamel
R1, R2, R3, R4, R5, R6 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Board
12 , 0.2 W Chip Resistor, Rohm
0.155 x 0.08 Microstrip 0.280 x 0.08 Microstrip 0.855 x 0.08 Microstrip 0.483 x 0.08 Microstrip 0.200 x 0.330 Microstrip 0.220 x 0.330 Microstrip 0.490 x 0.330 Microstrip 0.510 x 0.08 Microstrip 0.990 x 0.08 Microstrip 0.295 x 0.08 Microstrip 35 Mils Glass Teflon®, Arlon GX300, r = 2.55 Input/Output Connectors Type N Flange Mount
Figure 1. Schematic of 1.93 2.0 GHz Broadband Test Circuit
MOTOROLA RF DEVICE DATA
MRF282S MRF282Z 3
Others parts begin by mr
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