|
|
Part: MRF282ZR1
Category:
RF & Microwaves
-> Transistors
-> FETs
-> MOSFETs
-> Power
Description: MRF282SR1, MRF282ZR1 2000 Mhz, 10 W, 26 V Lateral N-channel Broadband RF Power MOSFETs
Company: Motorola Semiconductor Products
Datasheet: Download MRF282ZR1 datasheet File size : 448 kB
Request For quote: Find where to buy MRF282ZR1
Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF282/D
The RF SubMicron MOSFET Line
RF Power Field Effect Transistors
NChannel EnhancementMode Lateral MOSFETs
Designed for Class A and Class AB PCN and PCS base station applications w i t h frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. · Specified TwoTone Performance @ 2000 MHz, 26 Volts Output Power -- 10 Watts PEP Power Gain -- 10.5 dB Efficiency -- 28% Intermodulation Distortion -- 31 dBc · Specified SingleTone Performance @ 2000 MHz, 26 Volts Output Power -- 10 Watts CW Power Gain -- 9.5 dB Efficiency -- 35% · Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 10 Watts CW Output Power · Excellent Thermal Stability · Characterized with Series Equivalent LargeSignal Impedance Parameters · Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.
MRF282SR1 MRF282ZR1
2000 MHz, 10 W, 26 V LATERAL NCHANNEL BROADBAND RF POWER MOSFETs
CASE 458B03, STYLE 1 (NI200S) (MRF282SR1)
CASE 458C03, STYLE 1 (NI200Z) (MRF282ZR1)
MAXIMUM RATINGS
Rating DrainSource Voltage GateSource Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 ±20 60 0.34 65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol R J C Max 4.2 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DrainSource Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) GateSource Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 1.0 1.0 Vdc µAdc µAdc Symbol Min Typ Max Unit
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 12
MOTO Inc. 2002 Motorola,ROLA RF DEVICE DATA
MRF282SR1 MRF282ZR1 1
ELECTRICAL CHARACTERISTICS continued (TC = 25°C unless otherwise noted)
Characteristic ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 50 µAdc) DrainSource OnVoltage (VGS = 10 Vdc, ID = 0.5 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 75 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) CommonSource Power Gain (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) CommonSource Power Gain (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) CommonSource Power Gain (VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz, Load VSWR = 10:1, All Phase Angles at Frequency of Test) Gps 10.5 11.5 -- dB Ci s s Co s s Crss -- -- -- 15 8.0 0.45 -- -- -- pF pF pF VGS(th) VDS(on) VGS(q) 2.0 -- 3.0 3.0 0.4 4.0 4.0 0.6 5.0 Vdc Vdc Vdc Symbol Min Typ Max Unit
28
--
--
%
IMD
--
31
28
dBc
IRL
--
14
9
dB
Gps
10.5
11.5
--
dB
28
--
--
%
IMD
--
31
28
dBc
IRL
--
14
9
dB
Gps
9.5 35
11.5 40
-- --
dB %
No Degradation In Output Power
MRF282SR1 MRF282ZR1 2
MOTOROLA RF DEVICE DATA
R2 VGG
R3 R4 Z6 C7 C8 Z12 C10 C11 C13
R5 B3 B4 C16 + C18 VDD
+ C3
R1
B1
C4
B2
C5
RF INPUT
Z5 Z1 Z2 C1 Z3 C2 C6 Z4 Z7 Z8 C9 DUT
Z11 Z9 Z10 C12 Z13 Z14 C14 C15 Z15 Z16 C17
RF OUTPUT
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10
0.491 x 0.080 Microstrip 0.253 x 0.080 Microstrip 0.632 x 0.080 Microstrip 0.567 x 0.080 Microstrip 1.139 x 0.055 Microstrip 0.236 x 0.055 Microstrip 0.180 x 0.325 Microstrip 0.301 x 0.325 Microstrip 0.439 x 0.325 Microstrip 0.055 x 0.325 Microstrip
Z11 Z12 Z13 Z14 Z15 Z16 Raw Board Material
0.636 x 0.055 Microstrip 0.303 x 0.055 Microstrip 0.463 x 0.080 Microstrip 0.105 x 0.080 Microstrip 0.452 ± 0.085 x 0.080 Microstrip 0.910 ± 0.085 x 0.080 Microstrip 0.030 Glass Teflon, 2 oz Copper, 3 x 5 Dimensions, Arlon GX03005522, r = 2.55
Figure 1. 1.93 2.0 GHz Broadband Test Circuit Schematic Table 1. 1.93 2.0 GHz Broadband Test Circuit Component Designations and Values
Designators B1, B4 B2, B3 C1, C2, C9 C3 C4, C5, C13, C16 C6 C7 C8 C10 C11 C12 C14 C15 C17 C18 R1 R2, R5 R3, R4 WS1, WS2 Description Surface Mount Ferrite Beads, 0.120 x 0.333 x 0.100, Fair Rite #2743019446 Surface Mount Ferrite Beads, 0.120 x 0.170 x 0.100, Fair Rite #2743029446 0.88.0 pF Variable Capacitors, Johanson Gigatrim #27291SL 10 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet #T495X106K035AS4394 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS 200 pF Chip Capacitor, B Case, ATC #100B201JCA500X 18 pF Chip Capacitor, B Case, ATC #100B180KP500X 39 pF Chip Capacitor, B Case, ATC #100B390JCA500X 27 pF Chip Capacitor, B Case, ATC #100B270JCA500X 1.2 pF Chip Capacitor, B Case, ATC #100B1R2CCA500X 0.64.5 pF Variable Capacitor, Johanson Gigatrim #27271SL 0.5 pF Chip Capacitor, B Case, ATC #100B0R5BCA500X 15 pF Chip Capacitor, B Case, ATC #100B150JCA500X 0.1 pF Chip Capacitor, B Case, ATC #100B0R1BCA500X 22 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet #T491X226K035AS4394 560 k, 1/4 W Chip Resistor, 0.08 x 0.13 12 , 1/4 W Chip Resistors, 0.08 x 0.13, Garrett Instruments #RM73B2B120JT 91 W, 1/4 W Chip Resistors, 0.08 x 0.13, Garrett Instruments #RM73B2B910JT Beryllium Copper Wear Blocks 0.010 x 0.235 x 0.135 NOM Brass Banana Jack and Nut Red Banana Jack and Nut Green Banana Jack and Nut Type "N" Jack Connectors, OmniSpectra # 3052164810 440 Ph Head Screws, 0.125 Long 440 Ph Head Screws, 0.188 Long 440 Ph Head Screws, 0.312 Long 440 Ph Rec. Hd. Screws, 0.438 Long RF Circuit Board 3 x 5 Copper Clad PCB, Glass Teflon
MOTOROLA RF DEVICE DATA
MRF282SR1 MRF282ZR1 3
Others parts begin by mr
|
|
|
