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Part: MRF284LR1
Category:
Description: 2.0 Ghz, 30 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
Company: Motorola Semiconductor Products
Datasheet: Download MRF284LR1 datasheet File size : 448 kB
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRF284/D
The RF Sub - Micron MOSFET Line
RF Power Field Effect Transistors
Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and Class AB for PCN - PCS/cellular radio and wireless local loop. · Specified Two - Tone Performance @ 2000 MHz, 26 Volts Output Power = 30 Watts PEP Power Gain = 9 dB Efficiency = 30% Intermodulation Distortion = - 29 dBc · Typical Single - Tone Performance at 2000 MHz, 26 Volts Output Power = 30 Watts CW Power Gain = 9.5 dB Efficiency = 45% · Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts CW Output Power · Excellent Thermal Stability · Characterized with Series Equivalent Large - Signal Impedance Parameters · In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. · Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ Nominal.
N - Channel Enhancement - Mode Lateral MOSFETs
MRF284LR1 MRF284LSR1
2000 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 360B - 05, STYLE 1 NI - 360 MRF284LR1
CASE 360C - 05, STYLE 1 NI - 360S MRF284LSR1
MAXIMUM RATINGS
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 ± 20 87.5 0.5 - 65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 2.0 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain - Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0) Gate - Source Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 1.0 10 Vdc µAdc µAdc Symbol Min Typ Max Unit
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 14
MOTO Inc. 2003 Motorola,ROLA RF DEVICE DATA
For More Information On This Product, Go to: www.freescale.com
MRF284LR1 MRF284LSR1 1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS -- continued (TC = 25°C unless otherwise noted)
Characteristic ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 µAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 200 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.0 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 1.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Ciss Coss Crss -- -- -- 43 23 1.4 -- -- -- pF pF pF VGS(th) VGS(q) VDS(on) gfs 2.0 3.0 -- -- 3.0 4.0 0.3 1.5 4.0 5.0 0.6 -- Vdc Vdc Vdc S Symbol Min Typ Max Unit
Freescale Semiconductor, Inc...
Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) FUNCTIONAL TESTS (in Motorola Test Fixture, 50 ohm system) Common - Source Power Gain (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA, f1 = 2000.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA, f1 = 2000.0 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA, f1 = 2000.0 MHz, VSWR = 10:1, at All Phase Angles)
Gps
9
10.5
--
dB
30
35
--
%
IMD
--
- 32
- 29
dBc
IRL
--
- 15
-9
dB
Gps
9
10.4
--
dB
--
35
--
%
IMD
--
- 34
--
dBc
IRL
--
- 15
-9
dB
Gps
8.5
9.5
--
dB
35
45
--
%
No Degradation In Output Power
MRF284LR1 MRF284LSR1 2
For More Information On This Product, Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
VGG + R1 W1 C3 C4 R2 R3 R5 R6 W2 C12 R7 W3 C14 VDD + C17 + C18
B1 C6 R4
B2 C7 C15 C13
B3
L1 Z10 RF INPUT Z1 Z2 C1 Z3 C2 C5 Z4 Z5 Z6 Z7 C8 Z8 C9 DUT Z9 C10 Z11 Z12 Z13 C11
L2
L3 RF OUTPUT
Z14
Z15 C16
Z16
Z17
Freescale Semiconductor, Inc...
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10
0.530 x 0.080 Microstrip 0.255 x 0.080 Microstrip 0.600 x 0.080 Microstrip 0.525 x 0.080 Microstrip 0.015 x 0.325 Microstrip 0.085 x 0.325 Microstrip 0.165 x 0.325 Microstrip 0.110 x 0.515 Microstrip 0.095 x 0.515 Microstrip 0.050 x 0.515 Microstrip
Z11 Z12 Z13 Z14 Z15 Z16 Z17 PCB
0.155 x 0.515 Microstrip 0.120 x 0.325 Microstrip 0.150 x 0.325 Microstrip 0.010 x 0.325 Microstrip 0.505 x 0.080 Microstrip 0.865 x 0.080 Microstrip 0.525 x 0.080 Microstrip Arlon GX0300 - 55 - 22, 0.030, r = 2.55
Figure 1. 1.93 - 2.0 GHz Broadband Test Circuit Schematic Table 1. 1.93 - 2.0 GHz Broadband Test Circuit Component Designations and Values
Designators B1 - B3 C1, C2, C8 C3, C17 C4, C14 C5 C6, C12 C7, C13 C9 C10 C11 C15, C16 C18 L1, L2 L3 R1, R2, R3, R5, R6, R7 R4 W1, W2, W3 WS1, WS2 Description Ferrite Beads, Round, Ferroxcube #56 - 590 - 65 - 3B 0.8 - 8.0 pF Gigatrim Variable Capacitors, Johanson #27291SL 22 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS 220 pF Chip Capacitor, B Case, ATC #100B221KP500X 1000 pF Chip Capacitors, B Case, ATC #100B102JCA50X 5.1 pF Chip Capacitors, B Case, ATC #100B5R1CCA500X 1.2 pF Chip Capacitor, B Case, ATC #100B1R2CCA500X 2.7 pF Chip Capacitor, B Case, ATC #100B2R7CCA500X 0.6 - 4.5 pF Gigatrim Variable Capacitors, Johanson #27271SL 200 pF Chip Capacitors, B Case, ATC #100B201KP500X 10 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet #T495X106K035AS4394 4 Turns, #24 AWG, 0.120 OD, 0.140 Long, (12.5 nH), Coilcraft #A04T - 5 2 Turns, #24 AWG, 0.120 OD, 0.140 Long, (5.0 nH), Coilcraft #A02T - 5 12 , 1/4 W Chip Resistors, 0.08 x 0.13, Garrett Instruments #RM73B2B120JT 560 k, 1/4 W Chip Resistor, 0.08 x 0.13 Solid Copper Buss Wire, 16 AWG Beryllium Copper Wear Blocks 0.005 x 0.250 x 0.250
MOTOROLA RF DEVICE DATA
For More Information On This Product, Go to: www.freescale.com
MRF284LR1 MRF284LSR1 3
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