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Part: MRF2947AT2
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
Description: Low Noise Transistors
Company: Motorola Semiconductor Products
Datasheet: Download MRF2947AT2 datasheet File size : 448 kB
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Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF2947/D
The RF Line
NPN Silicon Low Noise Transistors
Motorola's MRF2947 device contains two high performance, lownoise NPN silicon bipolar transistors. This device has two 941 die housed in the high p e r f o r m a n c e six leaded SC70ML package; yielding a 9 GHz current gainbandwidth product. The RF performance at levels of 1 volt and 1 mA makes the MRF2947 well suited for lowvoltage, lowcurrent, frontend applications such as paging, cellular, GSM, DECT, CT2 and other portable wireless systems. The MRF2947 i s fully ionimplanted with gold metallization and nitride passivation for maximum device reliability, performance and uniformity. · Low Noise Figure, NF = 1.5 dB (Typ) @ 1 GHz @ 5 mA · High Current GainBandwidth Product, ft = 9 GHz (Typ) @ 6 Volts, 15 mA · Maximum Stable Gain, 18 dB @ 1 GHz @ 5 mA · Output Third Order Intercept, OIP3 = +27 dBm · Available in Tape and Reel Packaging Options: T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel T2 Suffix = 3,000 Units per 8 mm, 7 inch Reel (reverse device orientation in tape)
CASE 419B01, STYLES 16 & 17 SC70ML/SOT363
MRF2947AT1,T2 MRF2947RAT1,T2
ICmax = 50 mA LOW NOISE TRANSISTORS
STYLE 16 B1 E2 C2 MRF2947AT1,T2 C1 E1 B2 B1 E1 C2
STYLE 17 C1 E2 B2 MRF2947RAT1,T2
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Power Dissipation (1) TC = 75°C Derate linearly above TC = 75°C @ Collector Current -- Continuous (2) Maximum Junction Temperature Storage Temperature Thermal Resistance, Junction to Case Symbol VCEO VCBO VEBO PDmax IC TJmax Tstg RJC Value 10 20 1.5 0.188 2.5 50 150 55 to +150 400 Unit Vdc Vdc Vdc Watts mW/°C mA °C °C °C/W
DEVICE MARKINGS
MRF2947AT1,T2 = WU MRF2947RAT1,T2 = XR (1) To calculate the junction temperature use TJ = PD x RJC + TC. The case temperature is measured on collector lead adjacent to the package body. (2) IC -- Continuous (MTBF > 10 years).
©MOTOROLA RF DEVICE DATA Motorola, Inc. 1997
MRF2947AT1,T2 MRF2947RAT1,T2 1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS (3)
CollectorEmitter Breakdown Voltage (IC = 0.1 mA, IB = 0) CollectorBase Breakdown Voltage (IC = 0.1 mA, IE = 0) Emitter Cutoff Current (VEB = 1 V, IC = 0) Collector Cutoff Current (VCB = 10 V, IE = 0) V(BR)CEO V(BR)CBO IEBO ICBO 10 20 -- -- 12 23 -- -- -- -- 0.1 0.1 Vdc Vdc µA µA
ON CHARACTERISTICS (3)
DC Current Gain (VCE = 1 V, IC = 500 µA) DC Current Gain (VCE = 6 V, IC = 5 mA) hFE1 hFE3 50 75 -- -- -- 150 -- --
DYNAMIC CHARACTERISTICS
CollectorBase Capacitance (VCB = 1 V, IE = 0, f = 1 MHz) Current Gain -- Bandwidth Product (VCE = 6 V, IC = 15 mA, f = 1 GHz) Cc b fT -- -- 0.42 9 -- -- pF GHz
PERFORMANCE CHARACTERISTICS
Conditions Insertion Gain (VCE = 1 V, IC = 1 mA, f = 1 GHz) (VCE = 6 V, IC = 15 mA, f = 1 GHz) Maximum Unilateral Gain (4) (VCE = 1 V, IC = 1 mA, f = 1 GHz) (VCE = 6 V, IC = 15 mA, f = 1 GHz) Maximum Stable Gain and/or Maximum Available Gain (5) (VCE = 1 V, IC = 1 mA, f = 1 GHz) (VCE = 6 V, IC = 15 mA, f = 1 GHz) Noise Figure -- Minimum (VCE = 1 V, IC = 1 mA, f = 1 GHz) (VCE = 6 V, IC = 5 mA, f = 1 GHz) Noise Resistance (VCE = 1 V, IC = 1 mA, f = 1 GHz) (VCE = 6 V, IC = 5 mA, f = 1 GHz) Associated Gain at Minimum NF (VCE = 1 V, IC = 1 mA, f = 1 GHz) (VCE = 6 V, IC = 5 mA, f = 1 GHz) Output Power at 1 dB Gain Compression (6) (VCE = 6 V, IC = 15 mA, f = 1 GHz) Output Third Order Intercept (6) (VCE = 6 V, IC = 15 mA, f = 1 GHz) Symbol |S21|2 -- -- GUmax -- -- MSG MAG NFmin -- -- RN -- -- G NF -- -- P1dB OIP3 -- -- 9 14 +13 +27 -- -- -- -- dBm dBm 22 17 -- -- dB 1.8 1.5 -- -- -- -- 13 17 12 18 -- -- dB -- -- dB 7 15 -- -- dB Min Typ Max Unit dB
(3) Pulse width 300 µs, duty cycle 2% pulsed. |S21|2 (4) Maximum unilateral gain is GUmax = (1 |S11|2)(1 |S22|2) |S21| (5) Maximum available gain and maximum stable gain are defined by the K factor as follows: MAG = K2 1 , if K > 1 (K |S12| (6) ZO = 50 and Zout matched for small signal maximum gain. |S21| MSG = , if K < 1 |S12|
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MRF2947AT1,T2 MRF2947RAT1,T2 2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
1.4 1.2 C, CAPACITANCE (pF) 1.0 0.8 0.6 0.4 0.2 0 0 2 4 6 VCB, REVERSE VOLTAGE (V) 8 10 Cob Ccb f = 1 MHz C IB, INPUT CAPACITANCE 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.8 1.0 1.2 1.4 1.6 0.6 VEB, EMITTERBASE VOLTAGE (V) 1.8 2.0 CIb f = 1 MHz
Figure 1. Capacitance versus Voltage
Figure 2. Input Capacitance versus Voltage
180 f T , GAIN BANDWIDTH PRODUCT (GHz) 160 h FE , DC CURRENT GAIN 140 120 100 80 60 40 20 0.1 1 10 100 VCE = 1 V
10 9 8 7 6 5 4 3 2 1 0.1 1 10 IC, COLLECTOR CURRENT (mA) 100 VCE = 6 V f = 1 GHz
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain versus Collector Current
Figure 4. GainBandwidth Product versus Collector Current
VCE VBE
RF INPUT Pin BIAS NETWORK
DUT *SLUG TUNER *SLUG TUNER BIAS NETWORK *MICROLAB/FXR SF11N 1 GHz
RF OUTPUT Pout
Figure 5. Functional Circuit Schematic
MOTOROLA RF DEVICE DATA
MRF2947AT1,T2 MRF2947RAT1,T2 3
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