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Part: MRF3010
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> JFETs (Junction-FETs)
-> RF FETs
Description: Lateral N-channel Broadband RF Power MOSFET
Company: Motorola Semiconductor Products
Datasheet: Download MRF3010 datasheet File size : 448 kB
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Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF3010/D
The RF MOSFET Line
RF Power Field Effect Transistor
MRF3010
10 W, 1.6 GHz, 28 V LATERAL NCHANNEL BROADBAND RF POWER MOSFET
NChannel EnhancementMode Lateral MOSFET
Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB, CW amplifier applications. D · Guaranteed Performance @ 1.6 GHz, 28 Volts Output Power = 10 Watts Minimum Gain = 9.5 dB @ 10 Watts Minimum Efficiency = 45% @ 10 Watts · High Gain, Rugged Device · Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances · Broadband Performance of This Device Makes It Ideal for Applications from 800 to 1700 MHz, CommonSource Class AB Operation. · Typical Performance at Class A Operation: Pout = 2 Watts, VDD = 28 Volts, IDQ = 1 A, Gain = 12.5 dB, IMD = 32 dB · Capable of Handling 30:1 VSWR, @ 28 Vdc · Circuit Board Available Upon Request by Contacting RF Tactical Marketing in Phoenix, AZ
G CASE 360B01, STYLE 1 S
· Characterized with SmallSignal SParameters from 500 to 2500 MHz
MAXIMUM RATINGS
Rating DrainSource Voltage GateSource Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value 65 ± 20 65 to +150 200 Unit Vdc Vdc °C °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage (VGS = 0, ID = 1 µA) Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) GateSource Leakage Current (VGS = 20 V, VDS = 0) V(BR)DSS IDSS IGSS 65 10 1 Vdc µAdc µAdc
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 1
©MOTOROLA RF DEVICE DATA Motorola, Inc. 1998
MRF3010 1
ELECTRICAL CHARACTERISTICS continued (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 50 mA) DrainSource OnVoltage (VGS = 10 V, ID = 1 A) Forward Transconductance (VDS = 10 V, ID = 1 A) VGS(th) VDS(on) gfs 2 0.35 2.5 1.5 0.55 5 Vdc Vdc mhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Ciss Coss Cr s s 15 9 0.7 pF pF pF
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain (VDD = 28 Vdc, Pout = 10 W, IDQ = 50 mA, f = 1.6 GHz) Drain Efficiency (VDD = 28 Vdc, Pout = 10 W, IDQ = 50 mA, f = 1.6 GHz) Output Mismatch Stress (VDS = 28 Vdc, Pout = 10 W, IDQ = 50 mA, f = 1600 MHz, Load VSWR 30:1 at All Phase Angles) Series Equivalent Input Impedance (VDD = 28 Vdc, Pout = 10 W, IDQ = 50 mA, f = 1.6 GHz) Series Equivalent Output Impedance (VDD = 28 Vdc, Pout = 10 W, IDQ = 50 mA, f = 1.6 GHz) Gps 9.5 45 10.5 50 dB %
Zin Zol
No Degradation in Output Power 3.1+j7.18 6.16j4.75
L1 VGG INPUT R1 C4 C5
R2 C6 L2 C9 C10 C11
L3 + R3 R4 C13
VDD INPUT
RF INPUT
Z1 C1 C2
Z2
Z3 DUT C3
Z4
Z5
Z6 C12
RF OUTPUT
C7
C8
C1, C6, C10, C12 C2, C3, C7, C8 C4, C11 C5, C9 C13 L1 L2 L3 R1
24 pF, "A" Chip Capacitor, ATC 0.88.0 pF, Variable Capacitor, Johansen Gigatrim 240 pF, "A" Chip Capacitor, ATC 0.1 µF, Ceramic Capacitor 50 µF, 50 V, Electrolytic Capacitor Ferroxcube VK20019/4B 2 Turns, 0.175 ID, 20 AWG, Close Wound 10 Turns, 20 AWG, Close Wound 1 k, 1/4 W Resistor
R2 R3 R4 Z1 Z2 Z3 Z4 Z5 Z6
220 , 1/4 W Resistor 10 k, 2 W Resistor 10 k, 1/8 W Resistor 0.081 x 0.42 Microstrip 0.081 x 1.24 Microstrip 0.32 x 0.48 Microstrip 0.35 x 0.5 Microstrip 0.15 x 0.44 Microstrip 0.081 x 1.165 Microstrip
Figure 1. 1.6 GHz Test Circuit Schematic
MRF3010 2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
14 14 Pout , OUTPUT POWER (WATTS) 12 10 8 6 4 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 Pin, INPUT POWER (Watts) VDS = 28 Vdc IDQ = 50 mA f = 1.6 GHz Pout , OUTPUT POWER (WATTS) f = 1.64 GHz 12 10 8 6 4 2 0 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 VDS, DRAIN VOLTAGE (V) 0.5 W 0.25 W VDS = 28 Vdc IDQ = 50 mA f = 1.6 GHz Pin = 1 W 0.75 W
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Drain Voltage
100
Ciss C, CAPACITANCE (pF) 10 Coss
1.0
Crss
0.1 0 5 10 15 20 25 30 VDS, DRAIN SOURCE VOLTAGE (V)
Figure 4. Capacitance versus Drain Voltage
MOTOROLA RF DEVICE DATA
MRF3010 3
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