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Details, datasheet, quote on part number:MTB36N06E
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB36N06E/D
TM Data Sheet TMOS E-FET.TM High Energy Power FET D2PAK for Surface Mount
Designer's
MTB36N06E
Motorola Preferred Device
NChannel EnhancementMode Silicon Gate
The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced T M O S EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in p o w e r supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
TMOS POWER FET 36 AMPERES 60 VOLTS RDS(on) = 0.04 OHM
®
D
· Avalanche Energy Specified G · SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode · Diode is Characterized for Use in Bridge Circuits · IDSS and VDS(on) Specified at Elevated Temperature · Short Heatsink Tab Manufactured -- Not Sheared · Specially Designed Leadframe for Maximum Power Dissipation · Available in 24 mm 13inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DraintoSource Voltage DraintoGate Voltage (RGS = 1.0 M) GatetoSource Voltage -- Continuous Drain Current -- Continuous Drain Current -- Continuous @ 100°C Drain Current -- Single Pulse (tp 10 µs)
CASE 418B02, Style 2 D2PAK S
Symbol VDSS VDGR VGS ID ID IDM PD
Value 60 60 ± 20 36 22 144 100 0.80 2.5 55 to 150 220 1.25 62.5 50 260
Unit Vdc Vdc Vdc Amps Apk Watts W/°C Watts °C mJ °C/W
Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted with the minimum recommended pad size Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy -- Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vpk, IL = 36 Apk, L = 0.34 mH, RG = 25 ) Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Thermal Resistance -- Junction to Ambient, when mounted with the minimum recommended pad size Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds
TJ, Tstg EAS RJC RJA RJA TL
°C
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
©Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1994
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MTB36N06E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DrainSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C) GateBody Leakage CurrentForward (Vgsf = 20 Vdc, VDS = 0) GateBody Leakage CurrentReverse (Vgsr = 20 Vdc, VDS = 0) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) Static DrainSource OnResistance (VGS = 10 Vdc, ID = 18 Adc) DrainSource OnVoltage (VGS = 10 Vdc) (ID = 36 Adc) (ID = 18 Adc, TJ = 125°C) Forward Transconductance (VDS = 8.0 Vdc, ID = 18 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 8) (VDS = 48 Vdc, ID = 36 Adc, VGS = 10 Vdc) (VDD = 30 Vdc, ID = 36 Adc, VGS = 10 Vdc, RG = 10 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (1) (IS = 36 Adc, VGS = 0 Vdc) (IS = 36 Adc, VGS = 0 Vdc, TJ = 125°C) (IS = 36 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) VSD -- -- trr Q RR -- -- 1.5 1.25 110 230 2.0 -- -- -- ns nC Vdc -- -- -- -- -- -- -- -- 18 100 45 50 38 10 15 14 36 200 90 100 47 -- -- -- nC ns (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss -- -- -- 1300 600 150 2000 850 350 pF VGS(th) 2.0 -- RDS(on) VDS(on) -- -- gFS 8.0 1.33 1.00 -- 1.75 1.44 -- mhos -- 2.8 6.5 0.034 4.0 -- 0.04 Vdc mV/°C Ohm Vdc V(BR)DSS 60 -- IDSS -- -- IGSSF IGSSR -- -- -- -- -- -- 10 100 100 100 nAdc nAdc -- 61 -- -- Vdc mV/°C µAdc Symbol Min Typ Max Unit
Reverse Recovery Time (See Figure 14) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the tab to center of die)
LD LS
-- --
3.5 7.5
-- --
nH nH
Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature.
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Motorola TMOS Power MOSFET Transistor Device Data
MTB36N06E
TYPICAL ELECTRICAL CHARACTERISTICS
80 10 V TJ = 25°C I D , DRAIN CURRENT (AMPS) 60 7V 40 6V 20 5V VGS = 4 V 0 0 2 4 6 8 10 0 0 2 4 6 8 10 9V 8V I D , DRAIN CURRENT (AMPS) 60 80 VDS 10 V TJ = 55°C 25°C 100°C
40
20
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS)
Figure 2. Transfer Characteristics
0.8 VGS = 10 V 0.6 TJ = 100°C 0.4 25°C 55°C 0.2
40 38 36 34 32 30 28 26 24 22 20 0 10 20 30 40 50 60 70 80 15 V VGS = 10 V TJ = 25°C
0
0
10
20
30
40
50
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current and Temperature
2.2 VGS = 10 V ID = 18 A I DSS , LEAKAGE (nA) 1.8
Figure 4. OnResistance versus Drain Current and Gate Voltage
RDS(on) , DRAINTOSOURCE RESISTANCE (NORMALIZED)
1000 VGS = 0 V
400
TJ = 125°C 100°C
1.4
200
1
25°C
0.6 50
25
0
25
50
75
100
125
150
175
100 15
20
25
30
35
40
45
50
55
60
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 5. OnResistance Variation with Temperature
Figure 6. DrainToSource Leakage Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
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