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Details, datasheet, quote on part number:MW4IC2020GMBR1
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| Part: | MW4IC2020GMBR1 |
| Category: | RF & Microwaves => Base Station Drivers |
| Description: | MW4IC2020MBR1, MW4IC2020GMBR1 Gsm/gsm Edge, Cdma, 1.805-1.99 Ghz, 20 W, 26 V RF Ldmos Wideband Integrated Power Amplifiers |
| Company: | Motorola Semiconductor Products |
| Datasheet: | Download MW4IC2020GMBR1 datasheet File size : 229 kB |
| Request For quote: | Find where to buy MW4IC2020GMBR1
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Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MW4IC2020/D
The Wideband IC Line
RF LDMOS Wideband Integrated Power Amplifiers
The MW4IC2020 wideband integrated circuit is designed for base station applications. It uses Motorola's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multistage structure. Its wideband On Chip design makes it usable from 1.805 to 1.99 GHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, CDMA and WCDMA. Output Application Typical TwoTone Performance: 26 Volts, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, Pout = 10 Watts Avg., Full Frequency Band Power Gain -- 29 dB IMD -- 32 dBc Efficiency -- 26% (at 1805 MHz) and 20% (at 1990 MHz) Driver Applications Typical GSM EDGE Performance: 26 Volts, IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA, Pout = 5 Watts Avg., Full Frequency Band Power Gain -- 29 dB Spectral Regrowth @ 400 kHz Offset = 66 dBc Spectral Regrowth @ 600 kHz Offset = 77 dBc EVM -- 1% Typical CDMA Performance: IS97 Pilot, Sync, Paging, Traffic Codes 8 through 13, 26 Volts, Pout = 1 Watt Avg., Full Frequency Band Bias Currents -- IDQ1 = 80 mA, IDQ2 = 240 mA, IDQ3 = 250 mA Power Gain -- 30 dB ACPR @ 885 kHz Offset = 61 dBc @ 30 kHz Bandwidth ALT1 @ 1.25 MHz Offset = 69 dBc @ 12.5 kHz Bandwidth ALT2 @ 2.25 MHz Offset = 59 dBc @ 1 MHz Bandwidth · Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 8 Watts CW Output Power · On Chip Matching (50 Ohm Input, >5 Ohm Output) · Integrated Bias Circuit · Integrated Temperature Compensation with Enable/Disable Function · Usable from 1.805 to 1.99 GHz, All Cellular Modulations · Integrated ESD Protection · Usable for SCPA and MCPA Architecture · Can Be Bolted or Soldered through a Hole in the Circuit Board for Maximum Thermal Performance · Also Available in Gull Wing for Surface Mount · Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
VGS1 VGS2 VGS3
MW4IC2020MBR1 MW4IC2020GMBR1
GSM/GSM EDGE, CDMA 1.8051.99 GHz, 20 W, 26 V RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
CASE 132909 TO272 WIDE BODY MULTILEAD PLASTIC MW4IC2020MBR1
CASE 1329A03 TO272 WIDE BODY MULTILEAD GULL WING PLASTIC MW4IC2020GMBR1
PIN CONNECTIONS
Temperature Compensation GND VDS2 VDS1 1 2 3 4 5 6 7 8 9 10 11 16 15 GND
RFin IC VDS1 VDS2 VDS3 3 Stages IC
RFout IC
RFin IC VGS1 VGS2 VGS3 GND
14
RFout IC +VDS3
13 12
GND
Functional Block Diagram
REV 1
(Top View)
MOTO Inc. 2003 Motorola,ROLA RF DEVICE DATA
MW4IC2020MBR1 MW4IC2020GMBR1 1
MAXIMUM RATINGS
Rating DrainSource Voltage GateSource Voltage Storage Temperature Range Operating Junction Temperature Input Power Symbol VDSS VGS Tstg TJ Pin Value 65 0.5, +15 65 to +175 175 20 Unit Vdc Vdc °C °C dBm
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Stage 1 Stage 2 Stage 3 Symbol R J C Typ 10.5 5.1 2.3 Unit °C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Charge Device Model Class 2 (Minimum) M3 (Minimum) C5 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology Per JESD 22A113 Rating 3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit FUNCTIONAL TESTS (In Motorola Wideband 1.8051.99 GHz Test Fixture, 50 ohm system) VDS = 26 V, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, TC = 25°C, TwoTone CW CommonSource Amplifier Power Gain (Pout = 20 W PEP, f1 = 1990 MHz, f2 = 1990.1 MHz and f1 = 1805 MHz, f2 = 1805.1 MHz) Drain Efficiency (Pout = 20 W PEP) Gps 27 29 -- dB
f1 = 1805 MHz, f2 = 1805.1 MHz f1 = 1990 MHz, f2 = 1990.1 MHz IRL 24 18 -- 26 20 --
--
%
Input Return Loss (Pout = 20 W PEP, f1 = 1990 MHz, f2 = 1990.1 MHz and f1 = 1805 MHz, f2 = 1805.1 MHz) Intermodulation Distortion (Pout = 20 W PEP, f1 = 1990 MHz, f2 = 1990.1 MHz and f1 = 1805 MHz, f2 = 1805.1 MHz) Stability (100 mW10
dB
IMD
--
32
27
dBc
No Spurious > 60 dBc
TYPICAL PERFORMANCES (In Motorola Test Fixture) VDS = 26 V, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, 1.805 GHzDelay
ns ° (continued)
MW4IC2020MBR1 MW4IC2020GMBR1 2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS -- continued (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit TYPICAL PERFORMANCES (In Modified CDMA Test Fixture) VDS = 26 V, IDQ1 = 80 mA, IDQ2 = 240 mA, IDQ3 = 250 mA, 1.93 GHzTYPICAL PERFORMANCES (In Modified GSM EDGE Test Fixture) VDS = 26 V, IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA, 1.805 GHzMOTOROLA RF DEVICE DATA
MW4IC2020MBR1 MW4IC2020GMBR1 3
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