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Details, datasheet, quote on part number:PZTA64T1
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| Part: | PZTA64T1 |
| Category: | Discrete => Transistors => Bipolar => Darlington => PNP |
| Description: | PNP Silicon Darlington Transistor Surface Mount |
| Company: | Motorola Semiconductor Products |
| Datasheet: | Download PZTA64T1 datasheet File size : 174 kB |
| Request For quote: | Find where to buy PZTA64T1
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Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by PZTA64T1/D
PNP Small Signal Darlington Transistor
This PNP small-signal darlington transistor is designed for use in preamplifiers input applications or wherever it is necessary to have a high input impedance. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. · High fT : 125 MHz Minimum · The SOT-223 Package can be soldered using wave or reflow. · SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering eliminating the possibility of damage to the die. · Available in 12 mm Tape and Reel Use PZTA64T1 to order the 7 inch/1000 unit reel. Use PZTA64T3 to order the 13 inch/4000 unit reel. · NPN Complement is PZTA14T1
COLLECTOR 2, 4
PZTA64T1
Motorola Preferred Device
SOT-223 PACKAGE PNP SILICON DARLINGTON TRANSISTOR SURFACE MOUNT
4 1
BASE 1
2 3
EMITTER 3
CASE 318E-04, STYLE 1 TO-261AA
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ TA = 25°C(1) Collector Current Operating and Storage Temperature Range Symbol VCES VCBO VEBO PD IC TJ, Tstg Value 30 30 10 1.5 500 65 to +150 Unit Vdc Vdc Vdc Watts mAdc °C
DEVICE MARKING
P2V
THERMAL CHARACTERISTICS
Thermal Resistance from Junction to Ambient (surface mounted) Maximum Temperature for Soldering Purposes Time in Solder Bath RJA TL 83.3 260 10 °C/W °C Sec
1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 4
Motorola SmallSignal © Motorola, Inc. 1996
Transistors, FETs and Diodes Device Data
1
PZTA64T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 100 µAdc, VBE = 0) Collector-Base Breakdown Voltage (IC = 100 µA, IE = 0) Emitter-Base Breakdown Voltage (IE = 100 µA, IC = 0) Emitter-Base Cutoff Current (VBE = 10 Vdc, IC = 0) Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CES V(BR)CBO V(BR)EBO IEBO ICBO 30 30 10 -- -- -- -- -- 0.1 0.1 Vdc Vdc Vdc µAdc µAdc
ON CHARACTERISTICS(2)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) Base-Emitter On-Voltage (VCE = 5.0 Vdc, IC = 100 mAdc) hFE 10,000 20,000 VCE(sat) VBE(on) -- -- -- -- 1.5 2.0 Vdc Vdc --
DYNAMIC CHARACTERISTICS
Current-Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. fT 125 -- MHz
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
PZTA64T1
200 hFE, DC CURRENT GAIN (X1.0 K) 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 25°C VCE = 2.0 V 5.0 V TA = 125°C
10 V
55°C
Figure 1. DC Current Gain
|h FE |, HIGH FREQUENCY CURRENT GAIN
10 VCE = 5.0 V f = 100 MHz TA = 25°C
2.0 TA = 25°C VBE(sat) @ IC/IB = 100
2.0 1.0
V, VOLTAGE (VOLTS)
4.0 3.0
1.6
1.2 VBE(on) @ VCE = 5.0 V 0.8 VCE(sat) @ IC/IB = 1000 IC/IB = 100 0.4
0.4 0.2 0.1 1.0
2.0
5.0
10 20 50 100 200 IC, COLLECTOR CURRENT (mA)
500
1K
0 0.3 0.5
1.0
2.0 3.0 5.0 10 20 30 50 100 IC, COLLECTOR CURRENT (mA)
200 300
Figure 2. High Frequency Current Gain
Figure 3. "On" Voltage
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.1 0.2 0.5 IC = 10 mA 50 mA 100 mA 175 mA TA = 25°C 300 mA
1.0 2.0 5.0 10 20 50 100 200 500 1K 2K IB, BASE CURRENT (µA)
5K 10K
Figure 4. Collector Saturation Region
Motorola SmallSignal Transistors, FETs and Diodes Device Data
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