|
Details, datasheet, quote on part number:N01L0850C2AS-70I
| |
Datasheet text preview:
NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com
N01L 0850C2A
1Mb Ultra-Low Power Asynchronous CMOS SRAM
128Kx8 bit Overview
The N01L0850C2A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 131,072 words by 8 bits. The device is designed and fabricated using NanoAmp's advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. The N01L0850C2A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in a JEDEC standard 32-pin SOP package.
Features
· Wide Power Supply Range 4.5 to 5.5 Volts Very low standby current 0.8µA at 5.0V (Typical) · Very low operating current 10.0mA at 5.0V and 1µs (Typical) · Simple memory control Dual Chip Enables (CE1and CE2) Output Enable (OE) for memory expansion · Low voltage data retention Vcc = 1.5V · Very fast output enable access time 40ns OE access time · Automatic power down to standby mode · TTL compatible three-state output driver
Product Family
Part Number Package Type 32 - SOP I Operating Temperature -40oC to +85oC Power Supply (Vcc) 4.5V - 5.5V Speed Standby Operating Current (ISB), Current (Icc), Typical Typical 0.8 µA 10 mA @ 1MHz
N01L0850C2AS-70I
70ns
Pin Configuration
NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 Vss 1 2 3 4 N01L0850C2A 5 SOP 6 7 8 9 10 11 12 13 14 15 16 V cc A 15 CE 2 WE A 13 A8 A9 A11 OE A 10 CE 1 I/O7 I/O6 I/O5 I/O4 I/O3
Pin Descriptions
Pin Name 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A0-A16 WE CE1, CE2 OE I/O0-I/O7 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Data Inputs/Outputs P ower G r ound Not Connected
Stock No. 23172-02 11/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1
NanoAmp Solutions, Inc. Functional Block Diagram
N01L 0850C2A
Address Inputs A0 - A16
Address Decode Logic
128K x 8 bit RAM Array
Input/ Output Mux and Buffers
I/O0 - I/O7
CE1 CE2 WE OE
Control Logic
Functional Description
CE1 H X L L L CE2 X L H H H WE X X L H H OE X X X2 L H I/O0 - I/O7 High Z High Z Data In Data Out High Z MODE Standby1 Standby1 Write2 Read Active POWER Standby Standby Active Active Active
1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item Input Capacitance I/O Capacitance Symbol CIN CI/O Test Condition VIN = 0V, f = 1 MHz, TA = 25oC VIN = 0V, f = 1 MHz, TA = 25oC Min Max 6 8 Unit pF pF
1. These parameters are verified in device characterization and are not 100% tested
Stock No. 23172-02 11/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2
NanoAmp Solutions, Inc.
N01L 0850C2A
Absolute Maximum Ratings1
Item Voltage on any pin relative to VSS Power Dissipation Storage Temperature Operating Temperature Soldering Temperature and Time Symbol VIN,OUT PD TSTG TA TSOLDER Rating 0.5 to VCC+0.5 600 40 to 125 -40 to +85 240oC, 10sec(Lead only) Unit V mW
oC oC oC
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item Supply Voltage Data Retention Voltage Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Input Leakage Current Output Leakage Current Read/Write Operating Supply Current @ 70 nS Cycle Time2 Maximum Standby Current
2
Symbol VCC VDR VIH VIL VOH VOL ILI ILO ICC2
Test Conditions
Min. 4.5
Typ1 5.0
Max 5.5 VCC+0.2 0.8 0.4 1 1 35.0
Unit V V V V V V µA µA mA
Chip Disabled2
1.5 2.2 0.5
IOH = 1mA IOL = -2mA VIN = 0 to VCC OE = VIH or Chip Disabled VCC=5.0 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VIN Vcc-0.2V or 0.2V Chip Disabled tA= 85oC, VCC = 3.6 V VIN Vcc-0.2V or 0.2V Chip Disabled, tA= 85oC
2.4
ISB
0.8
5
µA
Maximum Data Retention Current2
IDR
0.5
µA
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested. 2. This device assumes a standby mode if the chip is disabled (CE1 high or CE2 low). In order to achieve low standby current all inputs must be within 0.2 volts of either VCC or VSS.
Stock No. 23172-02 11/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
3
|
|
