|
Details, datasheet, quote on part number:N01M083WL1AX-XXX
| |
Datasheet text preview:
NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com
N01M083WL1
1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
128Kx8 bit Overview
The N01M083WL1A is an integrated memory device intended for non life-support (Class 1 or 2) medical applications. This device comprises a 1 Mbit Static Random Access Memory organized as 131,072 words by 8 bits. The device is designed and fabricated using NanoAmp's advanced CMOS technology with reliability inhancements for medical users. The base design is the same as NanoAmp's N01M0818L2A, which has further reliability processing for life-support (Class 3) medical applications. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. The N01M083WL1A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 256Kb x 8 SRAMs
Features
· Single Wide Power Supply Range 2.3 to 3.6 Volts · Very low standby current 2.0µA at 3.0V (Typical) · Very low operating current 2.0mA at 3.0V and 1µs (Typical) · Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical) · Simple memory control Dual Chip Enables (CE1and CE2) Output Enable (OE) for memory expansion · Low voltage data retention Vcc = 1.8V · Very fast output enable access time 30ns OE access time · Automatic power down to standby mode · Special Processing to reduce Soft Error Rate (SER)
Product Family
Part Number N01M083WL1AN Package Type 32 - STSOP I Operating Temperature Power Supply (Vcc) Speed Standby Current (ISB), Max 20 µA Operating Current (Icc), Max 3 mA @ 1MHz
70ns @ 2.7V -40oC to +85oC 2.3-3.6 Volts 100ns @ 2.3V N01M083WL1AD Known Good Die
Pin Configuration
A11 A9 A8 A13 WE CE 2 A15 V CC NC A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE 1 I/O7 I/O6 I/O5 I/O4 I/O3 VSS I/O2 I/O1 I/O0 A0 A1 A2 A3
Pin Descriptions
Pin Name A0-A16 WE CE1, CE2 OE I/O0-I/O7 VC C VSS Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Data Inputs/Outputs Power Groun d
N01M083WL1A STSOP
Stock No. 23206-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1
NanoAmp Solutions, Inc. Functional Block Diagram
N01M083WL1A
Address Inputs A0 - A3
Word Address Decode Logic Word Mux Input/ Output Mux and Buffers
Address Inputs A4 - A16
Page Address Decode Logic
16K Page x 16 word x 8 bit RAM Array
I/O0 - I/O7
CE1 CE2 WE OE
Control Logic
Functional Description
CE1 H X L L L CE2 X L H H H WE X X L H H OE X X X2 L H I/O0 - I/O7 High Z High Z Data In Data Out High Z MODE Standby1 Standby1 Write2 Read Active POWER Standby Standby Active Active Active
1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item Input Capacitance I/O Capacitance Symbol CIN CI/O Test Condition VIN = 0V, f = 1 MHz, TA = 25oC Min Max 8 8 Unit pF pF
VIN = 0V, f = 1 MHz, TA = 25oC
1. These parameters are verified in device characterization and are not 100% tested
Stock No. 23206-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2
NanoAmp Solutions, Inc. Absolute Maximum Ratings1
Item Voltage on any pin relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Soldering Temperature and Time Symbol VIN,OUT VCC PD TSTG TA TSOLDER
N01M083WL1A
Rating 0.3 to VCC+0.3 0.3 to 4.5 500 40 to 125 -40 to +85 240oC, 10sec(Lead only) Unit V V mW
o
C
oC oC
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item Supply Voltage Data Retention Voltage Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Input Leakage Current Output Leakage Current Read/Write Operating Supply Current @ 1 µs Cycle Time2 Read/Write Operating Supply Current @ 70 ns Cycle Time2 Page Mode Operating Supply Current @ 70 ns Cycle Time2 (Refer to Power Savings with Page Mode Operation diagram) Maximum Standby Current
3
Symbol VCC VDR VIH VIL VOH VOL ILI ILO ICC1 ICC2
Test Conditions
Min. 2.3
Typ1
Max 3.6 VCC+0.3 0.6 0.2 0.5 0.5
Unit V V V V V V µA µA mA mA
Chip Disabled3
1.8 VCC-0.6 0.3
IOH = 0.2mA IOL = -0.2mA VIN = 0 to VCC OE = VIH or Chip Disabled VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VCC=2.3 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VIN = VCC or 0V Chip Disabled tA= 85oC, VCC = 2.3 V VCC = 1.8V, VIN = VCC or 0 Chip Disabled, tA= 85oC
VCC0.2
1.5 10.0
2.0 12.0
ICC3
4.0
mA
I SB1
2.0
20.0
µA
Maximum Data Retention Current3
IDR
10.0
µA
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested. 2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive output capacitance expected in the actual system.
Stock No. 23206-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
3
|
|
