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Details, datasheet, quote on part number:N02C1630E1A
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| Part: | N02C1630E1A |
| Category: | Memory => Multi Chip Memory => Flash SRAM Combos |
| Description: | 16Mb Flash, 2Mb SRAM, , 1Mb X 16 Flash, 128Kb X 16 SRAM, 2.7 - 3.3, 90, Enh. Boot Block Flash, Dual ce SRAM, 66-BGA, |
| Company: | NanoAmp Solutions, Inc. |
| Datasheet: | Download N02C1630E1A datasheet File size : 363 kB |
| Request For quote: | Find where to buy N02C1630E1A
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Datasheet text preview:
NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com
N02C1630E1AM
Advance Information
N02C1630E1AM
Low Voltage, Extended Temperature
FLASH AND SRAM COMBO MEMORY
FEATURES
· Organization: · 1,048K x 16 (Flash) 128K x 16 (SRAM) Basic configuration: Flash Thirty-nine erase blocks Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks SRAM 2Mb SRAM for data storage 128K-words F_VCC, F_VPP, S_VCC voltages 2.7V (MIN)/3.3V (MAX) F_VCC read voltage 2.7V (MIN)/3.3V (MAX) S_VCC read voltage 1.8V (TYP) F_VPP (in-system PROGRAM/ERASE) 12V ±5% (HV) F_VPP (production programming compatibility) 1.0V (MIN) S_VCC (SRAM data retention) Asynchronous access time Flash access time: 90ns @ 2.7V F_VCC SRAM access time: 85ns @ 2.7V S_VCC Low power consumption Enhanced WRITE/ERASE suspend option Read/Write SRAM during program/erase of Flash 128-bit chip OTP protection register for security purposes Cross-compatible command set support PROGRAM/ERASE cycles 100,000 WRITE/ERASE cycles per block
BALL ASSIGNMENT 66-Ball FBGA (Top View)
1 A B C D E F G H
NC
2
NC
3
NC
4
A11
5
A15
6
A14
7
A13
8
A12
9
F _Vss
10
NC
11
NC
12
NC
A16
A8
A10
A9
D Q15
S_W E#
D Q 14
D Q7
F_WE #
NC
D Q13
D Q6
D Q4
D Q5
·
S_Vss
F _R P#
D Q12
S_C E2
S_Vcc
F _Vcc
F_WP #
F _Vp p
A19
D Q11
D Q10
D Q2
D Q3
S_L B#
S_U B#
S_OE #
D Q9
D Q8
D Q0
D Q1
A18
A17
A7
A6
A3
A2
A1
S_C E1 #
· · · · · · ·
NC
NC
NC
A5
A4
A0
F_C E#
F_Vss
F _OE#
NC
NC
NC
OPTIONS
· Timing 90ns · Boot Block Top Bottom · Operating Temperature Range Industrial Temperature (-40oC to +85oC)
MARKING
-9 T B I
Part Number Example:
N02C1630E1AM-9TI
Stock No. 23134-E 9/02
1
Advance - Subject to Change without Notice
N02C1630E1AM NanoAmp Solutions, Inc.
GENERAL DESCRIPTION
The N02C1630E1AM, a combination of Flash and S R A M memory, provides a compact, low-power solution for systems where PCB real estate is at a premium. The device contains a nonvolatile, electrically block-erasable (flash), programmable, read-only memory containing 16,777,216 bits organized as 1,048,576 words (16 bits). The device also provides soft protection for blocks by configuring soft protection registers with dedicated command sequences. A 128-bit (OTP )one time programmable register is provided. The embedded WORD WRITE and BLOCK ERASE functions are fully automated by an on-chip write state machine (WSM). The WSM simplifies these operations and relieves the system processor of secondary tasks. An on-chip status register, can be used to monitor the WSM status to determine the progress of a PROGRAM/ERASE command. The erase/program suspend functionality allows compatibility with existing EEPROM emulation software packages. The device takes advantage of a dedicated power source for the Flash device (F_VCC) and a dedicated power source for the SRAM device (S_VCC), both at 2.7V3.3V for optimized power consumption and improved noise immunity. The separate S_VCC pin for the SRAM provides the data retention capability whenever required. The data retention S_VCC is specified as low as 1.0V. The device supports two VPP voltages; in-circuit VPP of 1.65V3.3V and production compatibility of 12V ±5%. The 12V ±5% VPP is supported for a maximum of 100 cycles and 10 cumulative hours. The N02C1630E1AM contains an asynchronous 2Mb Advance
SRAM organized as 128K-words by 16 bits. This device is fabricated using an advanced CMOS process and highspeed/ultra-low-power circuit technology. The N02C1630E1AM is packaged in a 66-ball FBGA package with 0.80mm pitch.
Stock No. 23134-E 9/02
2
Advance - Subject to Change without Notice
N02C1630E1AM NanoAmp Solutions, Inc.
PART NUMBERING INFORMATION
NanoAmp's low-power devices are available with several different combinations of features. Valid combinations of features and their corresponding part numbers are listed in Table 1. Advance
Part Number Chart N 02 C 16 30 E1 A M - 9T I NanoAmp Solutions SRAM Density Flash/SRAM Combo I/O Organization Operating Voltage Operating Temperature Performance & Boot Block Package Type Die Revision Flash Density
Table 1 Valid Part Number Combinations
ACCESS T I M E (ns) 90 90 BOOT BLOCK Bottom Top OPERATING TEMPERATURE RANGE -40oC to +85oC -40oC to +85oC
P A R T NUMBER N02C1630E1AM-9BI N02C1630E1AM-9TI
Stock No. 23134-E 9/02
3
Advance - Subject to Change without Notice
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