Details, datasheet, quote on part number: N32T163WD1AZ
PartN32T163WD1AZ
CategoryMemory => SRAM => Low Power => 1T-based Pseudo SRAMs
Title1T-based Pseudo SRAMs
Description32Mb, , 2Mb X 16, 2.3 - 3.3, 70, Deep Sleep Inactive, 48-BGA,
CompanyNanoAmp Solutions, Inc.
DatasheetDownload N32T163WD1AZ datasheet
  

 

Features, Applications

NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com

32Mb Ultra-Low Power Asynchronous CMOS Pseudo SRAM

The is an integrated memory device containing a 32Mbit SRAM built using a self-refresh DRAM array organized as 2,097,152 words by 16 bits. The device is designed and fabricated using NanoAmp's advanced CMOS technology to provide both high-speed performance and ultra-low power. It is designed to be identical in operation and interface to standard 6T SRAMS. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N32T163WA1(D1)A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device includes a power-down feature to automatically enter standby mode as well as several other power saving modes: a deep sleep mode where data is not retained in the array and partial array refresh mode where data is retained in a portion of the array. Both these modes reduce standby current drain. The VFBGA package offers an extremely thin, low-profile size for today's space conscience applications. The device can operate over a very wide temperature range to +85oC and is available in a JEDEC standard BGA package compatible with other standard x 16 SRAMs.

Features

Dual voltage for Optimum Performance: Vccq - 1.7 Volts to Vcc to 3.3 Volts Very low standby current 40A V (Typical) Very low operating current at 1s (Typical) Simple memory control Byte control for independent byte operation Output Enable (OE) for memory expansion Very fast output enable access time 35ns OE access time Automatic power down to standby mode TTL compatible three-state output driver

Part Number N32T163WA1AZ N32T163WD1AZ Package Type 48 - BGA Operating Temperature to +85oC Power Supply - 3.3V (VCC) 1.7V - Vcc(VCCQ) Speed 70ns 85ns Standby Operating Current (ISB), Current (Icc), Max @ 1MHz

Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Byte Enable Inputs Deep Sleep Input Data Inputs/Outputs Core Power I/O Power Ground I/O Ground To be left floating or tied to VSS

Stock No. 23202-03 12/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

NanoAmp Solutions, Inc. Functional Block Diagram
- I/O151 High Z High Z Data In Data Out High Z High Z
MODE Standby2 Standby Write Read Active Deep Sleep

1. When UB and LB are in select mode (low), - I/O15 are affected as shown. When LB only is in the select mode only - I/O7 are affected as shown. When is in the select mode only - I/O15 are affected as shown. 2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.

Item Input Capacitance I/O Capacitance Symbol CIN CI/O Test Condition VIN = 1 MHz, = 25oC VIN = 1 MHz, = 25oC Min Max 6 8 Unit pF

1. These parameters are verified in device characterization and are not 100% tested

Item Voltage on any pin relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Soldering Temperature and Time Symbol VIN,OUT VCC PD TSTG TA TSOLDER

1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Operating Characteristics (Over Specified Temperature Range)

Item Supply Voltage Supply Voltage for I/O Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Input Leakage Current Output Leakage Current Read/Write Operating Supply Current 1 s Cycle Time2 Read/Write Operating Supply Current 70 ns Cycle Time2 Read/Write Operating Supply Current 85 ns Cycle Time2 Maximum Standby Current3 Symbol VCC VCCQ VIH VIL VOH VOL ILI ILO ICC3 ISB1 IOH = -0.1mA IOL = 0.1mA VIN 0 to VCC OE = VIH or Chip Disabled VCC= Max, VIN=CMOS levelsChip Enabled, IOUT = 0 VCC= Max, VIN=CMOS levels Chip Enabled, IOUT = 0 VCC= Max, VIN=CMOS levels Chip Enabled, IOUT = 0 VCC= Max, VIN=CMOS levels Chip Disabled -1 Test Conditions Min. Typ1 2.5 Max 3.3 Vcc VCCQ+0.2 0.4 Unit mA A

1. Typical values are measured at Vcc=Vcc Typ., TA=25C and not 100% tested. 2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive output capacitance expected in the actual system. 3. This device assumes a standby mode if the chip is disabled (either CE high or both UB and LB high). In order to achieve low standby current all inputs must be within 0.2V of either VCC or VSS.


 

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