Details, datasheet, quote on part number: N36N183WF1A
PartN36N183WF1A
CategoryMemory => SRAM => Sync. SRAM
DescriptionFtram, Flow-Thru, 18, 2.5, 3.3, 67 - 150, 6.0 - 11.0, 100-TQFP,
CompanyNanoAmp Solutions, Inc.
DatasheetDownload N36N183WF1A datasheet
  

 

Features, Applications

NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com

36Mb High Speed Synchronous SRAMs with Fast Bus Turn-aroundTM FTRAMTM Architecture
Features

High performance synchronous operation Cycle times to 300MHz Access times as fast as 2.3nS Full 100% bus utilization Fully compatible with other no bus turnaround SRAMs Single device supports power supply or 2.5V Separate I/O power supply or 2.5V User selectable pipeline and flow-thru operating modes for BGA devices Individual byte write operation Three chip enables Simple depth expansion ZZ mode for low power sleep mode Mode pin for setting interleave or linear burst mode of operation JTAG Boundary Scan (BGA only) JEDEC standard packages: 100-pin TQFP, 165-ball FPBGA, 119-ball PBGA and 209ball PBGA (x72) retained. User configurable operation in pipeline or flow-thru modes is allowed through control of the FT input for BGA devices. Either pipeline or flowthru devices are available in TQFP packages. The devices are fabricated using NanoAmp's advanced CMOS process and high-speed/ultra low-power circuit technology. This 36Mb family is ideal for networking and communication systems where high-density, high-performance memory elements are required. The architecture allows the data bus to be fully utilized when moving data into and out of the SRAM.

These 36Mb high performance synchronous SRAMs form a family of device options for those demanding high performance. The FTRAMTM family of devices is designed to operate without the need of NOP or deselect clock cycles when transitioning from read to write cycles and thereby allowing the use of all available bandwidth. The high speed devices are fully compatible with other no bus turn-around SRAMs such as NoBLTM, ZBTTM and NtRAMTM devices. The memory devices contain 36Mb of memory cells organized 36 (N36N36) and 72 (N36N72). The devices operate in a synchronous manner with control signals, addresses and data inputs synchronized and captured at the rising edge of clock for ease of use. An asynchronous OE is available for disabling the outputs at any time. An asynchronous ZZ signal can be used to put the device into sleep mode with all data

FtRAM is a trademark of NanoAmp Solutions, Inc. NoBL is a trademark of Cycpress Semiconductor Corpopation ZBT is a trademark of Integrated Device Technology NtRAM is a trademark of Samsung Electronics Corporation

Options

Organization x 72 Operating Mode P1 (only for TQFP) F1 (only for TQFP) PF (for all BGA) Package 100-pin TQFP 119-ball PBGA 165-ball FPBGA 209-ball PBGA N36N363W N36N723W Pipeline Flow-Thru Pipeline or Flow-Thru

This is an advance datasheet and subject to change without notice. NanoAmp Proprietary and Confidential

DQcP DQc VDDQ VSS DQc VSS VDDQ DQc NC VDD NC VSS DQd VDDQ VSS DQd VSS VDDQ DQd DQdP
DQbP DQb VDDQ VSS DQb VSS VDDQ DQb VSS NC VDD ZZ DQa VDDQ VSS DQa VSS VDDQ DQa DQaP

VDDQ NC DQb NC VDDQ NC DQb VDDQ NC DQb VDDQ DQb NC VDDQ A NC DQb NC DQb NC VDD DQb NC DQb NC DQbP A TMS VSS BWb VSS NC VSS LBO A TDI 4 A ADV VDD A WE VDD CLK NC CKE A1 A0 VDD A TCK VSS NC VSS BWa VSS FT A TDO CE3 A DQaP NC DQa NC DQa VDD NC DQa NC DQa NC 7 VDDQ NC DQa VDDQ DQa NC VDDQ DQa NC VDDQ NC DQa NC ZZ VDDQ

VDDQ NC DQc VDDQ DQc VDDQ DQd VDDQ DQd NC VDDQ CE2 A DQcP DQc VDD DQd DQdP A NC TMS VSS BWc VSS NC VSS BWd VSS LBO A TDI 4 A ADV VDD A WE VDD CLK NC CKE A1 A0 VDD A TCK VSS BWb VSS NC VSS BWa VSS FT A TDO CE3 A DQbP DQb VDD DQa DQaP NC 7 VDDQ NC DQb VDDQ DQb VDDQ DQa VDDQ DQa NC ZZ VDDQ


 

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