Details, datasheet, quote on part number: N36S183WPFA
PartN36S183WPFA
CategoryMemory => SRAM => Sync. SRAM
DescriptionSynch, Pipeline/Flow-Thru, 18, 2.5, 3.3, 133 - 300, 2.3 - 4.0, 119-PBGA, 165-FPBGA,
CompanyNanoAmp Solutions, Inc.
DatasheetDownload N36S183WPFA datasheet
  

 

Features, Applications

NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com

Features

High performance synchronous operation Cycle times to 300MHz Access times as fast as 2.3nS Single device supports power supply or 2.5V Separate I/O power supply or 2.5V User selectable pipeline and flow-thru operating modes for BGA devices Individual byte write operation Three chip enables Simple depth expansion ZZ mode for low power sleep mode Mode pin for setting interleave or linear burst mode of operation JTAG Boundary Scan (BGA only) JEDEC standard packages: 100-pin TQFP, 165-ball FPBGA, 119-ball PBGA and 209ball PBGA (x72) storage and networking memory. This 36Mb family is ideal for networking and communication systems where high-density, high-performance memory elements are required.

These 36Mb high performance synchronous SRAMs form a family of device options for those demanding high performance. The memory devices contain 36Mb of memory cells organized 36 (N36N36) and 72 (N36N72). The devices operate in a synchronous manner with control signals, addresses and data inputs synchronized and captured at the rising edge of clock for ease of use. An asynchronous OE is available for disabling the outputs at any time. An asynchronous ZZ signal can be used to put the device into sleep mode with all data retained. User configurable operation in pipeline or flow-thru modes is allowed through control of the FT input for BGA devices. Either pipeline or flowthru devices are available in TQFP packages. The devices are fabricated using NanoAmp's advanced CMOS process and high-speed/ultra low-power circuit technology. These 36Mb devices are the type of SRAMs originally developed as L2 cache memories for high performance CPUs. They now can be used in applications ranging from processor caches, DSP

Options

Organization 72 N36S72 Operating Mode (for TQFP only) P1 (only for TQFP) SCD Pipeline P2 (only for TQFP) DCD Pipeline F1 (only for TQFP) Flow-Thru PF (for all BGA) Pipeline or Flow-Thru Package 100-pin TQFP Q 119-ball PBGA G 165-ball FPBGA F 209-ball PBGA X

This is an advance datasheet and subject to change without notice. NanoAmp Proprietary and Confidential

DQcP DQc VDDQ VSS DQc VSS VDDQ DQc NC VDD NC VSS DQd VDDQ VSS DQd VSS VDDQ DQd DQdP
DQbP DQb VDDQ VSS DQb VSS VDDQ DQb VSS NC VDD ZZ DQa VDDQ VSS DQa VSS VDDQ DQa DQaP

VDDQ NC DQb NC VDDQ NC DQb VDDQ NC DQb VDDQ DQb NC VDDQ NC DQb NC DQb NC VDD DQb NC DQb NC DQbP A TMS VSS BWb VSS NC VSS LBO A TDI 4 ADSP ADSC VDD CE1 OE ADV GW VDD CLK A1 A0 VDD A TCK VSS NC VSS BWa VSS FT A TDO DQaP NC DQa NC DQa VDD NC DQa NC DQa NC 7 VDDQ NC DQa VDDQ DQa NC VDDQ DQa NC VDDQ NC DQa NC ZZ VDDQ

VDDQ NC DQc VDDQ DQc VDDQ DQd VDDQ DQd NC VDDQ DQcP DQc VDD DQd DQdP A TMS VSS BWc VSS NC VSS BWd VSS LBO A TDI 4 ADSP ADSC VDD CE1 OE ADV GW VDD CLK A1 A0 VDD A TCK VSS BWb VSS NC VSS BWa VSS FT A TDO DQbP DQb VDD DQa DQaP NC 7 VDDQ NC DQb VDDQ DQb VDDQ DQa VDDQ DQa NC ZZ VDDQ


 

Related products with the same datasheet
N36S183WPFAF
N36S183WPFAG
Some Part number from the same manufacture NanoAmp Solutions, Inc.
N36S183WPFAF Synch, Pipeline/Flow-Thru, 18, 2.5, 3.3, 133 - 300, 2.3 - 4.0, 119-PBGA, 165-FPBGA,
N36S363WF1A Synch, Flow-Thru, 36, 2.5, 3.3, 67 - 150, 6.0 - 11.0, 100-TQFP,
N36S363WP1A Synch, Pipeline, 36, 2.5, 3.3, 133 - 300, 2.3 - 4.0, 100-TQFP,
N36S363WP2A Synch, Pipeline/dual Cycle Deselect, 36, 2.5, 3.3, 133 - 300, 2.3 - 4.0, 100-TQFP,
N36S363WPFA Synch, Pipeline/Flow-Thru, 36, 2.5, 3.3, 133 - 300, 2.3 - 4.0, 119-PBGA, 165-FPBGA,
N64T1618C1A 64Mb, , 4Mb X 16, 1.65 - 1.95, 60/70, Page Mode, 48-BGA,
N64T1618CBA 64Mb, , 4Mb X 16, 1.65 - 1.95, 60/70, Burst Mode, 54-BGA,
N16L163WC2C 16Mb Ultra-Low Power Asynchronous CMOS SRAMThe N16L163WC2C is an integrated memorydevice containing a 8Mbit Static Random AccessMemory organized as 1,048,576 words by 16 bits.The device is designed
N08L083WC2C 8Mb Ultra-Low Power Asynchronous CMOS SRAMThe N08L083WC2C is an integrated memorydevice containing a 8 Mbit Static Random AccessMemory organized as 1,048,576 words by 8 bits.The device is designed
NS3121 160 Nm GSM/GPRS Quad-Band CMOS Transceiver System-on-a-Chip With DigRF Interface160 nm GSM/GPRS Quad-Band CMOS Transceiver System-on-a-Chip with DigRF Interface
ESOT12LCC-1 Low Capacitance TVS Array In SOT-23-6 PackageESD Protection > 25 kilovolts250 Watts Peak Pulse Power per Line (tp=8/20s)Protects Two (2) Bidirectional LinesBidirectional ConfigurationLow Leakage
N04L1630C2B 4Mb Ultra-low Power Asynchronous CMOS SRAM 256K 16 bit
N02L163WC2AB2 2Mb Ultra-low Power Asynchronous CMOS SRAM
N04Q16YYC2B 4Mb Ultra-low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256k16 bit Power Saver Technology
N16D1633LPA 512K 16 Bits 2 Banks Low Power Synchronous DRAM
N02M0818L1AD 2Mb Ultra-low Power Asynchronous Medical CMOS SRAM 256kx8 bit
N16L163WC2CT1-55IL 16Mb Ultra-low Power Asynchronous CMOS SRAM 1024k 16 bit
N01L0818L1AD-85I 1Mb Ultra-low Power Asynchronous Medical CMOS SRAM 128kx8 bit
N01L1618N1AB-70I 1Mb Ultra-low Power Asynchronous CMOS SRAM
N02L083WC2AN2 2Mb Ultra-low Power Asynchronous CMOS SRAM 256K x 8 bit
N08L1618C2AB2 8Mb Ultra-low Power Asynchronous CMOS SRAM 512K 16bit
Same catergory

AS8S128K32 : 128k X 32 SRAM SRAM Memory Array. Access times of and 45 ns Built in decoupling caps for low noise operation Organized 128K x32; User configured 512K x8 Operation with single 5 volt supply Low power CMOS TTL Compatible Inputs and Outputs 2V Data Retention, Low power standby OPTIONS Timing 35ns 45ns Package Ceramic Quad Flatpack Ceramic Quad Flatpack Pin Grid Array -8 Series Pin Grid.

DP3S1MX8MY5 : SRAM, 8 Megabits. 8 Megabit 3.3 Volt CMOS SRAM 16 Megabit 3.3 Volt CMOS SRAM : The LP-StackTM series is a family of interchangeable memory modules. The 4 Megabit SRAM is a member of this family which utilizes the new and innovative space saving TSOP technology. The modules are constructed with 8, 3.3 Volt SRAM's. The 4 Megabit based LP-StackTM modules have been designed.

HY62UF16201A : 128Kx16bit Full CMOS SRAM. 128K x16 bit 3.0V Super Low Power Full CMOS Slow SRAM Divide output load into two factors Dec.10. 2000 Final - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others Add the marking information Correct the PKG dimension(E1) Aug. 01. 2001 Add the dimension and the marking information of the 6x8 PKG size Separate the part number(HY62UF16201AF1) for the 6x8 PKG Aug.

HYMD532646L6 : 256 MB. 32Mx64 Bits Unbuffered DDR Sdram Dimm. Hynix HYMD532646(L)6-K/H/L series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 32Mx64 high-speed memory arrays. Hynix HYMD532646(L)6-K/H/L series consists of four 32Mx16 DDR SDRAM in 400mil TSOP II packages a 184pin glass-epoxy substrate. Hynix HMD532646(L)6-K/H/L series provide a high.

LC35256DT-10 : SRAM. Dual Control Pins: oe And ce 256K (32768word X 8bit) SRAM. The LC35256D, LC35256DM, and LC35256DT are 8-bit asynchronous silicon gate CMOS static RAMs. These devices use a 6-transistor full CMOS memory cell, and feature low-voltage operation, low current drain, and an ultralow standby current. They provide two control signal inputs: an OE input for highspeed access and a chip select (CE) input for device.

M374S0823ETS : Unbuffered DIMM. = M374S0823ETS 8Mx72 Sdram Dimm With Ecc Based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs With SPD ;; Density(MB) = 64 ;; Organization = 8Mx72 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 4K/64ms ;; Speed = 7C,7A,1H,1L ;; #of Pin = 168 ;; Power = C,l ;; Component Composition = (8Mx8)x9+EEPROM ;; Production Status = Eol ;; Comments.

M381L1713DTM : = M381L1713DTM 16M X 72 DDR Sdram 184pin Dimm Based on 16M X 8 ;; Density(MB) = 128 ;; Organization = 16Mx72 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 4K/64ms ;; Speed = B3 ;; #of Pin = 184 ;; Power = C,l ;; Component Composition = (16Mx8)x9 ;; Production Status = Eol ;; Comments = Ecc.

M41T11 : Serial RTC. 512 Bit (64B X 8) Serial Access Timekeeper SRAM. COUNTERS FOR SECONDS, MINUTES, HOURS, DAY, DATE, MONTH, YEARS and CENTURY YEAR 2000 COMPLIANT SOFTWARE CLOCK CALIBRATION AUTOMATIC SWITCH-OVER and DESELECT CIRCUITRY I2C BUS COMPATIBLE 56 BYTES of GENERAL PURPOSE RAM ULTRA-LOW BATTERY SUPPLY CURRENT OF 1A LOW OPERATING CURRENT OF 300A BATTERY OR SUPER-CAP BACK-UP BATTERY BACK-UP NOT RECOMMENDED FOR 3.0V.

MB84VD21083 : 16m ( X8/x16 ) Flash Memory & 2m ( X8/x16 ) Static RAM. Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM Power supply voltage 3.6 V High performance 85 ns maximum access time Operating Temperature to +85 C Package 61-ball FBGA, 56-pin TSOP(I) Flash Memory Ordering Part No. VCCf, VCCs -0.3 V Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns) Simultaneous Read/Write operations.

MX23L51212 : 512M, 32MX16. Bit organization x 16 (word mode only) - 256 words/page - Total 128K pages Sequential access at 200ns cycle time in a page Asynchronous chip enable input (ALEH, ALEL) Access time - Read latency time 1000ns - Read cycle time - RD access time : 150ns Current - Operating 25mA(max.) - Address input 2mA(max.) - Standby : 40uA(max.) Supply voltage - 3.0V~3.6V.

THMY51E01C70 : Form = DIMM-168 Pin ;; Type = Unbuffered ;; Density (MB) = 512MB ;; Config. = 64Mx72 ;; Comp. = 32Mx8 ;; = PC100, PC133 ;; Date = 2001/06/12.

V54C365164VC : High Performance 166/143/125 MHZ 3.3V 4M X 16 Synchronous DRAM. V54C365164VC HIGH PERFORMANCE 166/143/125 MHz 3.3 VOLT X 16 SYNCHRONOUS DRAM 4 BANKS X 16 6 System Frequency (fCK) Clock Cycle Time (tCK3) Clock Access Time (tAC3) CAS Latency = 3 Clock Access Time (tAC2) CAS Latency = 2 Clock Access Time (tAC1) CAS Latency 1 166 MHz 13 ns I 4 banks x 16 organization I High speed data transfer rates to 166 MHz I Full.

W24256S : 32kx8, 256k, 5v, 70, l, Ll, S:sop. The is a normal speed, very low power CMOS static RAM organized 8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond's high performance CMOS technology. Low power consumption: Access time: 70 nS (max.) Active :300 mW Standby :250 W Single 5V power supply Fully static operation All inputs and outputs directly.

CY7C1418JV18 : 36-Mbit DDR-II SRAM 2-Word Burst Architecture 36-Mbit DDR-II SRAM 2-Word Burst Architecture.

AS8C161831-QC166N : 1M X 18 ZBT SRAM, 3.5 ns, PQFP100. s: Memory Category: SRAM Chip ; Density: 18874 kbits ; Number of Words: 1000 k ; Bits per Word: 18 bits ; Package Type: TQFP, 14 X 20 MM, LEAD FREE, PLASTIC, MO-135DJ, TQFP-100 ; Pins: 100 ; Logic Family: CMOS ; Supply Voltage: 2.5V ; Access Time: 3.5 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).

CY22E016L-SZ25CT : 2K X 8 NON-VOLATILE SRAM, 25 ns, PDSO28. s: Memory Category: NVRAM, NVSRAM, SRAM Chip ; Density: 16 kbits ; Number of Words: 2 k ; Bits per Word: 8 bits ; Package Type: SOIC, 0.300 INCH, ROHS COMPLIANT, MO-119, SOIC-28 ; Pins: 28 ; Logic Family: CMOS ; Supply Voltage: 5V ; Access Time: 25 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).

HMT112R7BFR8A-G7 : 128M X 72 DDR DRAM, DMA240. s: Memory Category: DRAM Chip ; Density: 9663676 kbits ; Number of Words: 128000 k ; Bits per Word: 72 bits ; Package Type: ROHS COMPLIANT, DIMM-240 ; Pins: 240 ; Supply Voltage: 1.35 ; Operating Temperature: 0 to 85 C (32 to 185 F).

MT9JDF25672AZ-1G1XX : 2G X 72 DDR DRAM MODULE, DMA240. s: Memory Category: DRAM Chip ; Density: 154618823 kbits ; Number of Words: 2000000 k ; Bits per Word: 72 bits ; Package Type: HALOGENFREE, MO-269, UDIMM-240 ; Pins: 240 ; Logic Family: CMOS ; Supply Voltage: 1.35 ; Operating Temperature: 0 to 70 C (32 to 158 F).

W948D2FBJX5I : 4M X 32 DDR DRAM, 5 ns, PBGA90. s: Memory Category: DRAM Chip ; Density: 134218 kbits ; Number of Words: 4000 k ; Bits per Word: 32 bits ; Package Type: 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90 ; Pins: 90 ; Supply Voltage: 1.8V ; Access Time: 5 ns ; Operating Temperature: -40 to 85 C (-40 to 185 F).

 
0-C     D-L     M-R     S-Z