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Part: LF347BN
Category:
Analog & Mixed-Signal Processing
-> Amplifiers
-> Operational Amplifiers
-> General Purpose
Description: LF347 - Wide Bandwidth Quad JFET Input Operational Amplifiers, Package: Mdip, Pin Nb=14
Company: National Semiconductor Corporation
Datasheet: Download LF347BN datasheet File size : 82 kB
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Datasheet text preview:
LF147/LF347 Wide Bandwidth Quad JFET Input Operational Amplifiers
August 2000
LF147/LF347 Wide Bandwidth Quad JFET Input Operational Amplifiers
General Description
The LF147 is a low cost, high speed quad JFET input operational amplifier with an internally trimmed input offset voltage (BI-FET IITM technology). The device requires a low supply current and yet maintains a large gain bandwidth product and a fast slew rate. In addition, well matched high voltage JFET input devices provide very low input bias and offset currents. The LF147 is pin compatible with the standard LM148. This feature allows designers to immediately upgrade the overall performance of existing LF148 and LM124 designs. The LF147 may be used in applications such as high speed integrators, fast D/A converters, sample-and-hold circuits and many other circuits requiring low input offset voltage, low input bias current, high input impedance, high slew rate and wide bandwidth. The device has low noise and offset voltage drift.
Features
n n n n n n n n n n Internally trimmed offset voltage: Low input bias current: Low input noise current: Wide gain bandwidth: High slew rate: Low supply current: High input impedance: Low total harmonic distortion: Low 1/f noise corner: Fast settling time to 0.01%: 5 mV max 50 pA 0.01 pA/Hz 4 MHz 13 V/µs 7.2 mA 1012 0.02% 50 Hz 2 µs
Simplified Schematic
14
Connection Diagram
Dual-In-Line Package
/ Quad
DS005647-1 DS005647-13
Note 1: LF147 available as per JM38510/11906.
Top View Order Number LF147J, LF147J-SMD, LF347M, LF347BN, LF347N, LF147J/883, or JL147 BCA (Note 1) See NS Package Number J14A, M14A or N14A
BI-FET IITM is a trademark of National Semiconductor Corporation.
© 2000 National Semiconductor Corporation
DS005647
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LF147/LF347
Absolute Maximum Ratings (Note 2)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage Differential Input Voltage Input Voltage Range (Note 3) Output Short Circuit Duration (Note 4) Power Dissipation (Notes 5, 11) Tj max jA Ceramic DIP (J) Package Plastic DIP (N) Package Surface Mount Narrow (M) LF147 ± 22V ± 38V ± 19V Continuous 900 mW 150°C LF347B/LF347 ± 18V ± 30V ± 15V Continuous 1000 mW 150°C 70°C/W 75°C/W 100°C/W (Note 7)
Conditions Min VOS VOS/T IOS IB RIN AVOL Input Offset Voltage Average TC of Input Offset Voltage Input Offset Current Input Bias Current Input Resistance Large Signal Voltage Gain Tj = 25°C, (Notes 7, 8) Over Temperature Tj = 25°C, (Notes 7, 8) Over Temperature Tj = 25°C VS = ± 15V, TA = 25°C VO = ± 10V, RL = 2 k Over Temperature VO VCM CMRR PSRR IS Output Voltage Swing Input Common-Mode Voltage Range Common-Mode Rejection Ratio Supply Voltage Rejection Ratio Supply Current RS10 k (Note 9) 80 80 VS = ± 15V, RL = 10 k VS = ± 15V 25 25 50 1012 100 50 50 25 100 25 200 50 1012 100 50 25 100 4 200 8 RS = 10 k, TA = 25°C Over Temperature RS = 10 k 10 LF147 Typ 1 Max 5 8 10 Min LF347B Typ 3 Max 5 7
LF147 Surface Mount Wide (WM) Operating Temperature Range Storage Temperature Range Lead Temperature (Soldering, 10 sec.) Soldering Information Dual-In-Line Package Soldering (10 seconds) Small Outline Package Vapor Phase (60 seconds) Infrared (15 seconds) (Note 6)
LF347B/LF347 85°C/W (Note 6)
-65°CTA150°C 260°C 260°C
260°C 215°C 220°C
See AN-450 "Surface Mounting Methods and Their Effect on Product Reliability" for other methods of soldering surface mount devices. ESD Tolerance (Note 12) 900V
DC Electrical Characteristics
Symbol Parameter
LF347 Min Typ 5 10 25 50 1012 25 15 100 100 4 200 8 Max 10 13
Units mV mV µV/°C pA nA pA nA V/mV V/mV
± 12 ± 11
± 13.5
+15 -12 100 100 7.2 11
± 12 ± 11
80 80
± 13.5
+15 -12 100 100 7.2 11
± 12 ± 11
70 70
± 13.5
+15 -12 100 100 7.2 11
V V V dB dB mA
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2
LF147/LF347
AC Electrical Characteristics
Symbol Parameter Amplifier to Amplifier Coupling
(Note 7)
Conditions Min LF147 Typ -120 Max Min LF347B Typ -120 Max Min LF347 Typ -120 Max dB Units
TA = 25°C, f = 1 Hz-20 kHz (Input Referred)
SR GBW en
Slew Rate Gain-Bandwidth Product Equivalent Input Noise Voltage
VS = ± 15V, TA = 25°C VS = ± 15V, TA = 25°C TA = 25°C, RS = 100, f = 1000 Hz
8 2.2
13 4 20
8 2.2
13 4 20
8 2.2
13 4 20
V/µs MHz
in THD
Equivalent Input Noise Current Total Harmonic Distortion
Tj = 25°C, f = 1000 Hz AV = +10, RL = 10k, VO = 20 Vp-p, BW = 20 Hz-20 kHz
0.01
0.01
0.01
< 0.02
< 0.02
< 0.02
%
Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. Note 3: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage. Note 4: Any of the amplifier outputs can be shorted to ground indefinitely, however, more than one should not be simultaneously shorted as the maximum junction temperature will be exceeded. Note 5: For operating at elevated temperature, these devices must be derated based on a thermal resistance of jA. Note 6: The LF147 is available in the military temperature range -55°CTA125°C, while the LF347B and the LF347 are available in the commercial temperature range 0°CTA70°C. Junction temperature can rise to Tj max = 150°C. Note 7: Unless otherwise specified the specifications apply over the full temperature range and for VS = ± 20V for the LF147 and for VS = ± 15V for the LF347B/LF347. VOS, IB, and IOS are measured at VCM = 0. Note 8: The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction temperature, Tj. Due to limited production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient temperature as a result of internal power dissipation, PD. Tj = TA+jA PD where jA is the thermal resistance from junction to ambient. Use of a heat sink is recommended if input bias current is to be kept to a minimum. Note 9: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice from VS = ± 5V to ± 15V for the LF347 and LF347B and from VS = ± 20V to ± 5V for the LF147. Note 10: Refer to RETS147X for LF147D and LF147J military specifications. Note 11: Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the part to operate outside guaranteed limits. Note 12: Human body model, 1.5 k in series with 100 pF.
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LF147/LF347
Typical Performance Characteristics
Input Bias Current Input Bias Current Supply Current
DS005647-14
DS005647-15
DS005647-16
Positive Common-Mode Input Voltage Limit
Negative Common-Mode Input Voltage Limit
Positive Current Limit
DS005647-19 DS005647-17 DS005647-18
Negative Current Limit
Output Voltage Swing
Output Voltage Swing
DS005647-20
DS005647-21
DS005647-22
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4
LF147/LF347
Typical Performance Characteristics
Gain Bandwidth Bode Plot
(Continued) Slew Rate
DS005647-23
DS005647-24
DS005647-25
Distortion vs Frequency
Undistorted Output Voltage Swing
Open Loop Frequency Response
DS005647-26 DS005647-27 DS005647-28
Common-Mode Rejection Ratio
Power Supply Rejection Ratio
Equivalent Input Noise Voltage
DS005647-29
DS005647-30
DS005647-31
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