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Details, datasheet, quote on part number:LM113-1HDICE
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Datasheet text preview:
LM113 LM313 Reference Diode
December 1994
LM113 LM313 Reference Diode
General Description
The LM113 LM313 are temperature compensated low voltage reference diodes They feature extremely-tight regulation over a wide range of operating currents in addition to an unusually-low breakdown voltage and good temperature T stability he diodes are synthesized using transistors and resistors in a monolithic integrated circuit As such they have the same low noise and long term stability as modern IC op amps Further output voltage of the reference depends only on highly-predictable properties of components in the IC so F they can be manufactured and supplied to tight tolerances S
Y Y
Y
Dynamic impedance of 0 3X from 500 mA to 20 mA Temperature stability typically 1% overb55 C to 125 C range (LM113) 0 C to 70 C (LM313) Tight tolerance g5% g 2% or g 1%
The characteristics of this reference recommend it for use in bias-regulation circuitry in low-voltage power supplies or in battery powered equipment The fact that the breakdown voltage is equal to a physical property of silicon the energy-band gap voltage makes it useful for many temperature-compensation and temperature-measurement functions
eatures
Y
Low breakdown voltage 1 220V
chematic and Connection Diagrams
Metal Can Package
Order Number L LM113H LM113H 883 LM113-1H LM113-1H 883 M113-2H LM113-2H 883 o r LM313H See NS Package Number H02A
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Typical Applications
Low Voltage Regulator Level Detector for Photodiode
Solid tanTalum t
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C1995 National Semiconductor Corporation
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RRD-B30M115 Printed in U S A
Absolute Maximum Ratings
p If Military Aerospace specified devices are required lease contact the National Semiconductor Sales ( Office Distributors for availability and specifications Note 3) Power Dissipation (Note 1) Reverse Current Forward Current 100 mW 50 mA 50 mA Storage Temperature Range Lead Temperature (Soldering 10 seconds) Operating Temperature Range LM113 LM313
b 55 b 65
C to a 150 C
300 C
C to a 125 C 0 C to a 70 C
Electrical Characteristics (Note 2)
Parameter Reverse Breakdown Voltage LM113 LM313 LM113-1 LM113-2 Reverse Breakdown Voltage Change Reverse Dynamic Impedance Forward Voltage Drop RMS Noise Voltage Reverse Breakdown Voltage Change with Current Breakdown Voltage Temperature Coefficient Conditions Min 1 160 1 210 1 195 Typ 1 220 1 22 1 22 60 02 0 25 0 67 5 15 0 01 Max 1 280 1 232 1 245 15 10 08 10 Units V V V mV X X V mV mV %C
IR e 1 mA
0 5 mA s IR s 20 mA IR e 1 mA IR e 10 mA IF e 1 0 mA 10 Hz s f s 10 kHz IR e 1 mA 0 5 mA s IR s 10 mA TMIN s TA s TMAX 1 0 mA s IR s 10 mA TMIN s TA s TMAX
Note 1 For operating at elevated temperatures the device must be derated based on a 150 C maximum junction and a thermal resistance of 80 C W junction to Nase or 440 C W junction to ambient c i ote 2 These specifications apply for TA e 25 C unless stated otherwise At high currents breakdown voltage should be measured with lead lengths less than nch Kelvin contact sockets are also recommended The diode should not be operated with shunt capacitances between 200 pF and 0 1 mF unless isolated by at N least a 100X resistor as it may oscillate at some currents T te 3 Refer to the following RETS drawings for military specifications RETS113-1X for LM113-1 RETS113-2X for LM113-2 or RETS113X for LM113 o
ypical Performance Characteristics
Temperature Drift Reverse Dynamic Impedance Reverse Characteristics
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2
Typical Performance Characteristics (Continued)
Reverse Characteristics Reverse Dynamic Impedance Noise Voltage
Forward Characteristics
Response Time
Maximum Shunt Capacitance
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Typical Applications (Continued)
Amplifier Biasing for Constant Gain with Temperature Constant Current Source
Thermometer
Adjust for 0V at 0 C
Adjust for 100 mV C
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3
LM113 LM313 Reference Diode
Physical Dimensions inches (millimeters)
Order Number LM113H LM113H 883 LM113-1H LM113-1H 883 LM113-2H LM113-2H 883 or LM313H NS Package Number H02A LIFE SUPPORT POLICY NATIONAL'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL 1 SEMICONDUCTOR CORPORATION As used herein Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body or (b) support or sustain life and whose failure to perform when properly used in accordance b with instructions for use provided in the labeling can e reasonably expected to result in a significant injury to the user N
ational Semiconductor 1 Corporation 111 West Bardin Road Arlington TX 76017 Tel 1(800) 272-9959 Fax 1(800) 737-7018
2 A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness
National Semiconductor Europe Fax (a49) 0-180-530 85 86 Email cnjwge tevm2 nsc com Deutsch Tel (a49) 0-180-530 85 85 English Tel (a49) 0-180-532 78 32 Fran ais Tel (a49) 0-180-532 93 58 Italiano Tel (a49) 0-180-534 16 80
National Semiconductor Hong Kong Ltd 13th Floor Straight Block Ocean Centre 5 Canton Rd Tsimshatsui Kowloon Hong Kong Tel (852) 2737-1600 Fax (852) 2736-9960
National Semiconductor Japan Ltd Tel 81-043-299-2309 Fax 81-043-299-2408
National does not assume any responsibility for use of any circuitry described no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications
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