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Part: LM2879T
Category:
Analog & Mixed-Signal Processing
-> Amplifiers
-> Audio/Power Amplifiers
Description: Lm2879 Dual 8w Audio Amplifier
Company: National Semiconductor Corporation
Datasheet: Download LM2879T datasheet File size : 634 kB
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Datasheet text preview:
LM2879 Dual 8W Audio Amplifier
February 1995
LM2879 Dual 8W Audio Amplifier
General Description
The LM2879 is a monolithic dual power amplifier which offers high quality performance for stereo phonographs tape players recorders AM-FM stereo receivers etc The LM2879 will deliver 8W channel to an 8X load The amplifier is designed to operate with a minimum of external components and contains an internal bias regulator to bias each amplifier Device overload protection consists of both F internal current limit and thermal shutdown
Y Y Y Y
Self-centering biasing 4 MX input impedance Internal current limiting Internal thermal protection
Applications
Y Y Y Y Y Y Y Y Y Y
eatures
Y Y Y Y
AVO typical 90 dB 9W per channel (typical) 60 dB ripple rejection 70 dB channel separation
Multi-channel audio systems Tape recorders and players Movie projectors Automotive systems Stereo phonographs Bridge output stages AM-FM radio receivers Intercoms Servo amplifiers Instrument systems
Connection Diagram and Typical Application
Plastic Package
Stereo Amplifier
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Order Number LM2879T See NS Package Number TA11B
TAB must be connected to GND
T
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FIGURE 1
C1995 National Semiconductor Corporation
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RRD-B30M115 Printed in U S A
Absolute Maximum Ratings
p If Military Aerospace specified devices are required lease contact the National Semiconductor Sales S Office Distributors for availability and specifications upply Voltage Input Voltage (Note 1) Operating Temperature (Note 2) 35V
g 0 7V
0 C to a 70 C
Storage Temperature Junction Temperature Lead Temp (Soldering 10 seconds) T ESD rating to be determined hermal Resistance iJC iJA
b 65
C to a 150 C 150 C 260 C
1C W 43 C W
ElectP ical Characteristics VS e 28V r
arameter Total Supply Current Operating Supply Voltage Output Power Channel Distortion Output Swing Channel Separation PO e 0W
TTAB e 25 C RL e 8X AV e 50 (34 dB) unless otherwise specified Min 6 Typ 12 6 8 0 05 VSb6V
b 50 b 70
Conditions
Max 65 32
Units mA V W
f e 1 kHz THD e 10% TTAB e 25 C f e 1 kHz RL e 8X PO e 1 W Channel RL e 8X CBYPASS e 50 mF CIN e 0 1 mF f e 1 kHz Output Referred VO e 4 Vrms CBYPASS e 50 mF CIN e 0 1 mF f e 120 Hz Output Referred Vripple e 1 Vrms Measured at DC Input Referred Split Supplies g 15V Pin 1 Tied to Pin 11 Equivalent Input Noise RS e 0 CIN e 0 1 mF BW e 20 b20 kHz CCIR ARM Output Noise Wideband RS e 0 CIN e 0 1 mF AV e 200 RS e 51X f e 1 kHz RL e 8X Open Loop VS e 28V 3 dB Bandwidth at 2 5W
1
% Vp-p dB
PSRR Positive Supply
b 50
b 60 b 60
g 13 5
dB dB V mV
PSRR Negative Supply Common-Mode Range Input Offset Voltage Noise
10
25 30 08 70 100 4 14 2 65 15
mV mV mV dB nA MX V V ms kHz A
Open Loop Gain Input Bias Current Input Impedance DC Output Voltage Slew Rate Power Bandwidth Current Limit
Note 1 The input voltage range is normally limited to g 0 7V with respect to pin 1 This range may be extended by shorting pin 1 to the positive supply ote 2 For operation at ambient temperature greater than 25 C the LM2879 must be derated based on a maximum 150 C junction temperature Thermal resistance junction to case is 3 C W Thermal resistance case to ambient is 40 C W
Typical Performance Characteristics
Device Dissipation vs Ambient Temperature Open Loop Gain vs Frequency Power Dissipation vs Power Output
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2
Typical Performance Characteristics
Supply Current vs Output Power
(Continued) Channel Separation (Referred to the Output) Frequency
Supply Rejection vs Frequency
Total Harmonic Distortion vs Frequency
Total Harmonic Distortion vs Frequency
Output Swing vs VS
Total Harmonic Distortion vs Power Output
Power Output Channel vs Supply Voltage
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3
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