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Details, datasheet, quote on part number:LM312
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| Part: | LM312 |
| Category: | Analog & Mixed-Signal Processing => Amplifiers => Operational Amplifiers => Low Power |
| Description: | Operational Amplifier (discontinued) |
| Company: | National Semiconductor Corporation |
| Datasheet: | Download LM312 datasheet File size : 205 kB |
| Request For quote: | Find where to buy LM312
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Datasheet text preview:
LM112 LM212 LM312 Operational Amplifiers
September 1992
LM112 LM212 LM312 Operational Amplifiers
General Description
The LM112 series are micropower operational amplifiers with very low offset-voltage and input-current errors at least a factor of ten better than FET amplifiers over a b 55 C to a 125 C temperature range Similar to the LM108 series that also use supergain transistors they differ in that they include internal frequency compensation and have proT visions for offset adjustment with a single potentiometer hese amplifiers will operate on supply voltages of g 2V to g 20V drawing a quiescent current of only 300 mA Performance is not appreciably affected over this range of voltages so operation from unregulated power sources is easily accomplished They can also be run from a single supply T like the 5V used for digital circuits he LM112 series are the first IC amplifiers to improve reliability by including overvoltage protection for the MOS compensation capacitor Without this feature IC's have been known to suffer catastrophic failure caused by short-duration overvoltage spikes on the supplies Unlike other internally-compensated IC amplifiers it is possible to overcompensate with an external capacitor to increase stability marT gin he LM212 is identical to the LM112 except that the LM212 has its performance guaranteed over a b25 C to a 85 C temperature range instead of b55 C to a 125 C The LM312 is guaranteed over a 0 C to a 70 C temperature range F
eatures
Y Y Y Y
Maximum input bias current of 3 nA over temperature Offset current less than 400 pA over temperature Low noise Guaranteed drift specifications
Connection Diagram
Metal Can Package
TL H 7751 4
Top View Order Number LM112H LM212H LM312H or LM112H 883 See NS Package Number H08C
Auxiliary Circuits
Offset Balancing Overcompensation for Greater Stability Margin
TL H 7751 2
TL H 7751 3
C1995 National Semiconductor Corporation
TL H 7751
RRD-B30M115 Printed in U S A
Absolute Maximum Ratings
If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and ( specifications Note 5) Supply Voltage Power Dissipation (Note 1) Differential Input Current (Note 2) Input Voltage (Note 3) Output Short-Circuit Duration Operating Temperature Range LM112 LM212 Storage Temperature Range Lead Temperature (Soldering 10 sec ) ESD rating to be determined E LM112 LM212 g 20V 500 mW
g 10 mA g 15V
LM312 g 18V 500 mW
g 10 mA g 15V
Continuous
b 55 C to a 125 C b 25 C to a 85 C b 65
Continuous 0 C to a 70 C
b 65
C to a 150 C 300 C
C to a 150 C 300 C
lectrical Characteristics (Note 4)
Parameter Input Offset Voltage Input Offset Current Input Bias Current Input Resistance Supply Current Large Signal Voltage Gain Input Offset Voltage Average Temperature Coefficient of Input Offset Voltage Input Offset Current Average Temperature Coefficient of Input Offset Current Input Bias Current Supply Current Large Signal Voltage Gain Output Voltage Swing Input Voltage Range Common-Mode Rejection Ratio Supply Voltage Rejection Ratio TA e 125 C VS e g 15V VOUT e g 10V RL t 10 kX VS e g 15V RL e 10 kX VS e g 15V 25
g 13 g 13 5 g 14
Conditions TA e 25 C TA e 25
LM112 LM212 Min Typ 07 0 05 08 30 70 03 50 300 30 30 15 04 05 25 30 0 15 04 15
g 13 g 14
LM312 Max 20 02 20 10 06 25 Min Typ 20 02 15 40 03 300 10 60 30 15 20 10 10 08 Max 75 1 7
Units mV nA nA MX mA V mV mV mV C nA pA C nA mA V mV
C
TA e 25 C TA e 25 C TA e 25 C TA e 25 C VS e g 15V VOUT e g 10V RL t 10 kX
g 14
V V
85 80
100 96
80 80
100 96
dB dB
Note 1 The maximum junction temperature of the LM112 is 150 C LM212 is 100 C and LM312 is 85 C For operating at elevated temperatures devices in the H08 N package must be derated based on a thermal resistance of 160 C W junction to ambient or 20 C W junction to case ote 2 The inputs are shunted with shunt diodes for overvoltage protection Therefore excessive current will flow if a differential input voltage in excess of 1V is N applied between the inputs unless some limiting resistance is used Note 3 For supply voltages less than g 15V the absolute maximum input voltage is equal to the supply voltage ote 4 These specifications apply for g 5V s VS s g 20V and b 55 C s TA s a 125 C (LM112) b25 C s TA s a 85 C (LM212) g5V s VS s g 15V and N C s TA s a 70 C (LM312) unless otherwise noted 0 ote 5 Refer to RETS112X for LM112H military specifications 2
Typical Performance Characteristics LM112
Input Currents Offset Error
LM212 Drift Error
Input Noise Voltage
Power Supply Rejection
Closed Loop Output Impedance
Voltage Gain
Output Swing
Supply Current
Open Loop Frequency Response
Large Signal Frequency Response
Voltage Follower Pulse Response
TL H 7751 5
3
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