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Details, datasheet, quote on part number:LM359
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| Part: | LM359 |
| Category: | Analog & Mixed-Signal Processing => Amplifiers => Operational Amplifiers => High Speed |
| Description: | LM359 - Dual, High Speed, Programmable, Current Mode (Norton) Amplifiers, Package: Soic Narrow, Pin Nb=14 |
| Company: | National Semiconductor Corporation |
| Datasheet: | Download LM359 datasheet File size : 737 kB |
| Request For quote: | Find where to buy LM359
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Datasheet text preview:
LM359 Dual, High Speed, Programmable, Current Mode (Norton) Amplifiers
August 2000
LM359 Dual, High Speed, Programmable, Current Mode (Norton) Amplifiers
General Description
The LM359 consists of two current differencing (Norton) input amplifiers. Design emphasis has been placed on obtaining high frequency performance and providing user programmable amplifier operating characteristics. Each amplifier is broadbanded to provide a high gain bandwidth product, fast slew rate and stable operation for an inverting closed loop gain of 10 or greater. Pins for additional external frequency compensation are provided. The amplifiers are designed to operate from a single supply and can accommodate input common-mode voltages greater than the supply.
Features
n User programmable gain bandwidth product, slew rate, input bias current, output stage biasing current and total device power dissipation n High gain bandwidth product (ISET = 0.5 mA) 400 MHz for AV = 10 to 100 30 MHz for AV = 1 n High slew rate (ISET = 0.5 mA) 60 V/µs for AV = 10 to 100 30 V/µs for AV = 1 n Current differencing inputs allow high common-mode input voltages n Operates from a single 5V to 22V supply n Large inverting amplifier output swing, 2 mV to VCC - 2V n Low spot noise, for f > 1 kHz
Applications
n n n n n General purpose video amplifiers High frequency, high Q active filters Photo-diode amplifiers Wide frequency range waveform generation circuits All LM3900 AC applications work to much higher frequencies
Typical Application
Connection Diagram
Dual-In-Line Package
DS007788-2 DS007788-1
· · · ·
AV = 20 dB -3 dB bandwidth = 2.5 Hz to 25 MHz Differential phase error < 1° at 3.58 MHz Differential gain error < 0.5% at 3.58 MHz
Top View Order Number LM359M or LM359N See NS Package Number M14A or N14A
© 2000 National Semiconductor Corporation
DS007788
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LM359
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage 22 VDC or ± 11 VDC
Power Dissipation (Note 2) J Package 1W N Package 750 mW Maximum TJ J Package +150°C N Package +125°C Thermal Resistance J Package jA 147°C/W still air 110°C/W with 400 linear feet/min air flow N Package jA 100°C/W still air 75°C/W with 400 linear feet/min air flow
10 mADC Input Currents, IIN(+) or IIN(-) Set Currents, ISET(IN) or ISET(OUT) 2 mADC Operating Temperature Range LM359 0°C to +70°C Storage Temperature Range -65°C to +150°C Lead Temperature (Soldering, 10 sec.) 260°C Soldering Information Dual-In-Line Package Soldering (10 sec.) 260°C Small Outline Package Vapor Phase (60 sec.) 215°C Infrared (15 sec.) 220°C See AN-450 "Surface Mounting Methods and Their Effect on Product Reliability" for other methods of soldering surface mount devices. ESD rating to be determined.
Electrical Characteristics
ISET(IN) = ISET(OUT) = 0.5 mA, Vsupply = 12V, TA = 25°C unless otherwise noted Parameter Open Loop Voltage Gain Bandwidth Unity Gain Gain Bandwidth Product Gain of 10 to 100 Slew Rate Unity Gain Gain of 10 to 100 Amplifier to Amplifier Coupling Mirror Gain (Note 3) at 2 mA IIN(+), ISET = 5 µA, TA = 25°C at 0.2 mA IIN(+), ISET = 5 µA Over Temp. at 20 µA IIN(+), ISET = 5 µA Over Temp. Mirror Gain (Note 3) Input Bias Current Input Resistance (re) Output Resistance Output Voltage Swing VOUT High VOUT Low at 20 µA to 0.2 mA IIN(+) Over Temp, ISET = 5 µA Inverting Input, TA = 25°C Over Temp. Inverting Input IOUT = 15 mA rms, f = 1 MHz RL = 600 IIN(-) and IIN(+) Grounded IIN(-) = 100 µA, IIN(+) = 0 9.5 10.3 2 50 V mV 2.5 3.5 8 15 30 µA µA k 3 5 % 0.9 1.0 1.1 µA/µA 0.9 0.9 1.0 1.0 1.1 1.1 µA/µA µA/µA RIN = 1 k, Ccomp = 10 pF RIN < 200 f = 100 Hz to 100 kHz, RL = 1k 30 60 -80 V/µs V/µs dB RIN = 50 to 200 200 400 MHz Conditions Min Vsupply = 12V, RL = 1k, f = 100 Hz TA = 125°C RIN = 1 k, Ccomp = 10 pF 15 62 LM359 Typ 72 68 30 Max dB dB MHz Units
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LM359
Electrical Characteristics
Parameter Output Currents Source Sink (Linear Region) Sink (Overdriven) Supply Current Power Supply Rejection (Note 4)
(Continued)
ISET(IN) = ISET(OUT) = 0.5 mA, Vsupply = 12V, TA = 25°C unless otherwise noted Conditions Min IIN(-) and IIN(+) Grounded, RL = 100 Vcomp-0.5V = VOUT = 1V, IIN(+) = 0 IIN(-) = 100 µA, IIN(+) = 0, VOUT Force = 1V Non-Inverting Input Grounded, RL = f = 120 Hz, IIN(+) Grounded 40 18.5 50 22 mA dB 1.5 16 LM359 Typ 40 4.7 3 Max mA mA mA Units
Note 1: "Absolute Maximum Ratings" indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. Note 2: See Maximum Power Dissipation graph. Note 3: Mirror gain is the current gain of the current mirror which is used as the non-inverting input. Mirror Gain is the % change in AI for two different mirror currents at any given temperature. Note 4: See Supply Rejection graphs.
Typical Performance Characteristics
Open Loop Gain Open Loop Gain Open Loop Gain
DS007788-39
DS007788-40
DS007788-41
Note: Shaded area refers to LM359
Gain Bandwidth Product
Slew Rate
Gain and Phase Feedback Gain = - 100
DS007788-42
DS007788-43 DS007788-44
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