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Details, datasheet, quote on part number:LM385-1.2MDC
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Datasheet text preview:
LM185-1.2/LM285-1.2/LM385-1.2 Micropower Voltage Reference Diode
January 2000
LM185-1.2/LM285-1.2/LM385-1.2 Micropower Voltage Reference Diode
General Description
The LM185-1.2/LM285-1.2/LM385-1.2 are micropower 2-terminal band-gap voltage regulator diodes. Operating over a 10 µA to 20 mA current range, they feature exceptionally low dynamic impedance and good temperature stability. On-chip trimming is used to provide tight voltage tolerance. Since the LM185-1.2 band-gap reference uses only transistors and resistors, low noise and good long term stability result. Careful design of the LM185-1.2 has made the device exceptionally tolerant of capacitive loading, making it easy to use in almost any reference application. The wide dynamic operating range allows its use with widely varying supplies with excellent regulation. The extremely low power drain of the LM185-1.2 makes it useful for micropower circuitry. This voltage reference can be used to make portable meters, regulators or general purpose analog circuitry with battery life approaching shelf life. Further, the wide operating current allows it to replace older references with a tighter tolerance part. The LM185-1.2 is rated for operation over a -55°C to 125°C temperature range while the LM285-1.2 is rated -40°C to 85°C and the LM385-1.2 0°C to 70°C. The LM185-1.2/ LM285-1.2 are available in a hermetic TO-46 package and the LM285-1.2/LM385-1.2 are also available in a low-cost TO-92 molded package, as well as SO and SOT-23. The LM185-1.2 is also available in a hermetic leadless chip carrier package.
Features
n n n n n n n
± 4 mV ( ± 0.3%) max. initial tolerance (A grade) Operating current of 10 µA to 20 mA 0.6 max dynamic impedance (A grade) Low temperature coefficient Low voltage reference -- 1.235V 2.5V device and adjustable device also available LM185-2.5 series and LM185 series, respectively
Connection Diagrams
T0-92 Plastic Package (Z)
SOT23
DS005518-33
* Pin 3 is attached to the Die Attach Pad (DAP) and should be connected
to Pin 2 or left floating.
DS005518-10
Order Number LM385M3-1.2 See NS Package Number MA03B
Bottom View Order Number LM285Z-1.2, LM285BXZ-1.2, LM285BYZ-1.2 LM385Z-1.2, LM385BZ-1.2 LM385BXZ-1.2 or LM385BYZ-1.2 See NS Package Number Z03A
© 2000 National Semiconductor Corporation
DS005518
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LM185-1.2/LM285-1.2/LM385-1.2
Connection Diagrams
(Continued) SO Package
DS005518-9
Order Number LM285M-1.2, LM285BXM-1.2, LM285BYM-1.2 LM385M-1.2, LM385BM-1.2 LM385BXM-1.2 or LM385BYM-1.2 See NS Package Number M08A TO-46 Metal Can Package (H)
DS005518-6
Bottom View Order Number LM185H-1.2, LM185H-1.2/883, LM185BXH-1.2, LM185BYH-1.2 LM285H-1.2 or LM285BXH-1.2 See NS Package Number H02A
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LM185-1.2/LM285-1.2/LM385-1.2
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. (Note 2) Reverse Current Forward Current Operating Temperature Range (Note 3) LM185-1.2 LM285-1.2 LM385-1.2 30 mA 10 mA -55°C to +125°C -40°C to +85°C 0°C to 70°C
Storage Temperature -55°C to +150°C Soldering Information TO-92 package: 10 sec. 260°C TO-46 package:10 sec. 300°C SO and SOT Pkg. Vapor phase (60 sec.) 215°C Infrared (15 sec.) 220°C See AN-450 "Surface Mounting Methods and Their Effect on Product Reliability" for other methods of soldering surface mount devices.
Electrical Characteristics (Note 4)
LM185-1.2 LM185BX-1.2 LM185BY-1.2 LM285-1.2 Parameter Conditions Typ LM285BX-1.2 LM285BY-1.2 Tested Limit (Notes 5, 8) Reverse Breakdown Voltage Minimum Operating Current Reverse Breakdown Voltage Change with Current Reverse Dynamic Impedance Wideband Noise (rms) Long Term Stability Average Temperature Coefficient (Note 7) IR = 100 µA, 10 Hz f 10 kHz IR = 100 µA, T = 1000 Hr, TA = 25°C ± 0.1°C IR = 100 µA X Suffix Y Suffix All Others 30 50 150 30 50 150 150 ppm/°C ppm/°C ppm/°C (Max)
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Note 2: Refer to RETS185H-1.2 for military specifications. Note 3: For elevated temperature operation, Tj max is: LM185 150°C LM285 125°C LM385 100°C
LM385B-1.2 LM385BX-1.2 LM385BY-1.2 LM385-1.2 Units (Limit) Tested Limit (Note 5) 1.223 1.247 Design Limit (Note 6) Tested Limit (Note 5) 1.205 1.260 20 1.5 25 15 10 1 20 20 15 1.5 25 Design Limit (Note 6) V(Min) V(Max) µA (Max) mV (Max) mV (Max) µV ppm
Design Limit (Note 6)
TA = 25°C, 10 µA IR 20 mA
1.235 8
1.223 1.247 10 1 10 20 1.5 20
15 1 20
LM385M3-1.2 10 µA IR 1 mA 1 mA IR 20 mA IR = 100 µA, f = 20 Hz 1 60 20
Thermal Resistance JA (junction to ambient) JC (junction to case)
TO-92 180°C/W (0.4" leads) 170°C/W (0.125" leads) N/A
TO-46 440°C/W 80°C/W
SO-8 165°C/W N/A
SOT23 283°C/W N/A
Note 4: Parameters identified with boldface type apply at temperature extremes. All other numbers apply at TA = TJ = 25°C.
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