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Part: LM394C
Category:
Discrete
-> Transistors
-> Bipolar
-> Bipolar Array
Description: LM394 - Supermatch Pair, Package: TO-5, Pin Nb=6
Company: National Semiconductor Corporation
Datasheet: Download LM394C datasheet File size : 4 kB
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Datasheet text preview:
LM194 LM394 Supermatch Pair
December 1994
LM194 LM394 Supermatch Pair
General Description
The LM194 and LM394 are junction isolated ultra wellmatched monolithic NPN transistor pairs with an order of magnitude improvement in matching over conventional transistor pairs This was accomplished by advanced linear proE cessing and a unique new device structure lectrical characteristics of these devices such as drift versus initial offset voltage noise and the exponential relationship of base-emitter voltage to collector current closely approach those of a theoretical transistor Extrinsic emitter and base resistances are much lower than presently available pairs either monolithic or discrete giving extremely low M noise and theoretical operation over a wide current range ost parameters are guaranteed over a current range of e mA to 1 mA and 0V up to 40V collector-base voltage 1 Tnsuring superior performance in nearly all applications i o guarantee long term stability of matching parameters nternal clamp diodes have been added across the emitterbase junction of each transistor These prevent degradation due to reverse biased emitter current the most common cause of field failures in matched devices The parasitic isolation junction formed by the diodes also clamps the substrate region to the most negative emitter to ensure comT plete isolation between devices he LM194 and LM394 will provide a considerable improvement in performance in most applications requiring a closely matched transistor pair In many cases trimming can be eliminated entirely improving reliability and decreasing costs Additionally the low noise and high gain make this T device attractive even where matching is not critical he LM194 and LM394 LM394B LM394C are available in an isolated header 6-lead TO-5 metal can package The LM394 LM394B LM394C are available in an 8-pin plastic dual-in-line package The LM194 is identical to the LM394 except for tighter electrical specifications and wider temperature range F
eatures
Y Y Y Y Y
Y Y
Y
Emitter-base voltage matched to 50 mV Offset voltage drift less than 0 1 mV C Current gain (hFE) matched to 2% Common-mode rejection ratio greater than 120 dB Parameters guaranteed over 1 mA to 1 mA collector current Extremely low noise Superior logging characteristics compared to conventional pairs Plug-in replacement for presently available devices
Typical Applications
Low Cost Accurate Square Root Circuit IOUT e 10b5 010 VIN Low Cost Accurate Squaring Circuit IOUT e 10b6 (VIN)2
TL H 9241 2 TL H 9241 1
Trim for full scale accuracy
C1995 National Semiconductor Corporation
TL H 9241
RRD-B30M115 Printed in U S A
Absolute Maximum Ratings
p If Military Aerospace specified devices are required lease contact the National Semiconductor Sales ( Office Distributors for availability and specifications Note 4) Collector Current Collector-Emitter Voltage Collector-Emitter Voltage LM394C Collector-Base Voltage LM394C Collector-Substrate Voltage LM394C Collector-Collector Voltage LM394C E 20 mA VMAX 35V 20V 35V 20V 35V 20V 35V 20V Base-Emitter Current Power Dissipation Junction Temperature LM194 LM394 LM394B LM394C Storage Temperature Range Soldering Information Metal Can Package (10 sec ) Dual-In-Line Package (10 sec ) Small Outline Package Vapor Phase (60 sec ) Infrared (15 sec )
g 10 mA
500 mW
C C b 65 C to a 150 C
260 C 260 C 215 C 220 C
b 55 C to a 125 b 25 C to a 85
See AN-450 ``Surface Mounting and their Effects on Product Reliability'' for other methods of soldering surface mount devices
lectrical Characteristics (TJ e 25 C)
Parameter Current Gain (hFE) Conditions Min VCB e 0V to VMAX (Note 1) IC e 1 mA IC e 100 mA IC e 10 mA IC e 1 m A VCB e 0V to VMAX IC e 10 mA to 1 mA IC e 1 m A VCB e 0 IC e 1 mA to 1 mA (Note 1) IC e 1 mA to 1 mA VCB e 0V to VMAX VCB e 0V IC e 1 mA to 0 3 mA IC e 10 mA to 1 mA (Note 2) IC1 e IC2 VOS Trimmed to 0 at 25 C IC e 3 nA to 300 mA VCB e 0 (Note 3) VCB e VMAX VCC e VMAX IC e 100 mA VCB e 0V f e 100 Hz to 100 kHz IC e 1 mA IB e 10 mA IC e 1 mA IB e 100 mA 350 350 300 200 LM194 Typ 700 550 450 300 05 10 2 Max Min 300 250 200 150 LM394 Typ 700 550 450 300 05 10 4 Max LM394B 394C Min 225 200 150 100 Typ 500 400 300 200 10 20 5 % % Max Units
Current Gain Match (hFE Match) 100 DIB I hFE(MIN)
e
C
Emitter-Base Offset Voltage Change in Emitter-Base Offset Voltage vs Collector-Base Voltage (CMRR) Change in Emitter-Base Offset Voltage vs Collector Current Emitter-Base Offset Voltage Temperature Drift Logging Conformity Collector-Base Leakage Collector-Collector Leakage Input Voltage Noise Collector to Emitter Saturation Voltage
25
100
25
150
50
200
mV
1
0
25
10
50
10
100
mV
5
25
5
50
5
50
mV
0 08 0 03 1 50
03 01
0 08 0 03 150
10 03
02 0 03 150
15 05
mV C mV C mV
0 05 01 1
0 25 20
0 05 01
05 50
0 05 01
05 50
nA nA
8
18 02 01
18 02 01
nV 0Hz V V
02 01
Note 1 Collector-base voltage is swept from 0 to VMAX at a collector current of 1 mA 10 mA 100 mA and 1 mA ote 2 Offset voltage drift with VOS e 0 at TA e 25 C is valid only when the ratio of IC1 to IC2 is adjusted to give the initial zero offset This ratio must be held to Nithin 0 003% over the entire temperature range Measurements taken at a 25 C and temperature extremes w Note 3 Logging conformity is measured by computing the best fit to a true exponential and expressing the error as a base-emitter voltage deviation ote 4 Refer to RETS194X drawing of military LM194H version for specificatio2s n
Typical Applications (Continued)
Fast Accurate Logging Amplifier VIN e 10V to 0 1 mV or IIN e 1 mA to 10 nA
TL H 9241 3
1 kX ( g 1%) at 25 C a3500 ppm C G Available from Vishay Ultronix Vand Junction CO Q81 Series r
OUT e b log10
V J
VIN
REF
Voltage Controlled Variable Gain Amplifier
TL H 9241 4
R8R10 and D2 provide a temperature Distortion k 0 1% independent gain control Bandwidth l 1 MHz 100 dB gain range G e b 336 V1 (dB)
3
Typical Applications (Continued)
Precision Low Drift Operational Amplifier
Common-mode range 10V IBIAS 25 nA IOS 0 5 nA VOS (untrimmed) 125 mV (DVOS DT) 0 2 mV C CMRR 120 dB AVOL 2 500 000 C 200 pF for unity gain C 30 pF for AV 10 C 5 pF for AV 100 C 0 pF for AV 1000
TL H 9241 5
High Accuracy One Quadrant Multiplier Divider
TL H 9241 6
VT UT e O
(X) (Y) positive inputs only (Z)
ypical linearity 0 1%
4
Typical Applications (Continued)
High Performance Instrumentation Amplifier
Gain e
106 RS
TL H 9241 7
Performance Characteristics
Linearity of Gain ( g 10V Output) Common-Mode Rejection Ratio (60 Hz) Common-Mode Rejection Ratio (1 kHz) Power Supply Rejection Ratio a Supply b Supply Bandwidth ( b 3 dB) Slew Rate Offset Voltage Drift Common-Mode Input Resistance Differential Input Resistance Input Referred Noise (100 Hz s f s 10 kHz) Input Bias Current Input Offset Current Common-Mode Range Output Swing (RL e 10 kX)
Assumes s 5 ppm C tracking of resistors
G e 10 000 G e 1 000 G e 100 G e 10 s 0 01 s 0 01 s 0 02 s 0 05 t 120 t 120 t 110 t 90 t 110 t 110 t 90 t 70
l 110 l 110 l 110 l 110 l 110 l 90 l 110 l 70
% dB dB
50 03 s0 25 l 109 l 3 x 108 5 75 15 g 11 g 13
dB dB 50 50 50 kHz 03 03 03 V ms s0 4 s 10 mV C 2 l 109 l 109 l 109 X l 3 x 108 l 3 x 108 l 3 x 108 X nV 6 12 70 0Hz 75 75 75 nA 15 15 15 nA g 11 g 11 g 10 V g 13 g 13 g 13 V
5
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