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Details, datasheet, quote on part number:LM4879MM
 
 
Part:LM4879MM
Category:Multimedia => Audio => Amplifiers => Power Amplifiers => Boomer Audio Power Amplifiers
Description:LM4879 - 1.1 Watt Audio Power Amplifier, Package: Microsmd, Pin Nb=9
Company:National Semiconductor Corporation
Datasheet:Download LM4879MM datasheet   File size : 685 kB
Request For quote:  Find where to buy LM4879MM
 



Datasheet text preview:
LM4879 1.1 Watt Audio Power Amplifier
April 2003
LM4879 1.1 Watt Audio Power Amplifier
General Description
The LM4879 is an audio power amplifier primarily designed for demanding applications in mobile phones and other portable communication device applications. It is capable of delivering 1.1 watt of continuous average power to an 8 BTL load with less than 1% distortion (THD+N) from a 5VDC power supply. Boomer audio power amplifiers were designed specifically to provide high quality output power with a minimal amount of external components. The LM4879 does not require output coupling capacitors or bootstrap capacitors, and therefore is ideally suited for lower-power portable applications where minimal space and power consumption are primary requirements. The LM4879 features a low-power consumption global shutdown mode, which is achieved by driving the shutdown pin with logic low. Additionally, the LM4879 features an internal thermal shutdown protection mechanism. The LM4879 contains advanced pop & click circuitry which eliminates noises which would otherwise occur during turn-on and turn-off transitions. The LM4879 is unity-gain stable and can be configured by external gain-setting resistors.
Key Specifications
j PSRR: 5V, 3V @ 217Hz j Power Output at 5V & 1% THD+N j Power Output at 3V & 1% THD+N j Shutdown Current
62dB (typ) 1.1W (typ) 350mW (typ) 0.1µA (typ)
Features
n No output coupling capacitors, snubber networks or bootstrap capacitors required n Unity gain stable n Ultra low current shutdown mode n Fast turn on: 80ms (typ), 110ms (max) with 1.0µF capacitor n BTL output can drive capacitive loads up to 100pF n Advanced pop & click circuitry eliminates noises during turn-on and turn-off transitions n 2.2V - 5.0V operation n Available in space-saving µSMD and MSOP packages
Applications
n Mobile Phones n PDAs n Portable electronic devices
Typical Application
20024301
FIGURE 1. Typical Audio Amplifier Application Circuit
Boomer ® is a registered trademark of National Semiconductor Corporation.
© 2003 National Semiconductor Corporation
DS200243
www.national.com
LM4879
Connection Diagrams
8 Bump micro SMD 8 Bump micro SMD Marking
20024383
20024382
Top View Order Number LM4879IBP, LM4879IBPX See NS Package Number BPA08DDB Mini Small Outline (MSOP) Package
Top View X - Date Code T - Die Traceability G - Boomer Family N- LM4879IBP
MSOP Marking
20024385
20024384
Top View G - Boomer Family 79-LM4879MM
Top View NC = No Connect Order Number LM4879MM See NS Package Number MUB10A 9 Bump micro SMD 9 Bump micro SMD Marking
20024387
Top View X - Date Code T - Die Traceability G - Boomer Family 79 - LM4879IBL
20024386
Top View Order Number LM4879IBL, LM4879IBLX See NS package Number BLA09AAB
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LM4879
Absolute Maximum Ratings
(Note 2)
Thermal Resistance JA (BPA08DDB) JA (BLA09AAB) JC (MUB10A) JA (MUB10A) 220°C/W (Note 10) 180°C/W (Note 10) 56°C/W 190°C/W
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage (Note 9) Storage Temperature Input Voltage Power Dissipation (Note 3) ESD Susceptibility (Note 4) ESD Susceptibility (Note 5) Junction Temperature 6.0V -65°C to +150°C -0.3V to VDD +0.3V Internally Limited 2000V 200V 150°C
Operating Ratings
Temperature Range TMIN TA TMAX Supply Voltage -40°C TA 85°C 2.2V VDD 5.0V
Electrical Characteristics VDD = 5V (Notes 1, 2) The following specifications apply for the circuit shown in Figure 1 unless otherwise specified. Limits apply for TA = 25°C.
LM4879 Symbol IDD ISD VOS Po THD+N Parameter Quiescent Power Supply Current Shutdown Current Output Offset Voltage Output Power Total Harmonic Distortion+Noise THD+N = 1% (max); f = 1kHz Po = 0.4Wrms; f = 1kHz Vripple = 200mVsine p-p, CB = 1.0µF Input terminated with 10 to ground Conditions VIN = 0V, 8 BTL Vshutdown = GND Typical (Note 6) 5 0.1 5 1.1 0.1 68 (f = 1kHz) 62 (f = 217Hz) Limit (Notes 7, 8) 10 2.0 40 0.9 Units (Limits) mA (max) µA (max) mV (max) W (min) %
PSRR
Power Supply Rejection Ratio
55
dB (min)
VSDIH VSDIL TWU
Shutdown High Input Voltage Shutdown Low Input Voltage Wake-up Time CB = 1.0µF A-Weighted; Measured across 8 BTL Input terminated with 10 to ground 80
1.4 0.4 110
V (min) V (max) ms (max)
NOUT
Output Noise
26
µVRMS
Electrical Characteristics VDD = 3.0V (Notes 1, 2) The following specifications apply for the circuit shown in Figure 1 unless otherwise specified. Limits apply for TA = 25°C.
LM4879 Symbol IDD ISD VOS Po THD+N Parameter Quiescent Power Supply Current Shutdown Current Output Offset Voltage Output Power Total Harmonic Distortion+Noise THD+N = 1% (max); f = 1kHz Po = 0.15Wrms; f = 1kHz Vripple = 200mVsine p-p, CB = 1.0µF Input terminated with 10 to ground Conditions VIN = 0V, 8 BTL Vshutdown = GND Typical (Note 6) 4.5 0.1 5 350 0.1 68 (f = 1kHz) 62 (f = 217Hz) Limit (Notes 7, 8) 9 2.0 40 320 Units (Limits) mA (max) µA (max) mV (max) mW %
PSRR
Power Supply Rejection Ratio
55
dB (min)
VSDIH VSDIL TWU
Shutdown High Input Voltage Shutdown Low Input Voltage Wake-up Time CB = 1.0µF 80
1.4 0.4 110
V (min) V (max) ms (max)
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