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Part: LM615AM
Category:
Power Management
-> Voltage References
Description: Quad Comparator And Adjustable Reference (discontinued)
Company: National Semiconductor Corporation
Datasheet: Download LM615AM datasheet File size : 284 kB
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LM615 Quad Comparator and Adjustable Reference
December 1994
LM615 Quad Comparator and Adjustable Reference
General Description
The comparators have an input range which extends to the negative supply and have open-collector outputs Improved over the LM139 series the input stages of the comparators have lateral PNP input transistors which enable low input currents for large differential input voltages and swings above V a T he voltage reference is a three-terminal shunt-type bandgap and is referred to the Vb terminal Two resistors program the reference from 1 24V to 6 3V with accuracy of g 0 6% available The reference features operation over a shunt current range of 17 mA to 20 mA low dynamic impedance broad capacitive load range and cathode terminal v Aoltage ranging from a diode-drop below V b to above V a s a member of National's Super-Block TM family the LM615 is a space-saving monolithic alternative to a multichip solution offering a high level of integration without sacrificing performance
eatures
COMPARATORS Y Low operating current Y Wide supply voltage range Y Open-collector outputs Y Input common-mode range Y Wide differential input voltage REFERENCE Y Adjustable output voltage Y Tight initial tolerance available Y Wide operating current range Y Tolerant of load capacitance 600 mA 4V to 36V Vb to (V a b 1 8V) g 36V 1 24V to 6 3V C) 17 mA to 20 mA
g 0 6% (25
Applications
Y Y
Adjustable threshold detector
F Time-delay generator Y Voltage window comparator Y Power supply monitor Y RGB level detector
Connection Diagram
M Package N Package
TL H 11057 24
TL H 11057 1
Top View
Top View
Ordering Information
For information about surface-mount packaging of this device please contact the Analog Product Marketing group at National Semiconductor Corp headquarters Reference Tolerances
g 0 6% at 25 C 80 ppm C max
Temperature Range Military b 55 C s TJ s a 125 C LM615AMN LM615AMJ 883 (Note 13)
b 40
Industrial C s TJ s a 85 C LM615AIN
Package 16-Pin Molded DIP 16-Pin Ceramic DIP
NSC Package Number N16A J16A N16A M16A
g 2 0% at 25 C 150 ppm C max
LM615MN
LM615IN LM615IM
16-Pin Molded DIP 16-Pin Narrow Surface Mount
C Super-BlockTM is a trademark of National Semiconductor Corporation
1995 National Semiconductor Corporation
TL H 11057
RRD-B30M115 Printed in U S A
Absolute Maximum Ratings (Note 1)
p If Military Aerospace specified devices are required lease contact the National Semiconductor Sales V Office Distributors for availability and specifications oltage on Any Pin Except VRO (referred to Vbpin) (Note 2) (Note 3) Current through Any Input Pin and VRO Pin Differential Input Voltage Output Short-Circuit Duration Storage Temperature Range
b 65
Maximum Junction Temperature
150 C
36V (Max)
b 0 3V (Min)
g 20 mA g 36V
Thermal Resistance Junction-to-Ambient (Note 5) N Package 95 C W Soldering Information N Package Soldering (10 seconds) 260 C ESD Tolerance (Note 6)
g 1 kV
Operating Temperature Range
LM615AI LM615I LM615A LM615M
b 40 b 55
(Note 4)
C s TJ s a 85 C C s TJ s a 125 C
C s TJ s a 150 C
Electrical Characteristics
These specifications apply for Vb e GND e 0V V a e 5V VCM e VOUT e V a 2 IR e 100 mA FEEDBACK pin shorted to GND unless otherwise specified Limits in standard typeface are for TJ e 25 C limits in boldface type apply over the Operating Temperature Range L M615AM LM615AI Limits (Note 8) LM615M LM615I Limits (Note 8)
Symbol
Parameter
Conditions
Typical (Note 7)
Units
COMPARATORS IS VOS VOS DVOS DT IB IOS AV Total Supply Current Offset Voltage over V a Range Offset Voltage over VCM Range Average Offset Voltage Drift Input Bias Current Input Offset Current Voltage Gain RL e 10 kX to 36V 2V s VOUT s 27V V a IN e 1 4V VbIN e TTL Swing RL e 5 1 kX V a IN e 0V VbIN e 1V VOUT e 1 5V VOUT e 0 4V IL Output Leakage Current V a IN e 1V VbIN e 0V VOUT e 36V
a V Current RLOAD e % a 3V s V s 36V
250 350 10 20 10 15 15
b5 b8
550 600 30 60 30 60
600 650 50 70 50 70
mA max mA max mV max mV max mV max mV max mV C
4V s V a s 36V RL e 15 kX 0V s VCM s (V a b1 8V) V a e 30V RL e 15 kX
25 30 4 5 50
35 40 4 5 50
nA max nA max nA max nA max V mV min V mV ms ms
02 03 500 100
tR ISINK
Large Signal Response Time Output Sink Current
15 20 20 13 28 24 01 02 10 8 10 05 10 10 8 08 05 10
mA min mA min mA min mA min mA max mA
2
Electrical Characteristics
These specifications apply for Vb e GND e 0V V a e 5V VCM e VOUT e V a 2 IR e 100 mA FEEDBACK pin shorted to GND unless otherwise specified Limits in standard typeface are for TJ e 25 C limits in boldface type apply over the Operating Temperature Range (Continued) LM615AM LM615AI Limits (Note 8) LM615M LM615I Limits (Note 8)
Symbol
Parameter
Conditions
Typical (Note 7)
Units
VOLTAGE REFERENCE (Note 9) VR Reference Voltage Average Drift with Temperature Average Drift with Time Hysteresis VR Change with Current (Note 11) VR 100 mA b VR 17 mA VR 10 mA b VR 100 mA (Note 12) R D VR DVRO D VR DV a Resistance VR Change with VRO VR Change with V a Change DVR 10 mA to 0 1 mA 9 9 mA DVR 100 mA to 17 mA 83 mA VR VRO VR Va VR Va IFB en FEEDBACK Bias Current Voltage Noise
e VR b
1 244
1 2365 1 2515 ( g 0 6%) 80
1 2191 1 2689 ( g 2%) 150
V min V max ppm C max ppm kH ppm kH mV C
D VR DT D VR kH D VR D TJ D VR D IR
(Note 10) TJ e 40 C TJ e 150 C
18 400 1000 32
0 05
01
15 20
1 11 5 55 0 56 13 5 10 12 13 1 15 35 40
1 11 5 55 0 56 13 5 10 12 13 1 15 50 55
mV max mV max mV max mV max X max X max mV max mV max mV max mV max mV max mV max nA max nA max mVRMS
02 06 25 28
01 01 0 01 0 01
VR VRO
e 6 3V
e 5V b
VR Va VR Va
e 36V
e 5V b
e 3V
Vb s VFB s 5 06V BW e 10 Hz to 10 kHz
22 29 30
Note 1 Absolute maximum ratings indicate limits beyond which damage to the component may occur Electrical specifications do not apply when operating the N device beyond its rated operating conditions Note 2 Input voltage above V a is allowed As long as one input pin voltage remains inside the common-mode range the comparator will deliver the correct output ote 3 More accurately it is excessive current flow with resulting excess heating that limits the voltages on all pins When any pin is pulled a diode drop below Vb a parasitic NPN transistor turns ON No latch-up will occur as long as the current through that pin remains below the Maximum Rating Operation is undefined N and unpredictable when any parasitic diode or transistor is conducting ote 4 Shorting an Output to Vb will not cause power dissipation so it may be continuous However shorting an Output to any more positive voltage (including I a ) will cause 80 mA (typ ) to be drawn through the output transistor This current multiplied by the applied voltage is the power dissipation in the output transistor V f the total power from all shorted outputs causes the junction temperature to exceed 150 C degraded reliability or destruction of the device may occur To N determine junction temperature see Note 5 ote 5 Junction temperature may be calculated using TJ e TA a PD iJA The given thermal resistance is worst-case for packages in sockets in still air For N packages soldered to copper-clad board with dissipation from one comparator or reference output transistor nominal iJA is 80 C W for the N package Note 6 Human body model 100 pF discharge through a 1 5 kX resistor ote 7 Typical values in standard typeface are for TJ e 25 C values in boldface type apply for the full operating temperature range These values represent the N most likely parametric norm Note 8 All limits are guaranteed for TJ e a 25 C (standard type face) or over the full operating temperature range (bold type face) ote 9 VRO is the reference output voltage which may be set for 1 2V to 6 3V (see Application Information) VR is the VRO-to-FEEDBACK voltage (nominally 1 244V) Note 10 Average reference drift is calculated from the measurement of the reference voltage at 25 C and at the temperature extremes The drift in ppm C is 106 DVR VR 25 C DTJ where DVR is the lowest value subtracted from the highest VR 25 C is the value at 25 C and DTJ is the temperature range This N parameter is guaranteed by design and sample testing ote 11 Hysteresis is the change in VRO caused by a change in TJ after the reference has been ``dehysterized '' To dehysterize the reference that is minimize the N hysteresis to the typical value its junction temperature should be cycled in the following pattern spiraling in toward 25 C 25 C 85 C b40 C 70 C 0 C 25 C Note 12 Low contact resistance is required for accurate measurement ote 13 A military RETS electrical test specification is available on request The LM615AMJ 883 may also be procured as a Standard Military Drawing 3
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