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Details, datasheet, quote on part number:LM6161W
 
 
Part:LM6161W
Description:High Speed Operational Amplifier
Company:National Semiconductor Corporation
Datasheet:Download LM6161W datasheet   File size : 255 kB
Request For quote:  Find where to buy LM6161W
 



Datasheet text preview:
LM6161 LM6261 LM6361 High Speed Operational Amplifier
September 1995
LM6161 LM6261 LM6361 High Speed Operational Amplifier
General Description
The LM6161 family of high-speed amplifiers exhibits an excellent speed-power product in delivering 300 V ms and F 50 MHz unity gain stability with only 5 mA of supply current urther power savings and application convenience are possible by taking advantage of the wide dynamic range in operating supply voltage which extends all the way down to a T 5V hese amplifiers are built with National's VIPTM (Vertically Integrated PNP) process which provides fast PNP transistors that are true complements to the already fast NPN devices This advanced junction-isolated process delivers high speed performance without the need for complex and expensive dielectric isolation
Y Y
eatures
High slew rate High unity gain freq Y Low supply current Y Fast settling Y Low differential gain Y Low differential phase Y Wide supply range Y Stable with unlimited capacitive load Y Well behaved easy to apply 300 V ms 50 MHz 5 mA 120 ns to 0 1% k 0 1% 01 4 75V to 32V
Applications
F Video amplifier Y High-frequency filter Y Wide-bandwidth signal conditioning Y Radar Y Sonar
Y
Connection Diagrams
20-Lead LCC 10-Lead Flatpak
TL H 9057 ­ 13
See NS Package Number W10A
TL H 9057 ­ 14
See NS Package Number E20A
TL H 9057 ­ 5
Temperature Range Military b 55 C s TA s a 125 C Industrial
b 25
Commercial LM6361N LM6361J
Package
NSC Drawing N08E J08A M08A E20A W10A
See NS Package Number J08A N 08E or M08A
C s TA s a 85 C 0 C s TA s a 70 C
LM6261N 8-Pin Molded DIP 8-Pin Ceramic DIP 8-Pin Molded Surface Mt 20-Lead LCC 10-Pin Ceramic Flatpak
LM6161J 883 5962-8962101PA LM6261M L M6161E 883 5962-89621012A LM6161W 883 5962-8962101HA
LM6361M
C VIPTM is a trademark of National Semiconductor Corporation
1995 National Semiconductor Corporation
TL H 9057
RRD-B30M115 Printed in U S A
Absolute Maximum Ratings
(Note 12) See AN-450 ``Surface Mounting Methods and Their Effect on Product Reliability'' for other methods of soldering surS face mount devices torage Temp Range Max Junction Temperature ESD Tolerance (Notes 6 and 7)
b 65
p If Military Aerospace specified devices are required lease contact the National Semiconductor Sales S Office Distributors for availability and specifications upply Voltage (V a b Vb) Differential Input Voltage (Note 8) 36V
g 8V
C to a 150 C 150 C
g 700V
Common-Mode Voltage Range (Note 10) (V a b 0 7V) to (Vb a 0 7V) Output Short Circuit to GND (Note 1) Soldering Information Dual-In-Line Package (N J) Soldering (10 sec ) Small Outline Package (M) Vapor Phase (60 sec ) Infrared (15 sec ) Continuous
Operating Ratings (Note 12)
Temperature Range (Note 2) LM6161 LM6261 LM6361 Supply Voltage Range
b 55 C s TJ s a 125 b 25 C s TJ s a 85 0 C s TJ s a 70
260 C 215 C 220 C
C C C
4 75V to 32V
DC Electrical Characteristics
Bhe following specifications apply for Supply Voltage e g 15V VCM e 0 RL t 100 kX and RS e 50X unless otherwise noted T S oldface limits apply for TJ e TMIN to TMAX all other limits TJ e 25 C LM6161 ymbol Parameter Conditions Typ Limit (Notes 3 11) 7 10 LM6261 Limit (Note 3) 7 9 LM6361 Limit (Note 3) 20 22 Units
VOS VOS Drift Ib IOS IOS Drift RIN CIN AVOL
Input Offset Voltage Input Offset Voltage Average Drift Input Bias Current Input Offset Current Input Offset Current Average Drift Input Resistance Input Capacitance Large Signal Voltage Gain Differential AV e a 1
10
5 10 2 150 04 325 MHz 15 7 50
mV Max mV C
3 6 350 800
3 5 350 600
5 6 1500 1900
mA Max nA Max nA C kX pF
VOUT e g 10V RL e 2 kX (Note 9) RL e 10 kX (Note 9)
550 300
550 400
400 350
VV Min VV
2900
a 14 0 b 13 2 a 13 9 a 13 8 b 12 9 b 12 7 a 13 9 a 13 8 b 12 9 b 12 7 a 13 8 a 13 7 b 12 8 b 12 7
VCM
Input Common-Mode Voltage Range
Supply e g 15V
Volts Min Volts Min Volts Min Volts Max dB Min dB Min Volts Min Volts Min
Supply e a 5V (Note 4)
40 18
39 38 20 22 80 74 80 74
a 13 5 a 13 3 b 13 0 b 12 7
39 38 20 22 80 76 80 76
a 13 5 a 13 3 b 13 0 b 12 8
38 37 21 22 72 70 72 70
a 13 4 a 13 3 b 12 9 b 12 8
CMRR PSRR VO
Common-Mode Rejection Ratio Power Supply Rejection Ratio Output Voltage Swing
b 10V s VCM s a 10V
g 10V s V g s g 16V
94 90
a 14 2 b 13 4
Supply e g 15V and RL e 2 kX
2
DC Electrical Characteristics (Continued) The following specifications apply for Supply Voltage e g 15V VCM e 0 RL t 100 kX and RS e 50X unless otherwise noted B oldface limits apply for TJ e TMIN to TMAX all other limits TJ e 25 C S
LM6161 ymbol VO (Continued) Parameter Output Voltage Swing (Continued) Conditions Supply e a 5V and RL e 2 kX (Note 4) Source Sink IS Supply Current Typ Limit (Notes 3 11) 35 33 17 20 30 20 30 20 65 68 LM6261 Limit (Note 3) 35 33 17 19 30 25 30 25 65 67 LM6361 Limit (Note 3) 34 33 18 19 30 25 30 25 68 69 Units Volts Min Volts Max mA Min mA Min mA Max
42 13
Output Short Circuit Current
65 65 50
AC Electrical Characteristics
Bhe following specifications apply for Supply Voltage e g 15V VCM e 0 RL t 100 kX and RS e 50X unless otherwise noted T oldface limits apply for TJ e TMIN to TMAX all other limits TJ e 25 C L M6161 Symbol GBW Parameter Gain-Bandwidth Product Slew Rate
f
LM6261 Limit (Note 3) 40 35 200 180
LM6361 Limit (Note 3) 35 32 200 180 Units MHz Min MHz V ms Min V ms MHz ns Deg % Deg nV 0Hz pA 0Hz
Conditions
e 20 MHz
Typ 50 35 300 200 45 120 45
Limit (Notes 3 11) 40 30 200 180
Supply e g 5V SR AV e a 1 (Note 8) Supply e g 5V (Note 8) PBW tS wm AD wD enp-p inp-p Power Bandwidth Settling Time Phase Margin Differential Gain Differential Phase Input Noise Voltage Input Noise Current NTSC AV e a 4 NTSC AV e a 4 f e 10 kHz f e 10 kHz VOUT e 20 VPP 10V Step to 0 1% AV e b1 RL e 2 kX
k0 1
01 15 15
Note 1 Continuous short-circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150 C ote 2 The typical junction-to-ambient thermal resistance of the molded plastic DIP (N) is 105 C W the molded plastic SO (M) package is 155 C W and the Nerdip (J) package is 125 C W All numbers apply for packages soldered directly into a printed circuit board c Note 3 Limits are guaranteed by testing or correlation Pin 8 (Vos Adjust) are each ote 4 For single supply operation the following conditions apply V a e 5V Vb e 0V VCM e 2 5V VOUT e 2 5V Pin 1 Nonnected to Pin 4 (Vb) to realize maximum output swing This connection will degrade VOS VOS Drift and Input Voltage Noise c Note 5 CL s 5 pF ote 6 In order to achieve optimum AC performance the input stage was designed without protective clamps Exceeding the maximum differential input voltage results in reverse breakdown of the base-emitter junction of one of the input transistors and probable degradation of the input parameters (especially Vos Ios and Noise) ote 7 The average voltage that the weakest pin combinations (those involving Pin 2 or Pin 3) can withstand and still conform to the datasheet limits The test Nircuit used consists of the human body model of 100 pF in series with 1500X c Note 8 VIN e 8V step For supply e g 5V VIN e 5V step Note 9 Voltage Gain is the total output swing (20V) divided by the input signal required to produce that swing Note 10 The voltage between V a and either input pin must not exceed 36V ote 11 A military RETS electrical test specification is available on request At the time of printing the RETS6161X specs complied with all Boldface limits in this N column ote 12 Absolute Maximum Ratings indicate limits beyond which damage to the device may occur Operating Ratings indicate conditions for which the device is T intended to be functional but do not guarantee specific performance limits For guaranteed specifications and test conditions see the Electrical Characteristics he guaranteed specifications apply only for the test conditions listed 3