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Part: LMV115MG
Category:
Description: GSM Baseband 30MHz 2.8V Oscillator Buffer
Company: National Semiconductor Corporation
Datasheet: Download LMV115MG datasheet File size : 1045 kB
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LMV115 GSM Baseband 30MHz 2.8V Oscillator Buffer
December 2003
LMV115 GSM Baseband 30MHz 2.8V Oscillator Buffer
General Description
The LMV115 is a 30MHz buffer specially designed to minimize the effects of spurious signals from the base band chip to the oscillator. The buffer also minimizes the influence of varying load resistance and capacitance to the oscillator and increases the drive capability. The input of the LMV115 is internally biased with two equal resistors to the power supply rails. This allows AC coupling on the input. The LMV115 offers a shutdown function to optimize current consumption. This shutdown function can also be used to control the supply voltage of an external oscillator. The device is in shutdown mode when the shutdown pin is connected to VDD. The LMV115 comes in SC70-6 package. This space saving product reduces components, improves clock signal and allows ease of placement for the best form factor.
Features
(Typical 2.8V supply; values unless otherwise specified) n Low supply current: 0.3mA n 2.5V to 3.3V supply n AC coupling possible without external bias resistors. n Includes shutdown function external oscillator n SC70-6 pin package 2.1 x 2mm n Operating Temperature Range -40°C to 85°C
Applications
n Cellular phones n GSM Modules n Oscillator Modules
Schematic Diagram
20075129
© 2003 National Semiconductor Corporation
DS200751
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LMV115
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. ESD Tolerance Human Body Model Machine Model Supply Voltage (V+ V-) Output Short Circuit to V
+
Junction Temperature (Note 6) Mounting Temperature Infrared or Convection (20 sec.)
+150°C 235°C
2000V (Note 2) 150V (Note 3) 3.6V (Note 4), (Note 5) (Note 4), (Note 5) -65°C to +150°C
Operating Ratings (Note 1)
Supply Voltage (V+ V-) Temperature Range (Note 6), (Note 7) SC70-6 2.5V to 3.3V -40°C to +85°C 414°C/W
Package Thermal Resistance (Note 6), (Note 7)
Output Short Circuit to V- Storage Temperature Range
2.8V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for TJ = 25°C, V+ = 2.8V, V- = 0V, VCM = V+/2, shutdown = 0.0V, and RL = 50k to V+/2, CL = 5pF to V+/2 and CCOUPLING = 1nF.Boldface limits apply at the temperature extremes. Symbol SSBW GFN FPBW tr tf ts OS SR HD2 HD3 THD en Isolation Parameter Small Signal Bandwidth Gain Flatness 50kHz VOUT = 1.0VPP (+4.5dBm) 0.1VSTEP (10-90%) Conditions VOUT < 0.5VPP; -3dB Min (Note 9) Typ (Note 8) 31 2.8 9 11 11 95 24 18 -41 -43 -38 27 Max (Note 9) Units MHz MHz MHz
Time Domain Response ns ns % V/µs dBc dBc dBc nV/ dB
Distortion and Noise Performance
> 40
Static DC Performance ACL VOS TC VOS ROUT PSRR IS Small Signal Voltage Gain Output Offset Voltage Temperature Coefficient Output Offset Voltage Output Resistance Power Supply Rejection Ratio Supply Current (Note 12) f = 10kHz f = 25MHz V+ = 2.8V to V+ = 3.3V No Load; Shutdown = 2.8V No Load; Shutdown = 0V Miscellaneous Performance RIN CIN Input Resistance Input Capacitance Shutdown = 2.8V Shutdown = 0V Shutdown = 2.8V Shutdown = 0V 65 64 1.82 1.50 k pF 41 38 0.998 3.5 102 61 330 42 0.0 314 2.00 450 520 µA 1.10 1.11 35 55 V/V mV µV/°C
dB
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LMV115
2.8V Electrical Characteristics
(Continued) Unless otherwise specified, all limits guaranteed for TJ = 25°C, V+ = 2.8V, V- = 0V, VCM = V+/2, shutdown = 0.0V, and RL = 50k to V+/2, CL = 5pF to V+/2 and CCOUPLING = 1nF.Boldface limits apply at the temperature extremes. Parameter Input Impedance Output Swing Positive Output Swing Negative Conditions f = 25MHz; Shutdown = 2.8V f = 25MHz; Shutdown = 0V RL = 50k to V+/2 RL = 50k to V /2
+
Symbol ZIN VO
Min (Note 9)
Typ (Note 8) 2.38 2.47
Max (Note 9)
Units k
1.90 1.65
2.16 1.05 1.35 1.30 V
IO
Linear Output Current
No Load; VOUT = V+ - 1.1V (Sourcing) No Load; VOUT = V- + 1.1V (Sinking)
-90 -35 100 50 -90 -35 100 50
-206 µA 205 -186 µA 191 21 40 45
ISC
Output Short-Circuit Current (Note 5)
No Load; Sourcing to V+/2 No Load; Sinking from V+/2
RON
Switch in ON Position
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics. Note 2: Human Body Model (HBM) is 1.5k in series with 100pF. Note 3: Machine Model, 0 in series with 200pF. Note 4: Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C Note 5: Infinite Duration; Short circuit test is a momentary test. See next note. Note 6: The maximum power dissipation is a function of TJ(MAX), JA , and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) -TA) / JA. All numbers apply for packages soldered directly onto a PC board. Note 7: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA . There is no guarantee of parametric performance as indicated in the electrical tables under conditions of internal self-heating where TJ > TA. See Applications section for information on temperature de-rating of this device. Note 8: Typical Values represent the most likely parametric norm. Note 9: All limits are guaranteed by testing or statistical analysis. Note 10: Positive current corresponds to current flowing into the device. Note 11: Slew rate is the average of the positive and negative slew rate. Note 12: Average Temperature Coefficient is determined by dividing the change in a parameter at temperature extremes by the total temperature change.
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