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Details, datasheet, quote on part number:OPA156
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| Part: | OPA156 |
| Category: | Analog & Mixed-Signal Processing => Amplifiers => Operational Amplifiers => General Purpose |
| Description: | LF156 - JFET Input Operational Amplifiers, Package: TO-5, Pin Nb=8 |
| Company: | National Semiconductor Corporation |
| Datasheet: | Download OPA156 datasheet File size : 1105 kB |
| Request For quote: | Find where to buy OPA156
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Datasheet text preview:
LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers
December 2001
LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers
General Description
These are the first monolithic JFET input operational amplifiers to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FETTM Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner. n Logarithmic amplifiers n Photocell amplifiers n Sample and Hold circuits Common Features n Low input bias current: 30pA n Low Input Offset Current: 3pA n High input impedance: 1012 n Low input noise current: n High common-mode rejection ratio: 100 dB n Large dc voltage gain: 106 dB
Features
Advantages n Replace expensive hybrid and module FET op amps n Rugged JFETs allow blow-out free handling compared with MOSFET input devices n Excellent for low noise applications using either high or low source impedance -- very low 1/f corner n Offset adjust does not degrade drift or common-mode rejection as in most monolithic amplifiers n New output stage allows use of large capacitive loads (5,000 pF) without stability problems n Internal compensation and large differential input voltage capability
Uncommon Features
LF155/ LF355
j Extremely
LF156/ LF256/ LF356 1.5
LF257/ LF357 (AV = 5) 1.5
Units
4
µs
fast settling time to 0.01%
j Fast slew
5 2.5 20
12 5 12
50 20 12
V/µs MHz
rate
j Wide gain
Applications
n n n n Precision high speed integrators Fast D/A and A/D converters High impedance buffers Wideband, low noise, low drift amplifiers
bandwidth
j Low input
noise voltage
Simplified Schematic
00564601
*3pF in LF357 series.
BI-FETTM, BI-FET IITM are trademarks of National Semiconductor Corporation.
© 2001 National Semiconductor Corporation
DS005646
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LF155/LF156/LF256/LF257/LF355/LF356/LF357
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required, contact the National Semiconductor Sales Office/Distributors for availability and specifications. LF155/6 Supply Voltage Differential Input Voltage Input Voltage Range (Note 2) Output Short Circuit Duration TJMAX H-Package N-Package M-Package Power Dissipation at TA = 25°C (Notes 1, 8) H-Package (Still Air) H-Package (400 LF/Min Air Flow) N-Package M-Package Thermal Resistance (Typical) JA H-Package (Still Air) H-Package (400 LF/Min Air Flow) N-Package M-Package (Typical) JC H-Package Storage Temperature Range Soldering Information (Lead Temp.) Metal Can Package Soldering (10 sec.) Dual-In-Line Package Soldering (10 sec.) Small Outline Package Vapor Phase (60 sec.) Infrared (15 sec.) 215°C 220°C 215°C 220°C 260°C 260°C 260°C 300°C 300°C 300°C 23°C/W -65°C to +150°C 23°C/W -65°C to +150°C 23°C/W -65°C to +150°C 160°C/W 65°C/W 160°C/W 65°C/W 130°C/W 195°C/W 160°C/W 65°C/W 130°C/W 195°C/W 560 mW 1200 mW 400 mW 1000 mW 670 mW 380 mW 400 mW 1000 mW 670 mW 380 mW 150°C 115°C 100°C 100°C 115°C 100°C 100°C LF256/7/LF356B LF355/6/7
± 22V ± 40V ± 20V
Continuous
± 22V ± 40V ± 20V
Continuous
± 18V ± 30V ± 16V
Continuous
See AN-450 "Surface Mounting Methods and Their Effect on Product Reliability" for other methods of soldering surface mount devices. ESD tolerance (100 pF discharged through 1.5k) 1000V 1000V 1000V
DC Electrical Characteristics
(Note 3) Symbol VOS VOS/T TC/VOS IOS Parameter Input Offset Voltage Average TC of Input Offset Voltage Change in Average TC with VOS Adjust Input Offset Current Conditions Min RS = 50, TA = 25°C Over Temperature RS = 50 RS = 50, (Note 4) TJ = 25°C, (Notes 3, 5) TJTHIGH 5 0.5 3 20 20 LF155/6 Typ 3 Max Min 5 7 5 0.5 3 20 1 LF256/7 LF356B Typ 3 Max Min 5 6.5 5 0.5 3 50 2 LF355/6/7 Typ 3 Max 10 13 mV mV µV/°C µV/°C per mV pA nA Units
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2
LF155/LF156/LF256/LF257/LF355/LF356/LF357
DC Electrical Characteristics
(Note 3) Symbol IB RIN AVOL Parameter Input Bias Current Input Resistance Large Signal Voltage Gain Output Voltage Swing Input Common-Mode Voltage Range Common-Mode Rejection Ratio Supply Voltage Rejection Ratio (Note 6)
(Continued) LF256/7 LF356B Max Min 100 50 10 50 25
12
Conditions Min TJ = 25°C, (Notes 3, 5) TJTHIGH TJ = 25°C VS = ± 15V, TA = 25°C VO = ± 10V, RL = 2k Over Temperature
LF155/6 Typ 30
LF355/6/7 Max Min 100 5 Typ 30 10 25 15
12
Units pA nA V/mV V/mV
Typ 30 10
12
Max 200 8
200
50 25
200
200
VO VCM CMRR PSRR
VS = ± 15V, RL = 10k VS = ± 15V, RL = 2k VS = ± 15V
± 12 ± 10 ± 11
85 85
± 13 ± 12
+15.1 -12 100 100
± 12 ± 10 ± 11
85 85
± 13 ± 12 ± 15.1
-12 100 100
± 12 ± 10
+10 80 80
± 13 ± 12
+15.1 -12 100 100
V V V V dB dB
DC Electrical Characteristics
TA = TJ = 25°C, VS = ± 15V Parameter Supply Current LF155 Typ 2 Max 4 LF355 Typ 2 Max 4 LF156/256/257/356B Typ 5 Max 7 LF356 Typ 5 Max 10 LF357 Typ 5 Max 10 Units mA
AC Electrical Characteristics
TA = TJ = 25°C, VS = ± 15V LF155/355 Symbol SR Parameter Slew Rate Conditions Typ LF155/6: AV = 1, LF357: AV = 5 GBW ts en Gain Bandwidth Product Settling Time to 0.01% Equivalent Input Noise Voltage (Note 7) RS = 100 f = 100 Hz f = 1000 Hz in Equivalent Input Current Noise Input Capacitance f = 100 Hz f = 1000 Hz 25 20 0.01 0.01 3 15 12 0.01 0.01 3 15 12 0.01 0.01 3 pF 2.5 4 5 1.5 5 LF156/256/ 356B Min 7.5 LF156/256/356/ LF356B Typ 12 50 20 1.5 LF257/357 Units Typ V/µs V/µs MHz µs
CIN
Notes for Electrical Characteristics
Note 1: The maximum power dissipation for these devices must be derated at elevated temperatures and is dictated by TJMAX, JA, and the ambient temperature, TA. The maximum available power dissipation at any temperature is PD = (TJMAX-TA)/JA or the 25°C PdMAX, whichever is less. Note 2: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage. Note 3: Unless otherwise stated, these test conditions apply:
3
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