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Part: 2SC2148
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
Description: Microwave Low Noise Amplifier NPN Silicon Epitaxial Transistor
Company: NEC Electronics Inc.
Datasheet: Download 2SC2148 datasheet File size : 154 kB
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Datasheet text preview:
DATA SHEET
SILICON TRANSISTORS
2SC2148, 2SC2149
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC2148, 2SC2149 are economical microwave transistors encapsulated into new hermetic stripline packages, "micro X". These are designed for small signal amplifier, low noise amplifier, and oscillator applications in the L to C band, and CML circuit use.
4.0 MIN.
PACKAGE DIMENSIONS
(Unit : mm)
1
0.5±0.05 0.1-0.03
+0.06
FEATURES
2SC2148 NF: 2.1 dB TYP. @f = 500 MHz 2SC2149 NF: 2.6 dB TYP. @f = 2.0 GHz
4.0 MIN. 2
4.0 MIN. 4
3 0.5±0.05 2.55±0.2 2.1
1.8 MAX. 0.55
1. 2. 3. 4.
Emitter Collector Emitter Base
Derating curves of the 2SC2148, 2SC2149.
The maximum junction temperature of these transistors is allowed up to 200 °C, but the ambient or storage temperature is limitted to 150 °C. The operating junction temperature is estimated with power consumption (PT) and thermal resistance mentioned on these derating curves.
The information in this document is subject to change without notice. Document No. P11809EJ2V0DS00 (2nd edition) (Previous No. TC-1428) Date Published August 1996 P Printed in Japan
4.0 MIN.
45°
©
1981
2SC2148, 2SC2149
2SC2148
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
500 400 300 200 100 0
PT-Total Power Dissipation-mW
with infinite heat sink; Rth(j-c) 130 °C/W mounting on ceramic boad with solder (Al2O3 20 × 50 × 0.635 mm) ; Rth(j-a) 190 °C/W
free-air; Rth(j-a) 610 °C/W
50
100
150
200
48 TA-Ambient Temperature-°C
2SC2149
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
PT-Total Power Dissipation-mW
600
with infinite heat sink; Rth(j-c) 120 °C/W
400
mounting on ceramic boad with solder (Al2O3 20 × 50 × 0.635 mm) ; Rth(j-a) 180 °C/W free-air; Rth(j-a) 600 °C/W
200
0
50
100 110
140 150
200
TA-Ambient Temperature-°C
2
2SC2148, 2SC2149
2SC2148 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
C o l l e c t o r to Base Voltage C o l l e c t o r to Emitter Voltage E m i t t e r to Base Voltage C o l l e c t o r Current T o t a l Power Dissipation T o t a l Power Dissipation J u n c t i o n Temperature S t o r a g e Temperature V CBO VCEO VEBO IC P T(TA = 48 °C) P T(Tc = 150 °C) Tj Tstg 30 14 3.0 50 250 250 200 - 6 5 to +150 V V V mA mW mW °C °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Output Capacitance * Insertion Gain Noise Figure Maximum Available Gain SYMBOL IC B O IE B O hFE fT C ob S 2 1 e NF MAG
2
MIN.
TYP.
MAX. 0.1 0.1
UNIT
TEST CONDITIONS VCB = 15 V, IE = 0 VEB = 2.0 V, IC = 0 VCE = 10 V, IC = 10 mA
µA µA
30
80 3.0 0.55
200 GHz pF dB 3.5 dB dB
VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IC = 10 mA, f = 1.0 GHz VCE = 10 V, IC = 3.0 mA, f = 500 MHz VCE = 10 V, IC = 10 mA, f = 1.0 GHz
7.5
9.3 2.1 13.3
* The emitter terminal should be connected to the guard terminal of the three-terminal capacitance bridge.
TYPICAL CHARACTERISTICS (TA = 25 °C)
DC CURRENT GAIN vs. COLLECTOR CURRENT
50
200
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 10 V
VCE = 10 V
hFE-DC Current Gain
100
IC-Collector Current-mA
1 5 10 50
10 5
50
20
1 10 0.5 0.5 0.5
0.6
0.7
0.8
0.9
IC-Collector Current-mA
VBE-Base to Emitter Voltage-V
3
2SC2148, 2SC2149
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
7 15
INSERTION GAIN vs. COLLECTOR CURRENT VCE = 10 V f = 1.0 GHz
fT-Gain Bandwidth Product-GHz
5 3
VCE = 10 V
S21e2-Insertion Gain-dB
1 5 10 50
10
1
0.5 0.3
5
0.1 0.5
0 0.5
1
5
10
50
IC-Collector Current-mA
IC-Collector Current-mA
COLLECTOR AND EMITTER CAPACITANCE vs. REVERSE VOLTAGE
3 7
NOISE FIGURE vs. COLLECTOR CURRENT VCE = 10 V f = 500 MHz
Cob-Collector Capacitance-pF Cib-Emitter Capacitance-pF
f = 1.0 MHz
2 6
NF-Noise Figure-dB
5 4 3 2 1
untuned (50 ) tuned
1
Cob Cib
0.5
0.3 0 0.5 1 2 5 10 20 30
0 0.5
1
5
10
50
VCB-Collector to Base Voltage-V VEB-Emitter to Base Voltage-V
IC-Collector Current-mA
4
2SC2148, 2SC2149
2SC2149 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
C o l l e c t o r to Base Voltage C o l l e c t o r to Emitter Voltage E m i t t e r to Base Voltage C o l l e c t o r Current T o t a l Power Dissipation T o t a l Power Dissipation J u n c t i o n Temperature S t o r a g e Temperature V CBO VCEO VEBO IC P T(TA = 25 °C) P T(Tc = 140 °C) Tj T stg 25 12 3.0 70 290 500 200 - 6 5 to +150 V V V mA mW mW °C °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Output Capacitance * Insertion Gain SYMBOL IC B O IE B O hFE fT C ob S 2 1 e 2 30 70 5.0 0.6 12.7 5.0 6.7 1.7 Noise Figure NF 2.6 17 Maximum Available Gain MAG 11 4.0 MIN. TYP. MAX. 0.1 0.1 200 GHz pF dB dB dB dB dB dB VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 5.0 mA VCE = 10 V, IC = 20 mA UNIT TEST CONDITIONS VCB = 15 V, IE = 0 VEB = 2.0 V, IC = 0 VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1.0 MHz f = 1.0 GHz f = 2.0 GHz f = 1.0 GHz f = 2.0 GHz f = 1.0 GHz f = 2.0 GHz
µA µA
* The emitter terminal should be connected to the guard terminal of the three-terminal capacitance bridge.
TYPICAL CHARACTERISTICS (TA = 25 °C)
DC CURRENT GAIN vs. COLLECTOR CURRENT
200 70
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
50 VCE = 10 V
VCE = 10 V
IC-Collector Current-mA
1 5 10 50 70
100
hFE-DC Current Gain
20 10 5
50
2 1
20
10 0.5
0.5 0.5
0.6
0.7
0.8
0.9
IC-Collector Current-mA
VBE-Base to Emitter Voltage-V
5
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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