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Part: 2SK2415-Z
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description: Switching N-channel Power MOSFET Industrial Use
Company: NEC Electronics Inc.
Datasheet: Download 2SK2415-Z datasheet File size : 3443 kB
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2415, 2SK2415-Z
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2415 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.
PACKAGE DIMENSIONS (in millimeters)
+ 0.2 1.5 0.1
6.5 ± 0.2
2.3 ± 0.2 0.5 ± 0.1
FEATURES
1.6 ± 0.2
5.0 ± 0.2 4
RDS(on)1 = 0.10 MAX. (@ VGS = 10 V, ID = 4.0 A) RDS(on)2 = 0.15 MAX. (@ VGS = 4 V, ID = 4.0 A)
123
· Low Ciss
Ciss = 570 pF TYP.
1.3 MAX.
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document n u m b e r IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
2.3 2.3
7.0 MAX. 5.5 ± 0.2 13.7 MIN.
· Low On-Resistance
0.6 ± 0.1
0.6 ± 0.1
1. 2. 3. 4.
Gate Drain Source Fin (Drain)
TO-251 (MP-3)
6.5 ± 0.2
5.0 ± 0.2
+ 0.2 1.5 0.1
0.75
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 °C) Total Power Dissipation (Ta = 25 °C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW 10 µs, Duty Cycle 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 60 ±20 ±8.0 ±32 20 1.0 150 8.0 6.4 V
0.8 4.3 MAX.
2.3 ± 0.2 0.5 ± 0.1
A A W W °C A mJ
12.0
MIN.
1.3 MAX.
0.9
MAX.
0.8
MAX.
2.3 2.3
0.8
55 to +150 °C
1. 2. 3. 4.
Gate Drain Source Fin (Drain)
TO-252 (MP-3Z)
Drain
** Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0
Gate Body Diode
Gate Protection Diode Source
The information in this document is subject to change without notice. Document No. D13207EJ1V1DS00 (1st edition) (Previous No. TC-2496) Date Published December 1997 N CP(K) Printed in Japan
©
0.5
12
3
5.5 ± 0.2
V
10.0 MAX.
1.0 MIN. 1.5 TYP.
4
1994
2SK2415, 2SK2415-Z
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC Drain to Source On-State Resistance Drain to Source On-State Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on)1 RDS(on)2 VG S ( o f f ) | yfs | I DSS IG S S Ciss Coss Crss t d(on) tr t d(off) tf QG Q GS QGD VF(S-D) trr Q rr 570 290 75 5 60 75 40 21 2.0 6.5 1.0 85 200 1.0 5.0 MIN. TYP. 0.07 0.10 1.6 8.4 10 ±10 MAX. 0.10 0.15 2.0 UNIT V S TEST CONDITIONS VGS = 10 V, ID = 4.0 A VGS = 4 V, ID = 4.0 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 4.0 A VDS = 60 V, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 4.0 A VGS(on) = 10 V VDD = 30 V RG = 10 ID = 8.0 A VDD = 48 V VGS = 10 V IF = 8.0 A, VGS = 0 IF = 8.0 A, VGS = 0 di/dt = 100 A/µs
µA µA
pF pF pF ns ns ns ns nC nC nC V ns nC
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
D.U.T. RG = 25 PG VGS = 20 0 V 50
L
D.U.T. RL PG. RG RG = 10 VGS
Wave Form
VGS
10 % 0 VGS (on)
90 %
VDD
VDD ID ID
Wave Form
90 % 90 % 10 % 0 td (on) ton tr
IAS ID VDD
BVDSS VDS
VGS 0 t t = 1 µs Duty Cycle 1 %
ID
10 % td (off) toff tf
Starting Tch
Test Circuit 3 Gate Charge
D.U.T. IG = 2 mA PG. 50
RL VDD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
2SK2415, 2SK2415-Z
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 24 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
20 40 60 80 100 120 140 160
80
20 16 12 8 4
60
40
20
0
0
20
40
60
80
100 120
140
160
Tc - Case Temperature - °C
Tc - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA 100 ID (pulse)
PW
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 40 Pulsed VGS = 10 V VGS = 6 V 24 VGS = 4 V 16
=
10
ID - Drain Current - A
10
1
1
s 10 m s Di DC ss ipa tio n Lim
m
0µ
s
ite
d
ID - Drain Current - A
d ite V) Lim 10 ID (DC) n) (o S = Po G DS R tV we (a r
10
µs
32
8
0.1 0.1
TC = 25 °C Single Pulse 1 10 100 0 2 4 6 8
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed VDS = 10 V
ID - Drain Current - A
100
10
Ta = - 25 °C 25 °C 125 °C
1
0
1
2
3
4
5
6
7
8
VGS - Gate to Source Voltage - V
3
2SK2415, 2SK2415-Z
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
1000 Rth(ch-a) = 125 °C/W 100
10 Rth(ch-c) = 6.25 °C/W 1
0.1 Single Pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
IyfsI- Forward Transfer Admittance - S
100 Ta = - 25 °C 25 °C 75 °C 125 °C
RDS(on) - Drain to Source On-State Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 10 V Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 140 Pulsed 120 100 80 60 40 20 ID = 4.0 A
10
1
0.1
1 ID - Drain Current - A
10
0
5
10
15
20
25
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-State Resistance - m
DRAIN TO SOURCE ON-STATE RESITANCE vs. DRAIN CURRENT
VGS(off) - Gate to Source Cutoff Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 2.0 VDS = 10 V ID = 1 mA 1.5
160 Pulsed 140 120 100 80 VGS = 10 V 60 40 20 0 1 10 ID - Drain Current - A 100 VGS = 4 V
1.0
0.5
0
- 50 - 25 0 25 50 75 100 125 150
Tch - Channel Temperature - °C
4
2SK2415, 2SK2415-Z
RDS(on) - Drain to Source On-State Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 180 100 SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed
140 120 100 80 60 40 20 ID = 4.0 A 0 - 50 0 50 100 150 Tch - Channel Temperature - °C VGS = 10 V VGS = 4 V
ISD - Diode Forward Current - A
160
10 10 V
1
VGS = 0
0
1.0 VSD - Source to Drain Voltage - V
2.0
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 000 1 000
SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 f = 1 MHz
1 000 Ciss
100
td(off)
Coss 100 Crss
tf 10
tr td(on) VDD = 30 V VGS = 10 V RG = 10
10 1 10 VDS - Drain to Source Voltage - V 100
1.0 0.1 1.0 10 ID - Drain Current - A
100
REVERSE RECOVERY TIME vs. DRAIN CURRENT 100 80
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
VDS - Drain to Source Voltage - V
trr - Reverse Recovery time - ns
70 60 50 40 30 20 10 0 10 20 VDS VGS
14 12 10 8 6 4 2 0
10 0.1 1.0
di/dt = 50 A/µ s VGS = 0 10
30
40
ID - Drain Current - A
Qg - Gate Charge - nC
5
VGS - Gate to Source Voltage - V
ID = 8.0 A VDD = 48 V
16
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