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Part: 2SK2857
Category:
Discrete
Description: N-channel MOS Field Effect Transistor For High Speed Switching
Company: NEC Electronics Inc.
Datasheet: Download 2SK2857 datasheet File size : 2624 kB
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2857
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SK2857 is a switching device which can be driven directly by a 5V power source. The 2SK2857 features a low on-state resistance and excellent Switching Characteristics, and is suitable for applications such as actuator driver.
PACKAGE DRAWING (Unit : mm)
4.5±0.1 1.6±0.2 2
4.0±0.25 2.5±0.1
1.5±0.1
Electrode Connection 1.Souce 2.Drain 3.Gate
FEATURES
· Can be driven by a 5V power source. · Low On-state resistance : RDS(on)1 = 220 m MAX. (VGS = 4 V, ID = 1.5 A) RDS(on)2 = 150 m MAX. (VGS = 10 V, ID = 2.5 A)
0.8MIN.
1
0.42 ±0.06
3
0.47 ±0.06
0.42±0.06
1.5 3.0
0 03 0.41+-0..05
Marking : NX
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
60 ±20 ±4 ±16 2 150 -55 to +150
V V A A W °C °C
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation Channel Temperature Storage Temperature
Gate
Internal Diode
Gate Protection Diode
Source
Notes1. PW 10 µs, Duty Cycle 1 % 2. Mounted on ceramic board of 16 cm × 0.7 mm
2
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D11648EJ2V0DS00 (2nd edition) Date Published March 1999 NS CP (K) Printed in Japan
The mark · shows major revised points.
©
1998,1999
2SK2857
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDS = 48 V VGS = 10 V ID = 4 A IF = 4 A, VGS = 0 V IF = 4 A, VGS = 0 V di/dt = 50 A /µs TEST CONDITIONS VDS = 60 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 2 A VGS = 4 V, ID = 1.5 A VGS = 10 V, ID = 2.5 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 25 V, ID = 1 A VGS(on) = 10 V, RG = 10 RL = 25 1.0 1 150 110 265 125 56 8 11 52 22 10.6 0.7 3.5 0.86 49 26.6 220 150 1.4 MIN. TYP. MAX. 10 ±10 2.0 UNIT
µA µA
V S m m pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL PG. RG RG = 10 VDD
ID 90 % 90 % ID 0 10 % td(on) ton tr td(off) toff 10 % tf VGS
IG = 2 mA
VGS(on) 90 %
VGS
Wave Form
RL VDD
0
10 %
PG.
50
VGS 0 = 1µ s Duty Cycle 1 %
ID
Wave Form
2
Data Sheet D11648EJ2V0DS00
2SK2857
TYPICAL CHARACTERISTICS (TA = 25°C)
·
100 80
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA 100
dT - Derating Factor - %
ID - Drain Current - A
10
d ite Lim
60
V (@
S G
0 =1
V)
PW 10 10 0m s m s
=1
m s
40
R
n) (o DS
1
TA = 25°C Single Pulse Mounted on Ceramic 2 Board of 16cm x 0.7mm
DC
20
0
30 60 90 120 TA - Ambient Temperature - °C
150
0.1
1
10
100
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 2.0 8V
ID - Drain Current - A
TRANSFER CHARACTERISTICS 20 10
ID - Drain Current - A
VDS = 10 V
6V 4V
1.6
1.2
1
TA = 125°C 75°C 25°C -25°C
0.8
0.1
0.4
VGS = 2 V
0
0.4
0.8
1.2
1.6
2.0
0.01 1 2 3 4 5 VGS - Gate to Sorce Voltage - V
VDS - Drain to Source Voltage - V
20 VDS = 10 V
| yfs | - Forward Transfer Admittance - S
RDS(on) - Drain to Source On-state Resistance - m
FORWARD TRANSFER ADMMITTANCE Vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 240 200 160 120 80 40 0 0.1 VGS = 4 V TA = 125°C 75°C 25°C -25°C
10
1
TA = -25 °C 25 °C 75 °C 125 °C
0.1 0.1
1
ID - Drain Current - A
10
20
1 ID - Drain Current - A
10
20
Data Sheet D11648EJ2V0DS00
3
2SK2857
RDS (on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 240 200
TA = 125°C
RDS(on) - Drain to Source On-State Resistance - m
VGS = 10 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1000
800
160 120 80 40 0 0.1
75°C 25°C -25°C
600
400 200
ID = 2.5 A 1.5 A
0 2 4 6 8 10 12 14 16
1 ID - Drain Current - A
10
20
VGS - Gate to Source Voltage - V
1000
Ciss, Coss, Crss - Capacitance - pF
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
f = 1 MHz
SWITCHING CHARACTERISTICS 1000
Ciss 100 Coss
td(on), tr, td(off), tf - Swwitchig Time - ns
100
tr td(off) tf
10
td(on)
Crss
10 1
10
VDS - Drain Source Voltage - V
100
0.1 0.1
1 ID - Drain Current - A
10
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 20
VGS = 0 V
IF - Source to Drain Current - A
VDS - Drain to Source Voltage - V
1
30 20 10
VDS
6 4 2 0 12
0.1 0.6
0.8 1.0 1.2 1.4 1.6 1.8 VF(S-D) - Source to Drain Voltage - V
2.0
0
2
4
6
8
10
Qg - Gate Charge - nC
4
Data Sheet D11648EJ2V0DS00
VGS - Gate to Source Voltage - V
10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 12 60 ID = 4 A VGS 50 10 VDD = 12 V 30 V 40 8 48 V
2SK2857
[MEMO]
Data Sheet D11648EJ2V0DS00
5
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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