|
Details, datasheet, quote on part number:NE71300-M
| |
Datasheet text preview:
DATA SHEET
GaAs MES FET
NE713
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
FEATURES
x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm
ORDERING INFORMATION
PART NUMBER NE71300-N NE71300-M NE71300-L NE71383B I DSS (mA) 20 to 50 50 to 80 80 to 120 20 to 120 83B PACKAGE CODE 00 (CHIP)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGSO VGDO ID Pt o t Tch Tstg 5.0 ð5.0 ð6.0 IDSS 270 400 175 ð65 to +175 V V V mA mW mW °C °C [NE71383B] [NE71300]
RECOMMENDED OPERATING CONDITION (TA = 25 °C)
CHARACTERISTIC Drain to Source Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN. TYP. 3 10 MAX. 4 30 15 Unit V mA dBm
Document No. P11691EJ2V0DS00 (2nd edition) Date Published February 1997 N Printed in Japan
©
1996
NE713
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC Gate to Source Leak Current Saturated Drain Current Gate to Source Cut off Voltage Transconductance Noise Figure Associated Gain Noise Figure Associated Gain Output Power at 1 dB Gain Compression Point Thermal Resistance Rth 190 450 °C/W °C/W NE71300 NE71383B SYMBOL IGSO IDSS VGS (off) gm NF Ga NF Ga Po (1 dB) 8.0 11.5 MIN. - 20 -0.5 20 TYP. 1.0 40 -1.1 50 0.6 14.0 1.6 9.5 14.5 1.8 MAX. 10 120 -3.5 - 0.7 UNIT TEST CONDITIONS VGS = -5 V VDS = 3 V, VGS = 0 V VDS = 3 V, ID = 100 µA VDS = 3 V, ID = 10 mA f = 4 GHz VDS = 3 V ID = 10 mA f = 12 GHz
µA
mA V mS dB dB dB dB dBm
f = 12 GHz
VDS = 3 V ID = 30 mA Channel to case
PACKAGE DIMENSIONS (Unit : mm) [NE71383B] 1.88 ± 0.3 1 4.0 MIN. 4.0 MIN. 1.88 ± 0.3 2 4 4.0 MIN.
4.0 MIN. 0.5 ± 0.1
- 0 07 0.1 +0..03
3 1.45 MAX. 1.0 ± 0.1
2D 1. Source 3. S rain 4. Gource . ate
2
NE713
CHIP DIMENSIONS (Unit: µm) [NE71300]
450 123 64 76 60
122
1
Source
Source
70
6
7
18 57 56
48 44 2
hickness = 140 µm : BONDING AREA
T
5
118
20
4
Gate
Gate
0
400
5
Drain
Drain
52 4
3
|
|
