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Details, datasheet, quote on part number:NNCD12A
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Datasheet text preview:
DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3A to NNCD12A
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (400 mW TYPE)
This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV. Type NNCD2.0A to NNCD12A Series is into DO-34 Package (Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode) construction having allowable power dissipation of 400 mW.
0.4
25 MIN.
Cathode indication
PACKAGE DIMENSIONS
(in millimeters)
FEATURES
· Based on the electrostatic discharge immunity test (IEC1000-42), the product assures the minimum endurance of 30 kV. · Based on the reference supply of the set, the product achieves a series over a wide range (15 product name lined up). · DHD (Double Heatsink Diode) construction.
2.0 MAX.
APPLICATIONS
· Circuit E.S.D protection. · Circuits for Waveform clipper, Surge absorber.
MAXIMUM RATINGS (TA = 25 °C)
Power Dissipation Surge Reverse Power Junction Temperature Storage Temperature P PRSM Tj T stg 400 mW 100 W (tT = 10 µs 1 pulse) 175 °C 65 °C to +175 °C Fig. 7
Document No. D11769EJ2V0DS00 (2nd edition) Date Published December 1996 N Printed in Japan
25 MIN.
2.4 MAX.
©
1996
NNCD3.3A to NNCD12A
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Dynamic ImpedanceNote 2 Zz () MAX. 120 120 120 120 120 100 70 40 30 25 20 20 20 20 25 IT (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5
Breakdown VoltageNote 1 VBR (V) Type Number MIN. NNCD3.3A NNCD3.6A NNCD3.9A NNCD4.3A NNCD4.7A NNCD5.1A NNCD5.6A NNCD6.2A NNCD6.8A NNCD7.5A NNCD8.2A NNCD9.1A NNCD10A NNCD11A NNCD12A 3.16 3.47 3.77 4.05 4.47 4.85 5.29 5.81 6.32 6.88 7.56 8.33 9.19 10.18 11.13 MAX. 3.53 3.83 4.14 4.53 4.91 5.35 5.88 6.40 6.97 7.64 8.41 9.29 10.3 11.26 12.30 IT (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5
Reverse Leakage IR (µA)
Capacitance Ct (pF) TEST CONDITION
E.S.D Voltage (kV) TEST CONDITION
MAX. 20 10 5 5 5 5 5 5 2 0.5 0.5 0.5 0.2 0.2 0.2
VR (V) 1.0 1.0 1.0 1.0 1.0 1.5 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0
TYP. 220 210 200 180 170 160 140 120 110 90 90 90 80 70 70
MIN. 30 30 30 30 30 30
C = 150 pF R = 330 (IEC1000 -4-2)
VR = 0 V f = 1 MHz
30 30 30 30 30 30 30 30 30
Notes 1. Tested with pulse (40 ms) 2. Zz is measured at IT give a small A.C. signal.
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NNCD3.3A to NNCD12A
TYPICAL CHARACTERISTICS (TA = 25 °C)
Fig. 1 POWER DISSIPATION vs. AMBIENT TEMPERATURE
600 Rth - Thermal Resistance - °C/W P - Power Dissipation - mW 500 400 = 10 mm 300 200 100 P.C Board 3 mm = 3 mm t = 0.035 0 0 20 40 60 80 100 120 140 160 180 200 TA - Ambient Temperature - °C = 5 mm = 10 mm = 5 mm = 3 mm 600 500 400 300 200 100 0 S = 10 mm = 5 mm = 3 mm
Fig. 2 THERMAL RESISTANCE vs. SIZE OF P.C BOARD
Junction to anbient
P.C Board 7 mm t = 0.035 mm
0
20
40
60
80
100
S - Size of P.C Board - mm2
Fig. 3 IT - VBR CHARACTERISTICS
Fig. 4 IT - VBR CHARACTERISTICS
NNCD7.5A NNCD6.8A 100 m NNCD3.3A 10 m NNCD3.6A NNCD3.9A NNCD4.3A 1m NNCD4.7A 100 µ 10 µ 1µ NNCD5.1A NNCD5.6A 10 n NNCD6.2A
NNCD8.2A NNCD9.1A 100 m NNCD10A 10 m NNCD11A NNCD12A
IT - On State Current - A
IT - On State Current - A
1m 100 µ 10 µ 1µ
100 n
100 n
10 n
1n 0 1 2 3 4 5 6 7 8 9 10 VBR - Breakdown Voltage - V
1n 0 7 8 9 10 11 12 13 14 15 VBR - Breakdown Voltage - V
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