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Details, datasheet, quote on part number:NNCD3.3B
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Datasheet text preview:
DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3B to NNCD12B
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (500 mW TYPE)
This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV. Type NNCD2.0B to NNCD12B Series is into DO-35 Package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW.
0.5
25 MIN.
Cathode indication
PACKAGE DIMENSIONS
(in millimeters)
FEATURES
· Based on the electrostatic discharge immunity test (IEC1000-42), the product assures the minimum endurance of 30 kV. · Based on the reference supply of the set, the product achieves a series over a wide range (15 product name lined up). · DHD (Double Heatsink Diode) construction.
2.0 MAX.
APPLICATIONS
· Circuit E.S.D protection. · Circuits for Waveform clipper, Surge absorber.
MAXIMUM RATINGS (TA = 25 °C)
Power Dissipation Surge Reverse Power Junction Temperature Storage Temperature P P RSM Tj T stg 500 mW 100 W (tT = 10 µs 1 pulse) 175 °C 65 °C to +175 °C Fig. 7
Document No. D11770EJ2V0DS00 (2nd edition) Date Published December 1996 N Printed in Japan
25 MIN.
4.2 MAX.
©
1996
NNCD3.3B to NNCD12B
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Dynamic ImpedanceNote 2 Zz () MAX. 70 60 50 40 25 20 13 10 8 8 8 8 8 10 10 IT (mA) 20 20 20 20 20 20 20 20 20 20 20 20 20 10 10
Breakdown VoltageNote 1 VBR (V) Type Number MIN. NNCD3.3B NNCD3.6B NNCD3.9B NNCD4.3B NNCD4.7B NNCD5.1B NNCD5.6B NNCD6.2B NNCD6.8B NNCD7.5B NNCD8.2B NNCD9.1B NNCD10B NNCD11B NNCD12B 3.16 3.47 3.77 4.05 4.47 4.85 5.29 5.81 6.32 6.88 7.56 8.33 9.19 10.18 11.13 MAX. 3.53 3.83 4.14 4.53 4.91 5.35 5.88 6.40 6.97 7.64 8.41 9.29 10.3 11.26 12.30 IT (mA) 20 20 20 20 20 20 20 20 20 20 20 20 20 10 10
Reverse Leakage IR (µA)
Capacitance Ct (pF) TEST CONDITION
E.S.D Voltage (kV) TEST CONDITION
MAX. 20 10 5 5 5 5 5 5 2 0.5 0.5 0.5 0.2 0.2 0.2
VR (V) 1.0 1.0 1.0 1.0 1.0 1.5 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0
TYP. 240 230 220 210 190 160 140 120 110 90 90 90 80 70 70
MIN. 30 30 30 30 30 30
C = 150 pF R = 330 (IEC1000 -4-2)
VR = 0 V f = 1 MHz
30 30 30 30 30 30 30 30 30
Notes 1. Tested with pulse (40 ms) 2. Zz is measured at IT give a small A.C. signal.
2
NNCD3.3B to NNCD12B
TYPICAL CHARACTERISTICS (TA = 25 °C)
Fig. 1 POWER DISSIPATION vs. AMBIENT TEMPERATURE
600
Rth - Thermal Resistance - °C/W
Fig. 2 THERMAL RESISTANCE vs. SIZE OF P.C BOARD
600 500 400 300 = 10 mm 200 100 0 = 5 mm S Junction to anbient
P - Power Dissipation - mW
500 400 300 200 100 0 10 mm P.C Board 3 mm t = 0.035 mm
= 5 mm = 10 mm
P.C Board 7 mm t = 0.035 mm
0
20
40
60
80 100 120 140 160 180 200
0
20
40
60
80
2
100
TA - Ambient Temperature - °C
S - Size of P.C Board - mm
Fig. 3 IT - VBR CHARACTERISTICS
NNCD5.6B NNCD5.1B 100 m NNCD3.3B NNCD3.6B 10 m NNCD3.9B NNCD4.3B NNCD4.7B 1m IT - On State Current - A TA = 25 °C NNCD6.8B TYP. NNCD6.2B NNCD7.5B NNCD8.2B NNCD9.1B
Fig. 4 IT - VBR CHARACTERISTICS
TA = 25 °C TYP. 100 m NNCD11B NNCD12B NNCD10B
10 m
1m IT - On State Current - A
100 µ
100 µ
10 µ
10 µ
1µ
1µ
100 n
100 n
10 n
10 n
1n 0 1 2 3 4 5 6 7 8 9 VBR - Breakdown Voltage - V
1n 0 7 8 9 10 11 12 13 14 15 VBR - Breakdown Voltage - V
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