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Details, datasheet, quote on part number:NNCD3.3G
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| Part: | NNCD3.3G |
| Category: | Discrete => Diodes & Rectifiers => PIN Diodes |
| Description: | Electrostatic Discharge Noise Clipping Diodes Quarto Type : Common Anode 5 Pin Mini Mold |
| Company: | NEC Electronics Inc. |
| Datasheet: | Download NNCD3.3G datasheet File size : 41 kB |
| Request For quote: | Find where to buy NNCD3.3G
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Datasheet text preview:
DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3G to NNCD7.5G, NNCD27G
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (QUARTO TYPE : COMMON ANODE) 5 PIN MINI MOLD
This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 30 KV, thus making itself most suitable for external interface circuit protection. With four elements mounted in the 5 PIN Mini Mold Package, the product can cope with high density and automatic packaging.
PACKAGE DIMENSIONS
(in millimeters)
2.8 ± 0.2
01 0.32 +0..06
1.5
01 0.65 +0..15
1.9
FEATURES
· Based on the electrostatic discharge immunity test (IEC1000-42), the product assures the minimum endurance of 30 KV. · Based on the reference supply of the set, the product achieves a series over a wide range (11 product name lined up). · With 4 elements mounted (common anode) mounted in the 5 PIN automatic packaging. MINI MOLD package, the product can achieve a high density and
2.9 ± 0.2
0.95
1
5
0.95
2
3
4
1.1 to 1.4
· External interface circuit E.S.D protection. · Circuits for Waveform clipper, Surge absorber.
(5 PIN mini MOLD)
MAXIMUM RATINGS (TA = 25 °C)
Power Dissipation Surge Reverse Power Junction Temperature Storage Temperature P P RSM Tj T stg 200 mW 85 W (t = 10 µs 1 pulse) 150 °C 55 °C to +150 °C (Total) Fig. 5
5
(SC-74A)
PIN CONNECTION
4 1 2 3 4 5 1 2 3 : : : : : K1 A K2 K3 K4 Cathode 1 Anode (common) Cathode 2 Cathode 3 Cathode 4
Document No. D11645EJ1V1DS00 (1st edition) Date Published February 1998 N CP(K) Printed in Japan
0 to 0.1
APPLICATIONS
0.8
©
01 0.16 +0..06
5 1996
NNCD3.3G to NNCD7.5G, NNCD27G
ELECTRICAL CHARACTERISTICS (TA = 25 °C) (A-K1, A-K2, A-K3, A-K4)
Dynamic** Impedance Zz () MAX. 130 130 130 130 130 130 80 50 30 30 70 IT (mA) 5 5 5 5 5 5 5 5 5 5 2 Reverse Leakage IR (µA) MAX. 20 10 10 10 10 5 5 2 2 2 2 VR (V) 1.0 1.0 1.0 1.0 1.0 1.5 2.5 3.0 3.5 4.0 21
Parameter
Breakdown Voltage* VBR (V)
Capacitance Ct (pF) Test Condition
E.S.D Voltage (KV) Test Condition
MIN. NNCD3.3G NNCD3.6G NNCD3.9G NNCD4.3G NNCD4.7G NNCD5.1G NNCD5.6G NNCD6.2G NNCD6.8G NNCD7.5G NNCD27G 3.10 3.40 3.70 4.01 4.42 4.84 5.31 5.86 6.47 7.06 25.10
MAX. 3.50 3.80 4.10 4.48 4.90 5.37 5.92 6.53 7.14 7.84 28.90
IT (mA) 5 5 5 5 5 5 5 5 5 5 2
TYP. 220 210 200 180 170 160 140 120 110 90 25
MIN. 30 30 30 30 30
C = 150 pF R = 330 (IEC1000 -4-2)
VR = 0 V f = 1 MHz
30 30 30 30 30 30
* **
Tested with pulse (40 ms) Zz is measured at IT give a small A.C. signal.
2
NNCD3.3G to NNCD7.5G, NNCD27G
TYPICAL CHARACTERISTICS (TA = 25 °C)
Fig. 1 P - TA RATING 250 NNCD6.8G 100 m
P - Power Dissipation - mW
Fig. 2 It - VBR CHARACTERISTICS (A-K1, A-K2, A-K3, A-K4) NNCD7.5G
200 10 m 150
IT - On state Current - A
NNCD3.3G NNCD3.6G
1m NNCD3.9G 100 µ 10 µ 1µ 100 n NNCD4.3G 10 n NNCD4.7G NNCD6.2G NNCD5.1G NNCD5.6G 1 2 3 4 5 6 7 8 9 10
100
50
0
25
50
75
100
125
150
TA - Ambient Temperature - °C
1n 0
VBR - Breakdown Voltage - V Fig. 3 ZT - IT CHARACTERISTICS 1 000 TYP.
NNCD3.9G 100 NNCD5.6G
Zz -
NNCD4.7G NNCD5.1G
10 NNCD7.5G
1 0.1 1 10 100 IT - On state Current - A
3
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