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Details, datasheet, quote on part number:NNCD3.6C
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Datasheet text preview:
DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3C to NNCD12C
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (150 mW TYPE)
This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV, thus making itself most suitable for external interface circuit protection. Type NNCD3.3C to NNCD12C Series are into 2PIN Ultra Super Mini Mold Package having allowable power dissipation of 150 mW.
PACKAGE DIMENSIONS
(in millimeters)
2.1 ± 0.1 1.3 ± 0.1 0.3 ± 0.05 0.8 ± 0.1 0.15
FEATURES
· Based on the electrostatic discharge immunity test (IEC1000-42), the product assures the minimum endurance of 30 kV. · Based on the reference supply of the set, the product achieves a series over a wide range (15 product name lined up).
Cathode Indication
APPLICATIONS
0 ± 0.05
· Circuits for Waveform clipper, Surge absorber.
MAXIMUM RATINGS (TA = 25 °C)
Power Dissipation Surge Reverse Power Junction Temperature Storage Temperature P P RSM Tj T stg 150 mW 85 W (tT = 10 µs 1 pulse) 150 °C 55 °C to +150 °C Fig. 6
Document No. D11771EJ2V0DS00 (2nd edition) Date Published December 1996 N Printed in Japan
©
0.11+0..05 0 01
· External interface circuit E.S.D protection.
0.7 ± 0.1
1996
NNCD3.3C to NNCD12C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Dynamic ImpedanceNote 2 Zz () MAX. 130 130 130 130 130 130 80 50 30 30 30 30 30 30 35 IT (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5
Breakdown VoltageNote 1 VBR (V) Type Number MIN. NNCD3.3C NNCD3.6C NNCD3.9C NNCD4.3C NNCD4.7C NNCD5.1C NNCD5.6C NNCD6.2C NNCD6.8C NNCD7.5C NNCD8.2C NNCD9.1C NNCD10C NNCD11C NNCD12C 3.10 3.40 3.70 4.00 4.40 4.82 5.29 5.84 6.44 7.03 7.73 8.53 9.42 10.40 11.38 MAX. 3.50 3.80 4.10 4.49 4.92 5.39 5.94 6.55 7.17 7.87 8.67 9.58 10.58 11.60 12.64 IT (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5
Reverse Leakage IR (µA)
Capacitance Ct (pF) TEST CONDITION
E.S.D Voltage (kV) TEST CONDITION
MAX. 20 10 10 10 10 5 5 5 2 2 2 2 2 2 2
VR (V) 1.0 1.0 1.0 1.0 1.0 1.5 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0
TYP. 220 210 200 180 170 160 140 120 110 90 90 90 80 70 70
MIN. 30 30 30 30 30 30
C = 150 pF R = 330 (IEC1000 -4-2)
VR = 0 V f = 1 MHz
30 30 30 30 30 30 30 30 30
Notes 1. Tested with pulse (40 ms) 2. Zz is measured at IT give a small A.C. signal.
2
NNCD3.3C to NNCD12C
TYPICAL CHARACTERISTICS (TA = 25 °C)
Fig. 1 POWER DISSIPATION vs. AMBIENT TEMPERATURE
200 30 × 30 × 0.75 P.C.B. (Ceramic)
P - Power Dissipation - mW
150
20 × 15 × 0.75 P.C.B. (Ceramic) 10 × 7.5 × 0.75 P.C.B. (Ceramic)
100
10 × 7.5 × 0.75 P.C.B. (Glass Epoxy)
50
0
0
50
100
150
200
TA - Ambient Temperature - °C
Fig. 2 IT - VBR CHARACTERISTICS
NNCD7.5C NNCD8.2C NNCD6.8C NNCD9.1C
Fig. 3 IT - VBR CHARACTERISTICS
100 m NNCD3.3C NNCD3.6C 10 m NNCD3.9C NNCD4.3C IT - On State Current - A 1m NNCD4.7C 100 µ 10 µ 1µ 100 n 10 n 1n NNCD5.1C
100 m 10 m IT - On State Current - A 1m 100 µ 10 µ 1µ 100 n 10 n 1n
NNCD11C NNCD10C NNCD12C
NNCD5.6C NNCD6.2C
0
1
2
3
4
5
6
7
8
9 10
0
7
8
9 10 11 12 13 14 15
VBR - Breakdown Voltage - V
VBR - Breakdown Voltage - V
3
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