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Details, datasheet, quote on part number:NNCD3.6E
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Datasheet text preview:
DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3E to NNCD12E
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (200 mW TYPE)
This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endur-
PACKAGE DIMENSIONS
(in millimeters)
0.4 0.05
2.8 ± 0.2 1.5 0.65 0.15
+0.1
external interface circuit protection. Type NNCD3.3E to NNCD12E Series are into 3PIN Mini Mold
0.95 2.9 ± 0.2
Package having allowable power dissipation of 200 mW.
+0.1
ance of no less than 30 kV, thus making itself most suitable for
2 3
· Based on the electrostatic discharge immunity test (IEC1000-42), the product assures the minimum endurance of 30 kV. · Based on the reference supply of the set, the product achieves a series over a wide range (15 product name lined up).
Marking
0.3
APPLICATIONS
· External interface circuit E.S.D protection. · Circuits for Waveform clipper, Surge absorber.
1.1 to 1.4
MAXIMUM RATINGS (TA = 25 °C)
Power Dissipation Surge Reverse Power Junction Temperature Storage Temperature P P RSM Tj T stg 200 mW 100 W (tT = 10 µs 1 pulse) 150 °C 55 °C to +150 °C Fig. 6
PIN CONNECTION 1. NC 2. Anode 3. Cathode SC-59 (EIAJ)
Document No. D11773EJ2V0DS00 (2nd edition) Date Published December 1996 N Printed in Japan
0 to 0.1
©
0.16 0.06
+0.1
0.4 0.05
FEATURES
0.95
+0.1
1
1996
NNCD3.3E to NNCD12E
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Dynamic ImpedanceNote 2 Zz () MAX. 130 130 130 130 130 130 80 50 30 30 30 30 30 30 35 IT (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5
Breakdown VoltageNote 1 VBR (V) Type Number MIN. NNCD3.3E NNCD3.6E NNCD3.9E NNCD4.3E NNCD4.7E NNCD5.1E NNCD5.6E NNCD6.2E NNCD6.8E NNCD7.5E NNCD8.2E NNCD9.1E NNCD10E NNCD11E NNCD12E 3.10 3.40 3.70 4.01 4.42 4.84 5.31 5.86 6.47 7.06 7.76 8.56 9.45 10.44 11.42 MAX. 3.50 3.80 4.10 4.48 4.90 5.37 5.92 6.53 7.14 7.84 8.64 9.55 10.55 11.56 12.60 IT (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5
Reverse Leakage IR (µA)
Capacitance Ct (pF) TEST CONDITION
E.S.D Voltage (kV) TEST CONDITION
MAX. 20 10 10 10 10 5 5 2 2 2 2 2 2 2 2
VR (V) 1.0 1.0 1.0 1.0 1.0 1.5 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0
TYP. 220 210 200 180 170 160 140 120 110 90 90 90 80 70 70
MIN. 30 30 30 30 30 30
C = 150 pF R = 330 (IEC1000 -4-2)
VR = 0 V f = 1 MHz
30 30 30 30 30 30 30 30 30
Notes 1. Tested with pulse (40 ms) 2. Zz is measured at IT give a small A.C. signal.
2
NNCD3.3E to NNCD12E
TYPICAL CHARACTERISTICS (TA = 25 °C)
Fig. 1 POWER DISSIPATION vs. AMBIENT TEMPERATURE
250
P - Power Dissipation - mW
200
150
100
50
0
0
25
50
75
100
125
150
TA - Ambient Temperature - °C
Fig. 2 IT - VBR CHARACTERISTICS
NNCD7.5E NNCD8.2E NNCD6.8E NNCD9.1E
Fig. 3 IT - VBR CHARACTERISTICS
100 m NNCD3.3E NNCD3.6E 10 m NNCD3.9E NNCD4.3E IT - On State Current - A 1m NNCD4.7E 100 µ 10 µ 1µ 100 n 10 n 1n NNCD5.1E
100 m NNCD10E 10 m IT - On State Current - A 1m 100 µ 10 µ 1µ 100 n 10 n 1n
NNCD11E NNCD12E
NNCD5.6E NNCD6.2E
0
1
2
3
4
5
6
7
8
9 10
0
7
8
9 10 11 12 13 14 15
VBR - Breakdown Voltage - V
VBR - Breakdown Voltage - V
3
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