|
Details, datasheet, quote on part number:PS2503-1
| |
Datasheet text preview:
DATA SHEET
PHOTOCOUPLERS
P S2503 -1, -2, -4 PS2503L-1, -2, -4
LOW INPUT CURRENT, HIGH SPEED SWITCHING MULTI PHOTOCOUPLER SERIES
DESCRIPTION
PS2503-1, -2, -4 and PS2503L-1, -2, -4 series are optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. PS2503-1, -2, -4 are in a plastic DIP (Dual In-line Package) and PS2503L-1, -2, -4 are lead bending type (Gullwing) for surface mount.
FEATURES
· High isolation voltage (BV: 5 000 Vr.m.s. MIN.) · High speed switching (tr = 20 µs, tf = 30 µs TYP., @RL = 10 k) · High current transfer ratio (CTR: 100 % MIN. @IF = 1 mA, VCE = 5 V) · Taping Product number (PS2503L-1-E3, E4, F3, F4) (PS2503L-2-E3, E4) · UL recognized [File No. E72422(S)]
APPLICATIONS
Interface circuit for various instrumentations, control equipments. · AC Line/Digital Logic ........ Isolate high voltage transients · Digital Logic/Digital Logic .......... Eliminate spurious ground loops · Twisted pair line receiver .......... Eliminate ground look pick-up · Telephone/Telegraph line receiver .... Isolate high voltage transients · High Frequeny Power Supply Feedback Control ...... Maintain floating ground · Relay Contact Monitor ...... Isolate floating grounds and transients · Power Supply Monitor ...... Isolate transients and ground systems
Document No. P11304EJ3V0DS00 (3rd edition) (Previous No. LC-2305A) Date Published February 1996 P Printed in Japan
©
1993
PS2503-1, -2, -4, PS2503L-1, -2, -4
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
(PS2503-1) (PS2503L-1) Diode Reverse Voltage Forward Current (DC) Power Dissipation Derating Power Dissipation Peak Forward Current (PW = 100 µs, Duty Cycle 1 %) Transistor Collector to Emitter Voltage Emitter to Collector Voltage Collector Current Power Dissipation Derating Power Dissipation Coupled Isolation Voltage*1 Storage Temperature Operating Temperature Lead Temperature (Soldering 10 s) BV Ts t g To p t Ts o l 5 000 55 to +150 55 to +100 260 5 000 55 to +150 55 to +100 260 V r.m.s. °C °C °C VCEO VECO IC P C/ ° C PC 40 0.6 30 1.5 150 40 0.6 30 1.2 120 V V mA mW/°C mW/Channel VR IF P D/ ° C PD IF(Peak) 6 80 1.5 150 1 6 80 1.2 120 1 V mA mW/°C mW/Channel A (PS2503-2, 4) (PS2503L-2, 4)
*1 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output.
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER Forward Voltage Diode Reverse Current Junction Capacitance Transistor Collector to Emitter Dark Current Current Transfer Ratio*2 Collector Saturation Voltage Coupled Isolation Resistance Isolation Capacitance Rise Fall Time*3 SYMBOL VF IR Ct ICEO CTR VC E ( s a t ) R1-2 C1-2 tr tf 1 0 11 0.5 20 30 100 200 50 100 400 0.25 MIN. TYP. 1.1 MAX. 1.3 5 UNIT V TEST CONDITIONS IF = 1 mA VR = 5 V V = 0, f = 1 MHz VCE = 40 V, IF = 0 IF = 1 mA, VCE = 5 V IF = 1 mA, IC = 0.2 mA Vin-out = 1 kV V = 0, f = 1 MHz VCC = 5 V, IF = 1 mA, RL = 10 k VCC = 5 V, IF = 1 mA, RL = 10 k
µA
pF nA % V pF
µs µs
Time*3
*2 CTR rank (only PS2503-1, PS2503L-1) K : 200 to 400 L : 150 to 300 M : 100 to 200
*3 Test Circuit for Switching Time
PULSE INPUT PW = 100 µ s Duty Cycle = 1/10 VCC
IF VOUT 50 RL = 10 k
2
PS2503-1, -2, -4, PS2503L-1, -2, -4
TYPICAL CHARACTERISTICS (TA = 25 °C)
DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE 150
PC - Transistor Power Dissipation - mW
TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 150
PD - Diode Power Dissipation - mW
PS2503-1 PS2503L-1 100 1.5 mW / °C PS2503-2 PS2503-4 PS2503L-2 PS2503L-4 50 1.2 mW / °C
PS2503-1 PS2503L-1 100 1.5 mW / °C PS2503-2 PS2503-4 PS2503L-2 PS2503L-4 50 1.2 mW / °C
0
25
50
75
100
125
150
0
25
TA - Ambient Temperature - °C FORWARD CURRENT vs. FORWARD VOLTAGE 100 50
IC - Collector Current - mA
50 75 100 125 TA - Ambient Temperature - °C
150
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 12
10 5 mA 100 °C 60 °C 25 °C 0 °C 25 °C 55 °C
4 mA 3 mA 2 mA
IF - Forward Current - mA
10 5
8
6 1.5 mA 4 1 mA 0.8 mA IF = 0.6 mA 2 4 6 8 10
1 0.5
0.1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
2
VF - Forward Voltage - V
0
VCE - Collector to Emitter Voltage - V COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE 100
ICEO - Collector to Emitter Dark Current - nA
COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 30 10 mA
50 10
IC - Collector Current - mA
10 5.0
VCE = 40 V 30 V 20 V 10 V
5 mA 5 2 mA 1 mA 1.0 0.5 IF = 0.8 mA
1.0
0.3
0.1 25 0 25 50 75 100 0 0.2 0.4 0.6 0.8 1.0 TA - Ambient Temperature - °C VCE(sat) - Collector tSaturation Voltage - V
3
|
|
