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Details, datasheet, quote on part number:UPA1759
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| Part: | UPA1759 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | Switching N-channel Power MOSFET Industrial Use |
| Company: | NEC Electronics Inc. |
| Datasheet: | Download UPA1759 datasheet File size : 39 kB |
| Request For quote: | Find where to buy UPA1759
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Datasheet text preview:
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1759
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
PACKAGE DRAWING (Unit : mm)
8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37 Max.
+0.10 0.05
DESCRIPTION
This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters.
FEATURES
· Dual chip type · Low on-resistance RDS(on)1 = 110 m TYP. (VGS = 10 V, ID = 2.5 A)
1.44
6.0 ±0.3 4.4 0.8
RDS(on)2 = 170 m TYP. (VGS = 4 V, ID = 2.5 A) · Built-in G-S protection diode · Small and surface mount package (Power SOP8)
1.8 Max.
· Low input capacitance Ciss = 190 pF TYP.
0.15
0.05 Min.
0.5 ±0.2 0.10
1.27 0.40
0.78 Max. 0.12 M
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
+0.10 0.05
µPA1759G
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.)
Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain Current (pulse) Note2 Total Power Dissipation (1 unit) Total Power Dissipation (2 unit) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3 Note2 Note1
VDSS VGSS ID(DC) ID(pulse) PT PT Tch T stg IAS EAS
60 ±20 ±5.0 ±20 1.7 2.0 150 55 to + 150 2.5 0.625
V V A A W W °C °C A mJ
EQUIVALENT CIRCUIT
(1/2 Circuit)
Drain
Gate
Body Diode
Notes 1. PW 10 µs, Duty cycle 1 % 2 2. Mounted on ceramic substrate of 1200 mm x 1.7 mm 3. Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0 V Remark
Gate Protection Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD. W hen this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G13622EJ1V0DS00 (1st edition) Date Published May 1999 NS CP(K) Printed in Japan
©
1999
µ PA1759
ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 2.5 A VGS = 4 V, ID = 2.5 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 2.5 A VDS = 60 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 2.5 A VGS(on) = 10 V VDD = 15 V RG = 10 ID = 5.0 A VDD = 24 V VGS = 10 V IF = 5.0 A, VGS = 0 V IF = 5.0 A, VGS = 0 V di/dt = 100 A/µs 190 100 36 6 50 80 50 8 1 2.4 0.9 40 50 1.0 2.0 MIN. TY P . 110 170 1.7 3.9 10 ±10 MAX. 150 240 2.5 UNIT m m V S
µA µA
pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG RG = 10
VGS RL VDD ID
90 % 90 % ID
VGS
Wave Form
0
10 %
VGS(on)
90 %
BVDSS IAS ID VDD VDS
VGS 0 = 1 µs Duty Cycle 1 %
ID
Wave Form
0
10 % td(on) ton tr td(off) toff
10 % tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet G13622EJ1V0DS00
µ PA1759
[MEMO]
Data Sheet G13622EJ1V0DS00
3
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