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Details, datasheet, quote on part number:UPA1760
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| Part: | UPA1760 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | Switching N-channel Power MOSFET Industrial Use |
| Company: | NEC Electronics Inc. |
| Datasheet: | Download UPA1760 datasheet File size : 70 kB |
| Request For quote: | Find where to buy UPA1760
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Datasheet text preview:
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1760
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The µPA1760 is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers.
PACKAGE DRAWING (Unit : mm)
8 5 1 2 7, 8 3 4 5, 6 ; Source1 ; Gate1 ; Drain1 ; Source2 ; Gate2 ; Drain2 6.0 ±0.3 4.4
+0.10 0.05
FEATURES
· Dual Chip Type
1.44
· Low On-Resistance 5 5 5 RDS(on)1 = 26.0 m MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 36.0 m MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)3 = 42.0 m MAX. (VGS = 4.0 V, ID = 4.0 A) · Low Ciss : Ciss = 760 pF TYP. · Built-in G-S Protection Diode · Small and Surface Mount Package (Power SOP8)
1.8 Max.
1 5.37 Max.
4
0.8
0.15
0.05 Min.
0.5 ±0.2 0.10
1.27 0.40
0.78 Max. 0.12 M
+0.10 0.05
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse)
Note1 Note2 Note2
VDSS VGSS ID(DC) ID(pulse) PT PT Tch T stg
30 ±20 ±8.0 ±32 1.7 2.0 150 55 to + 150 8 6.4
V V A A W W °C °C A mJ
Gate Body Diode Drain
EQUIVALENT CIRCUIT (1/2 Circuit)
Total Power Dissipation (1 unit) Total Power Dissipation (2 unit) Channel Temperature Storage Temperature 5 5 Single Avalanche Current Single Avalanche Energy
Note3 Note3
IAS EAS
Gate Protection Diode
Source
Notes 1. PW 10 µs, Duty cycle 1 % 5 5 2. TA = 25 °C, Mounted on ceramic substrate of 2000 mm x 1.6 mm 3. Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0 V Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. W hen this device actually used, an additional protection circuit is externally required if a voltage Exceeding the rated voltage may be applied to this device.
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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G13891EJ1V0DS00 (1st edition) Date Published November 1999 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
©
1998,1999
µPA1760
5 ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 4.0 A VGS = 4.5 V, ID = 4.0 A VGS = 4.0 V, ID = 4.0 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 4.0 A VDS = 30 V, VGS = 0 V VGS = ±16 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 4.0 A VGS(on) = 10 V VDD = 15 V RG = 10 ID = 8.0 A VDD = 24 V VGS = 10 V IF = 8.0 A, VGS = 0 V IF = 8.0 A, VGS = 0 V di/dt = 100A/µs 760 250 95 20 140 50 30 14 2.0 5.0 0.86 30 20 1.5 3.0 MIN. TY P . 20.5 27.0 31.0 2.1 7.5 10 ±10 MAX. 26.0 36.0 42.0 2.5 UNIT m m m V S
µA µA
pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG RG = 10
VGS RL VDD ID
90 % 90 % ID
VGS
Wave Form
0
10 %
VGS(on)
90 %
BVDSS IAS ID VDD VDS
VGS 0 = 1 µs Duty Cycle 1 %
ID
Wave Form
0
10 % td(on) ton tr td(off) toff
10 % tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet G13891EJ1V0DS00
µPA1760
5 TYPICAL CHARACTERISTICS (TA = 25°C)
FORWARD TRANSFER CHARACTERISTICS 100 Pulsed
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 30 VGS=10 V VGS=4.5 V
ID - Drain Current - A
ID - Drain Current - A
10 TA=125°C TA=75°C
25 VGS=4.0 V 20 15 10 5
1 TA=25°C TA=-25°C 0.1 1 VDS = 10 V 2 3 4 5
0 0.0
0.4
0.8
1.2
1.6
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
|yfs| - Forward Transfer Admittance - S
100
VDS=10V Pulsed TA = -25°C TA = 25°C
RDS(on) - Drain to Source On-state Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 Pulsed 90 ID=4 A 80 70 60 50 40 30 20 10 0 0 5 10 15 ID=8 A
10
1
TA =75°C TA =125°C
0.1 0.1
1
10
100
ID- Drain Current - A
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - m
VGS(off) - Gate to Source Cut-off Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 80 60 40 20 VGS=4.5V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3.0 VDS=10 V ID=1 mA
VGS=4.0V
2.0
VGS=10V 1 10 100
0.1
1.0
- 50
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - °C
Data Sheet G13891EJ1V0DS00
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