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Details, datasheet, quote on part number:UPA1763
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| Part: | UPA1763 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | Switching Dual N-channel Power MOSFET Industrial Use |
| Company: | NEC Electronics Inc. |
| Datasheet: | Download UPA1763 datasheet File size : 72 kB |
| Request For quote: | Find where to buy UPA1763
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Datasheet text preview:
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1763
SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The µPA1763 is N-Channel MOS Field Effect Transistor designed for DC/DC Converters.
PACKAGE DRAWING (Unit : mm)
8 5 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 6.0 ±0.3 4.4
+0.10 0.05
FEATURES
· Dual chip type · Low on-resistance RDS(on)1 = 47.0 m MAX. (VGS = 10 V, ID = 2.3 A) RDS(on)2 = 57.0 m MAX. (VGS = 4.5 V, ID = 2.3 A) RDS(on)3 = 66.0 m MAX. (VGS = 4.0 V, ID = 2.3 A) · Low input capacitance Ciss = 870 pF TYP. · Built-in G-S protection diode · Small and surface mount package (Power SOP8)
1.8 MAX.
5 5 5 5
1
4 5.37 MAX.
1.44
0.8
0.15
0.05 MIN.
0.5 ±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 0.05
0.12 M
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
µPA1763G
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note1 Note2 Note2
VDSS VGSS ID(DC) ID(pulse) PT PT IAS EAS Tch Tstg
60 ±20 ±4.5 ±18 1.7 2.0 4.5 60 150 55 to + 150
V V A A W W A mJ °C °C
Gate Protection Diode Source Gate Body Diode
EQUIVALENT CIRCUIT (1/2 Circuit)
Drain
Total Power Dissipation (1 unit) Total Power Dissipation (2 unit) 5 5 Single Avalanche Current Single Avalanche Energy Channel Temperature Storage Temperature
Note3 Note3
5
Notes 1. PW 10 µs, Duty cycle 1 % 2 2. TA = 25 °C, Mounted on ceramic substrate of 1200 mm x 2.2 mm 3. Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0 V Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. W hen this device actually used, an additional protection circuit is externally required if a voltage Exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G14056EJ1V0DS00 (1st edition) Date Published January 2000 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
©
1999, 2000
µPA1763
5 ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) t rr Qrr TEST CONDITIONS VGS = 10 V, ID = 2.3 A VGS = 4.5 V, ID = 2.3 A VGS = 4.0 V, ID = 2.3 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 2.3 A VDS = 60 V, VGS = 0 V VGS = ±16 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 2.3 A VGS(on) = 10 V VDD = 30 V RG = 10 ID = 4.5 A VDD = 48 V VGS = 10 V IF = 4.5 A, VGS = 0 V IF = 4.5 A, VGS = 0 V di/dt = 100 A/µs 870 150 80 11 40 50 12 20 3 5 0.80 30 40 1.5 3.0 MIN. TY P . 37.0 45.0 49.0 2.0 6.0 10 ±10 MAX. 47.0 57.0 66.0 2.5 UNIT m m m V S
µA µA
pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG RG = 10
VGS RL VDD ID
90 % 90 % ID
VGS
Wave Form
0
10 %
VGS(on)
90 %
BVDSS IAS ID VDD VDS
VGS 0 = 1 µs Duty Cycle 1 %
ID
Wave Form
0
10 % td(on) ton tr td(off) toff
10 % tf
Starting Tch
5 TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet G14056EJ1V0DS00
µPA1763
5 TYPICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.)
FORWARD TRANSFER CHARACTERISTICS 100 Pulsed VDS = 10 V 30 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed
ID - Drain Current - A
10
ID - Drain Current - A
TA = 150 °C 1 TA = 75 °C TA = 25 °C 0.1 0.01 TA = -25 °C
25 20 15 10 5 VGS = 4.0 V VGS = 10 V VGS = 4.5 V
0.001
0 - 1.5
1
1.5
2
2.5 3
3.5 4
4.5
5
0 0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
|yfs| - Forward Transfer Admittance - S
100
VDS = 10 V Pulsed TA = -25 °C
RDS(on) - Drain to Source On-state Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 200 Pulsed 180 160 140 120 100 80 60 40 20 0 0 5 ID = 2.3 A 10 15 ID = 4.5 A
10
TA = 25 °C TA = 75 °C
1
TA = 150 °C
0.1 0.1
1
10
100
ID - Drain Current - A
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On - state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cut-off Voltage - V
0.12 0.1 VGS = 4.0 V 0.08 0.06 0.04 0.02 0 0.1
Pulsed
3 2.5 2 1.5 1 0.5 0 - 75 - 50 - 25
VDS =10 V ID = 1 mA
VGS = 4.5 V VGS = 10 V
1
10
ID = 2.3 A 100
0
25
50
75 100 125 150 175
ID - Drain Current - A
Tch - Channel Temperature - °C
Data Sheet G14056EJ1V0DS00
3
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