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Details, datasheet, quote on part number:UPA1764
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| Part: | UPA1764 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | Switching Dual N-channel Power MOSFET Industrial Use |
| Company: | NEC Electronics Inc. |
| Datasheet: | Download UPA1764 datasheet File size : 40 kB |
| Request For quote: | Find where to buy UPA1764
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Datasheet text preview:
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1764
SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The µPA1764 is N-channel MOS Field Effect Transistor designed for high current switching applications.
8
PACKAGE DRAWING (Unit : mm)
5 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 6.0 ±0.3 4.4
+0.10 0.05
FEATURES
· Dual chip type · Low On-state Resistance RDS(on)1 = 27 m (TYP.) (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 32 m (TYP.) (VGS = 4.5 V, ID = 3.5 A) RDS(on)3 = 34 m (TYP.) (VGS = 4.0 V, ID = 3.5 A) · Low input capacitance Ciss = 1300 pF (TYP.) · Built-in G-S protection diode · Small and surface mount package (Power SOP8)
1.8 MAX.
5 5 5 5
1
4 5.37 MAX.
1.44
0.8
0.15
0.05 MIN.
0.5 ±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 0.05
0.12 M
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
µPA1764G
EQUIVALENT CIRCUIT
(1/2 circuit)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note1 Note2 Note2
VDSS VGSS ID(DC) ID(pulse) PT PT Tch T stg
Note3 Note3
60 ±20 ±7 ±28 1.7 2.0 150 55 to +150 7 98
V V A A W W °C °C A mJ
Gate Protection Diode Gate
Drain
Body Diode
Total Power Dissipation (1 unit) Total Power Dissipation (2 unit) Channel Temperature Storage Temperature Single Avalanche Current 5 Single Avalanche Energy
Source
IAS EAS
Notes 1. PW 10 µs, Duty Cycle 1 % 2 5 2. Mounted on ceramic substrate of 2000 mm x 2.2 mm 3. Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0 V Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. W hen this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G14329EJ1V0DS00 (1st edition) Date Published January 2000 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
©
1999,2000
µ PA1764
5 ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 3.5 A VGS = 4.5 V, ID = 3.5 A VGS = 4.0 V, ID = 3.5 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3.5 A VDS = 60 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 3.5 A VGS(on) = 10 V VDD = 30 V RG = 10 ID = 7.0 A VDD = 48 V VGS = 10 V IF = 7.0 A, VGS = 0 V IF = 7.0 A, VGS = 0 V di/dt = 100 A / µs 1300 230 110 15 69 65 27 29 3.6 7.4 0.84 40 66 1.5 5.0 MIN. TY P . 27 32 34 2.0 9.0 10 ±10 MAX. 35 42 46 2.5 UNIT m m m V S
µA µA
pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V BVDSS VDS VGS 0 50 L VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RL PG. RG VDD ID
90 % 90 %
VGS VGS
Wave Form
0
10 %
VGS(on)
90 %
IAS ID VDD
ID ID
Wave Form
0 10 %
10 %
= 1 µs Duty Cycle 1 %
td(on) ton
tr td(off)
toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA 50 RL VDD
PG.
2
Data Sheet G14329EJ1V0DS00
µ PA1764
[MEMO]
Data Sheet G14329EJ1V0DS00
3
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