|
Details, datasheet, quote on part number:UPA1770G
| |
| Part: | UPA1770G |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N/P-Channel Combo |
| Description: | Switching Dual P-channel Power MOSFET Industrial Use |
| Company: | NEC Electronics Inc. |
| Datasheet: | Download UPA1770G datasheet File size : 68 kB |
| Request For quote: | Find where to buy UPA1770G
|
| |
Datasheet text preview:
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1770
SWITCHING DUAL P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The µPA1770 is a P-channel MOS Field Effect Transistor designed for power management applications of portable machines.
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
µPA1770G
FEATURES
· Dual chip type · Low on-resistance RDS(on)1 = 37 m MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 39 m MAX. (VGS = 4.0 V, ID = 3.0 A) RDS(on)3 = 59 m MAX. (VGS = 2.5 V, ID = 3.0 A) · Low input capacitance Ciss = 1300 pF TYP. · Built-in G-S protection diode · Small and surface mount package (Power SOP8)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note1 Note2 Note2 Note3 Note3
VDSS VGSS ID(DC) ID(pulse) PT PT PT PT Tch Tstg
20
V V A A W W W W °C °C
! 12 ! 6.0 ! 24
0.40 0.75 1.7 2.0 150 55 to +150
Total Power Dissipation (1 unit) Total Power Dissipation (2 unit) 5 5 Total Power Dissipation (1 unit) Total Power Dissipation (2 unit) Channel Temperature Storage Temperature
Notes 1. PW 10 µs, Duty Cycle 1 % 2. Mounted on FR4 Board of 1600 mm x 1.6 mm, Drain Pad size : 4.5 mm x 35 µm, TA = 25°C
2 2
5
3. Mounted on ceramic substrate of 1200 mm x 2.2 mm, TA = 25°C
2
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G14055EJ1V0DS00 (1st edition) Date Published November 1999 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
©
1999
µ PA1770
5
ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) t rr Qrr TEST CONDITIONS VGS = 4.5 V, ID = 3.0 A VGS = 4.0 V, ID = 3.0 A VGS = 2.5 V, ID = 3.0 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3.0 A VDS = 20 V, VGS = 0 V VGS = ! 12 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 3.0 A VGS(on) = 4.5 V VDD = 10 V RG = 10 ID = 6.0 A VDD = 16 V VGS = 4.5 V IF = 6.0 A, VGS = 0 V IF = 6.0 A, VGS = 0 V di/dt = 100 A / µs 1300 325 155 25 110 130 140 11 2.0 4.0 0.8 60 40 0.5 5.0 MIN. TY P . 28 29.5 44 1.0 11 1 MAX. 37 39 59 1.5 UNIT m m m V S
µA µA
pF pF pF ns ns ns ns nC nC nC V ns nC
! 10
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL PG. RG RG = 10 VDD
ID 90 % 90 % ID 0 10 % td(on) ton tr td(off) toff 10 % tf VGS
IG = 2 mA
VGS(on) 90 %
VGS Wave Form
RL VDD
0
10 %
PG.
50
VGS 0 = 1µ s Duty Cycle 1 %
ID Wave Form
2
Data Sheet G14055EJ1V0DS00
µ PA1770
5
TYPICAL CHARACTERISTICS(TA = 25 °C, All terminals are connected.)
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(t) - Transient Thermal Resistance - °C/W
100
Rth(ch-A) = 73.5 °C/W
10
1
0.1
0.01 0.001 0.00001
Mounted on ceramic Single Pulse substrate of 1200 mm 2 × 2.2 mm Single Pulse , 1 unit
0.0001
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
RDS(on) - Drain to Source On-state Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 80 70 60 50 40 ID = -3.0 A 30 20 10 0 0 -2 -4 -6 -8 -10 ID = -6.0 A Pulsed
|yfs| - Forward Transfer Admittance - S
100
10
VDS = -10 V Pulsed TA = -50°C TA = -25°C TA = 25°C TA = 75°C TA = 125°C TA = 150°C
1
0 -0.1
-1
-10
-100
ID - Drain Current - A
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - m
VGS(off) - Gate to Source Cut-off Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80 VGS = -2.5 V Pulsed
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -1.5 VDS = -10 V ID = 1 mA
60
-1.0
40
VGS = -4.0 V VGS = -4.5 V
-0.5
20
0 -0.1
-1
-10
-100
-0 -75 -50 -25
0
25
50
75
100 125 150
ID - Drain Current - A
Tch - Channel Temperature - °C
Data Sheet G14055EJ1V0DS00
3
|
|
