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Details, datasheet, quote on part number:UPA1792
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| Part: | UPA1792 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N/P-Channel Combo |
| Description: | Switching n- And P-channel Power MOSFET Industrial Use |
| Company: | NEC Electronics Inc. |
| Datasheet: | Download UPA1792 datasheet File size : 107 kB |
| Request For quote: | Find where to buy UPA1792
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Datasheet text preview:
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1792
SWITCHING N- AND P-CHANNEL POWER MOS FET INDUSTRIAL USE
PACKAGE DRAWING (Unit : mm)
8 5 N-Channel 1 ; Source 1 2 ; Gate 1 7,8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5,6 ; Drain 2
DESCRIPTION
The µPA1792 is N- and P-Channel MOS Field Effect Transistors designed for Motor Drive application of HDD and so on.
FEATURES
· Low on-resistance N-Channel RDS(on)1 = 26 m MAX. (VGS = 10 V, ID = 3.4 A) RDS(on)2 = 36 m MAX. (VGS = 4.5 V, ID = 3.4 A)
1.44 1.8 MAX.
P-Channel
1 5.37 MAX.
4
6.0 ±0.3 4.4
+0.10 0.05
RDS(on)3 = 42 m MAX. (VGS = 4.0 V, ID = 3.4 A) P-Channel RDS(on)1 = 36 m MAX. (VGS = 10 V, ID = 2.9 A) RDS(on)2 = 54 m MAX. (VGS = 4.5 V, ID = 2.9 A) RDS(on)3 = 65 m MAX. (VGS = 4.0 V, ID = 2.9 A) · Low input capacitance N-Channel Ciss = 760 pF TYP. P-Channel Ciss = 900 pF TYP. · Built-in G-S protection diode · Small and surface mount package (Power SOP8)
0.8
0.15
0.05 MIN.
0.5 ±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 0.05
0.12 M
EQUIVALENT CIRCUIT ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
Gate Body Diode Gate Body Diode Drain Drain
µPA1792G
Gate Protection Diode
Source
Gate Protection Diode
Source
N-Channel
P-Channel
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. W hen this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G14557EJ1V0DS00 (1st edition) Date Published July 2000 NS CP(K) Printed in Japan
©
1999, 2000
µPA1792
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
PARAMETER Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1 Note2 Note2
SYMBOL VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
N-CHANNEL 30 ± 20 ± 6.8 ± 27.2 1.7 2.0 150
P-CHANNEL 30
UNIT V V A A W W °C °C
# 20 # 5.8 # 23.2
Total Power Dissipation (1 unit) Total Power Dissipation (2 unit) Channel Temperature Storage Temperature
55 to +150
Notes 1. PW 10 µs, Duty Cycle 1% 2 2. Mounted on ceramic substrate of 2000 mm × 1.6 mm, TA = 25°C
2
Data Sheet G14557EJ1V0DS00
µPA1792
ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.)
N-CHANNEL
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 3.4 A VGS = 4.5 V, ID = 3.4 A VGS = 4.0 V, ID = 3.4 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID =3.4 A VDS = 30 V, VGS = 0 V VGS = ±16 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 3.4 A VGS(on) = 10 V VDD = 15 V RG = 10 ID = 6.8 A VDD = 24 V VGS = 10 V IF = 6.8 A, VGS = 0 V IF = 6.8 A, VGS = 0 V di/dt = 100 A / µs 760 250 95 20 140 50 30 14 2 5 0.86 30 20 1.5 3.0 MIN. TY P . 20.5 27 31 2.1 7.5 10 MAX. 26 36 42 2.5 UNIT m m m V S
µA µA
pF pF pF ns ns ns ns nC nC nC V ns nC
±10
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL PG. RG VDD ID VGS 0 = 1 µs Duty Cycle 1 % ID
Wave Form
VGS VGS
Wave Form
IG = 2 mA VGS(on)
90 %
RL VDD
0
10 %
PG.
90 % 90 %
50
ID
0 10 % 10 %
td(on) ton
tr td(off) toff
tf
Data Sheet G14557EJ1V0DS00
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