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Details, datasheet, quote on part number:UPA1800
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| Part: | UPA1800 |
| Category: | Discrete => Transistors => Bipolar => Switching => NPN |
| Description: | N-channel MOS Field Effect Transistor For Switching |
| Company: | NEC Electronics Inc. |
| Datasheet: | Download UPA1800 datasheet File size : 65 kB |
| Request For quote: | Find where to buy UPA1800
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Datasheet text preview:
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1800
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The µPA1800 is a switching device which can be driven directly by a 4.0-V power source. The µPA1800 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
8
PACKAGE DRAWING (Unit : mm)
5 1, 5, 8 : Drain 2, 3, 6, 7: Source 4 : Gate
1.2 MAX. 1.0±0.05 0.25
5° 3° +3°
FEATURES
· Can be driven by a 4.0-V power source · Low on-state resistance RDS(on)1 = 27 m MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 39 m MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)3 = 45 m MAX. (VGS = 4.0 V, ID = 3.0 A)
1 4
0.1±0.05
0.5
01 0.6 +0..15
0.145 ±0.055
3.15 ±0.15 3.0 ±0.1
6.4 ±0.2 4.4 ±0.1 1.0 ±0.2
ORDERING INFORMATION
PART NUMBER PACKAGE Power TSSOP8
0.65
0 03 0.27 +0..08
µPA1800GR-9JG
0.8 MAX. 0.10 M
0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note1 Note2
EQUIVALENT CIRCUIT
30 ±20 ±5.0 ±20 2.0 150 55 to +150 V V A A W °C °C
Gate Protection Diode Source Gate Drain
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
Body Diode
Total Power Dissipation Channel Temperature Storage Temperature
Notes 1. PW 10 µs, Duty Cycle 1 % 2 2. Mounted on ceramic substrate of 50 cm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. W hen this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D11407EJ1V0DS00 (1st edition) Date Published February 2000 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
©
1999, 2000
µ PA1800
5
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) t rr Qrr TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3.0 A VGS = 10 V, ID = 3.0 A VGS = 4.5 V, ID = 3.0 A VGS = 4.0 V, ID = 3.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 15 V ID = 3.0 A VGS(on) = 10 V RG = 10 VDD = 24 V ID = 5.0 A VGS = 10 V IF = 5.0 A, VGS = 0 V IF = 5.0 A, VGS = 0 V di/dt = 100 A/µs 1.0 3.0 1.41 7.0 20 29 32 680 470 170 18 70 60 26 23 2 7 0.74 60 80 27 39 45 MIN. TY P . MAX. 10 ±10 2.0 UNIT
µA µA
V S m m m pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL PG. RG VDD ID VGS 0 = 1 µs Duty Cycle 1 % ID
Wave Form
VGS VGS
Wave Form
IG = 2 mA VGS(on)
90 %
RL VDD
0
10 %
PG.
90 % 90 %
50
ID
0 10 % 10 %
td(on) ton
tr td(off) toff
tf
2
Data Sheet D11407EJ1V0DS00
µ PA1800
5
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80
ID - Drain Current - A
FORWARD BIAS SAFE OPERATING AREA 100
d ite im 0 V) )L on S( =1 RD VGS (@
ID(pulse) ID(DC)
dT - Derating Factor - %
PW
10 10 0m s
10
=1
ms
ms
60
1
DC
40
0.1
TA = 25°C Single Pulse Mounted on Ceramic 2 Substrate of 50cm x 1.1 mm
20
0
30
60
90
120
150
0.01 0.1
1
10
100
VDS - Drain to Source Voltage - V
TA - Ambient Temperature - °C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 20 Pulsed
TRANSFER CHARACTERISTICS 100 10 VDS = 10 V
ID - Drain Current - A
15
VGS = 4.5 V VGS = 4.0 V
ID - Drain Current - A
1
TA = 125°C
0.1
10 VGS = 2.5 V 5
75°C
0.01
25°C
0.001
-25°C
0
0.0001
0 0.2 0.4 0.6 0.8 1.0
0
0.5
1
1.5
2
2.5
3
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMMITTANCE vs. DRAIN CURRENT 100
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cut-off Voltage - V
2.0
| yfs | - Forward Transfer Admittance - S
VDS = 10 V ID = 1 mA
VDS = 10 V
10
TA = -25°C 25°C
1.5
1
75°C 125°C
1.0
0.1
0.5 -50
0
50
100
150
0.01 0.001
0.01
0.1
1
10
100
Tch - Channel Temperature - °C
ID - Drain Current - A
Data Sheet D11407EJ1V0DS00
3
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