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Details, datasheet, quote on part number:UPA1801
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| Part: | UPA1801 |
| Category: | Discrete => Transistors => Bipolar => Switching => NPN |
| Description: | N-channel MOS Field Effect Transistor For Switching |
| Company: | NEC Electronics Inc. |
| Datasheet: | Download UPA1801 datasheet File size : 71 kB |
| Request For quote: | Find where to buy UPA1801
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Datasheet text preview:
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1801
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The µPA1801 is a switching device which can be driven directly by a 2.5-V power source. The µPA1801 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
8
PACKAGE DRAWING (Unit : mm)
5 1, 5, 8 : Drain 2, 3, 6, 7: Source 4 : Gate
1.2 MAX. 1.0±0.05 0.25
5° 3° +3°
FEATURES
· Can be driven by a 2.5-V power source · Low on-state resistance RDS(on)1 = 24 m MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 25 m MAX. (VGS = 4.0 V, ID = 3.0 A) RDS(on)3 = 34 m MAX. (VGS = 2.5 V, ID = 3.0 A)
1 4
0.1±0.05
0.5
01 0.6 +0..15
0.145 ±0.055
3.15 ±0.15 3.0 ±0.1
6.4 ±0.2 4.4 ±0.1 1.0 ±0.2
ORDERING INFORMATION
PART NUMBER PACKAGE Power TSSOP8
0.65
0 03 0.27 +0..08
µPA1801GR-9JG
0.8 MAX. 0.10 M
0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) ·
Note1 Note2
EQUIVALENT CIRCUIT
20 ±8.0 ±6.0 ±24 2.0 150 55 to +150 V V A A W °C °C
Gate Protection Diode Source Gate Drain
VDSS VGSS ID(DC) ID(pulse) PT Tch T stg
Body Diode
Total Power Dissipation Channel Temperature Storage Temperature
Notes 1. PW 10 µs, Duty Cycle 1 % 2 2. Mounted on ceramic substrate of 5000 mm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. W hen this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D12135EJ1V0DS00 (1st edition) Date Published January 2000 NS CP(K) Printed in Japan
The mark · shows major revised points.
©
1996, 2000
µ PA1801
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VDS = 20 V, VGS = 0 V VGS = ±8.0 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3.0 A VGS = 4.5 V, ID = 3.0 A VGS = 4.0 V, ID = 3.0 A VGS = 2.5 V, ID = 3.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 10 V ID = 3.0 A VGS(on) = 4.0 V RG = 10 VDD = 10 V ID = 6.0 A VGS = 4.0 V IF = 6.0 A, VGS = 0 V IF = 6.0 A, VGS = 0 V di/dt = 100 A/µS 0.5 1.0 0.7 13 16 16.5 21 970 700 320 30 95 90 100 21 2 9 0.75 95 97 24 25 34 MIN. TY P . MAX. 10 ±10 1.5 UNIT
µA µA
V S m m m pF pF pF ns ns ns ns nC nC nC V ns nC
· ·
Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL PG. RG VDD ID VGS 0 = 1 µs Duty Cycle 1 % ID
Wave Form
VGS VGS
Wave Form
IG = 2 mA VGS(on)
90 %
RL VDD
0
10 %
PG.
90 % 90 %
50
ID
0 10 % 10 %
td(on) ton
tr td(off) toff
tf
2
Data Sheet D12135EJ1V0DS00
µ PA1801
·
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80
FORWARD BIAS SAFE OPERATING AREA -100
ID(pulse) ID(DC)
PW
10 ms
dT - Derating Factor - %
ID - Drain Current - A
-10
d ite ) im .0 V )L 4 (on =- DS R GS V (@
=1
ms
60
10 0m s
-1
40
DC
20
-0.1
TA = 25 °C Single Pulse Mounted on Ceramic Substrate of 5000 mm2 x 1.1 mm
0
30 60 120 90 TA - Ambient Temperature - °C
150
-0.01 -0.1
-10 -1 VDS - Drain to Source Voltage - V
-100
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 24 Pulsed 20 VGS = 4.5 V 4.0 V 2.5 V
TRANSFER CHARACTERISTICS 10
VDS = 10 V
ID - Drain Current - A
16 12 8 4
ID - Drain Current - A
1
0.1
TA = 125°C 75°C 25°C -25°C
0.01
0.001
0
0.2
0.4
0.6
0.8
0.0001 0
VDS - Drain to Source Voltage - V
0.5 1 1.5 VGS - Gate to Sorce Voltage - V
2
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cut-off Voltage - V 1.5
| yfs | - Forward Transfer Admittance - S
FORWARD TRANSFER ADMMITTANCE vs. DRAIN CURRENT 100 VDS = 10 V
VDS = 10 V ID = 1 mA
10
1
1
0.5
0.1
TA = -25°C 25°C 75°C 125°C
0 -50
0
50
100
150
0.01 0.001
0.01
0.1
1
10
100
Tch - Channel Temperature - °C
ID - Drain Current - A
Data Sheet D12135EJ1V0DS00
3
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